2005 Fiscal Year Final Research Report Summary
Development of new ion implantation technology to semiconductors by using high energy density pulsed ion beam
| Project/Area Number |
16540447
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Plasma science
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| Research Institution | University of Toyama |
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Principal Investigator |
MASUGATA Katsumi Univ.of Toyama, Faculty of Engineering, Professor, 工学部, 教授 (80157198)
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| Co-Investigator(Kenkyū-buntansha) |
TAKAHASHI Takakazu Univ.of Toyama, Faculty of Engineering, Associate Professor, 工学部, 助教授 (80019223)
MURAI Tadakuni Univ.of Toyama, Faculty of Engineering, Professor, 工学部, 教授 (40019196)
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| Project Period (FY) |
2004 – 2005
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| Keywords | Pulsed Ion Beam Implantation / Pulsed Ion Beam / Bipolar Pulse Accelerator / Pulsed Nitrogen Ion Beam / Pulsed Aluminum Ion Beam / Silicon Carbide |
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| Research Abstract |
In this research project the development of the ion beam technology applicable to the pulsed ion beam implantation is the key issue. Based on the our research
1.Development of pulsed nitrogen ion beam
Based on the previously developed technology we have enhanced the intensity of pulsed nitrogen ion beam
2.Development of bipolar pulse accelerator
Bipolar pulse accelerator technology is promising to generate highly pure pulsed beam. To develop the accelerator we have developed a bipolar pulse generator. The designed output of the generator is ([-200 kV、75 ns、7 Ω]+[+200 kV、75 ns、6.5Ω]). The generator works as expected and bipolar pulse was successfully generated. The details of the characteristics of the generator were evaluated experimentally.
3.Development of aluminum ion source
Aluminum ions works as a p-type dopant in SiC semiconductor To develop intense pulsed aluminum ion beam we have developed two types of aluminum ion source, i.e.,pulsed vacuum arc ion source and wire discharge ion source. Both type of ion sources were successfully developed and required ion current density of >50 A/cm^2 was obtained in both types. For vacuum arc ion source the reproducibility was poor and the improvements for wire discharge ion source highly repetitive operation is not easy
4.Evaluation of beam irradiation effects
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Research Products
(27 results)
