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2007 Fiscal Year Final Research Report Summary

Active Compensation of the substrate temperature for the growth of high quality II-VI compound films

Research Project

Project/Area Number 16360013
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionWaseda University

Principal Investigator

KOBAYASHI Masakazu  Waseda University, Faculty of Science and Engineering, Professor (10241936)

Co-Investigator(Kenkyū-buntansha) HORIKOSHI Yoshiji  Waseda University, Faculty of Science and Engineering, Professor (60287985)
UTAKA Katsuyuki  Waseda University, Faculty of Science and Engineering, Professor (20277817)
SOUTA Takayuki  Waseda University, Faculty of Science and Engineering, Professor (90171371)
Project Period (FY) 2004 – 2007
KeywordsMoleclaur Beam Epitaxy / Homo-Substrate / UV-sensor / TEM / Superlattice / PL / ZnTe
Research Abstract

Active compensation of the substrate temperature during the MBE growth of wide bandgap II-VI alloy materials were further applied for various complicated structures, namely superlattices, and delta-doping structures.
Different from conventional III-V compound semiconductors such as GaAs, the materials property is significantly affected by the substrate temperature. II-VI wide bandgap compounds were usually grown under lower temperatures than Ga As and related materials, perturbation of the substrate temperature during the growth would cause the deterioration of the film quality of the epitaxial layer. In this research project, heater was introduced to the MBE chamber at the location of source material cells. The substrate temperature perturbation would take place when the cell shutter was opened so that the molecular beam would be introduced toward the substrate since the heat irradiation from the hot cell would take place. The additional heater was to cancel the heat irradiation from the source material cell when those shutters were closed.
High quality ternary compound of ZnMgCdS layers were previously grown using this active compensation technique. This technique was also applied for the growth of superlattice structures, namely ZnMgS/ZnCdS, and ZnSe/MgCdS. Uniform layers structure was confirmed by TEM measurement and narrower X-ray diffraction FWHM were obtained by introducing the active compensation technique. This technique was further introduced for the growth of ZnTe homoepitaxial layer where complicated shutter sequence was introduced to form the delta co-doping structure. The PL properties were improved by using this active compensation technique.
This active compensation of the substrate is a powerful tool to obtain the high quality II-VI epitaxial layers by MBE.

  • Research Products

    (2 results)

All 2007

All Journal Article (2 results) (of which Peer Reviewed: 1 results)

  • [Journal Article] Al and N co-doped ZnTe Layers Grown by MBE2007

    • Author(s)
      A.Ichiba, and M.Kobayashi
    • Journal Title

      Journal of Crystal Growth 301-302

      Pages: 285-288

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Al and N co-doped ZuTe Layers Grown by MBE2007

    • Author(s)
      A. Ichiba, M. Kobayashi
    • Journal Title

      Journal of Crystal Growth 301-302

      Pages: 285-288

    • Description
      「研究成果報告書概要(欧文)」より

URL: 

Published: 2010-02-04  

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