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2008 Fiscal Year Final Research Report

Low-energy operation of ultrafast all-optical gate switch for all-optical signal processing

Research Project

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Project/Area Number 17068013
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionNational Institute of Advanced Industrial Science and Technology

Principal Investigator

ISHIKAWA Hiroshi  National Institute of Advanced Industrial Science and Technology, ネットワークフォトニクス研究センター, 研究センター長 (50392585)

Co-Investigator(Kenkyū-buntansha) MOZUME Teruo  産業技術総合研究所, ネットワークフォトニクス研究センター, 主任研究員 (20399497)
NAGASE Masanori  産業技術総合研究所, ネットワークフォトニクス研究センター, 研究員 (80399500)
KAWASHIMA Hitoshi  産業技術総合研究所, 超高速光信号処理デバイス研究ラボ, 主任研究員 (90356840)
SUGIMOTO Yoshimasa  産業技術総合研究所, 超高速光信号処理デバイス研究ラボ, 招聘研究員 (60415784)
IKEDA Noki  産業技術総合研究所, 超高速光信号処理デバイス研究ラボ, 特別研究員 (10415771)
AKIMOTO Ryoichi  産業技術総合研究所, ネットワークフォトニクス研究センター, 主任研究員 (30356349)
GOZU Shin-ichro  産業技術総合研究所, ネットワークフォトニクス研究センター, 特別研究員 (90392729)
HAZAMA Toshifumi  産業技術総合研究所, ネットワークフォトニクス研究センター, 副センター長 (90357765)
KUWATSUKA Haruhiko  産業技術総合研究所, ネットワークフォトニクス研究センター, 研究チーム長 (40417150)
AKITA Kazumichi  産業技術総合研究所, ネットワークフォトニクス研究センター, 特別研究員 (50470050)
GUAN Lim Cheng  産業技術総合研究所, ネットワークフォトニクス研究センター, 特別研究員 (10470048)
OGASAWAR Takeshi  産業技術総合研究所, ネットワークフォトニクス研究センター, 特別研究員 (00392598)
Project Period (FY) 2005 – 2008
Keywords量子井戸 / サブバンド間遷移 / 全光位相変調効果 / MBE / 超高速ゲートスイッチ
Research Abstract

InGaAs/AlAsSb 系の超薄膜量子井戸のサブバンド間遷移を用いた超高速光ゲートスイッチの低エネルギー動作化を目指して、デバイス設計に必要な基礎物性パラメータの評価、高品質結晶の作成技術の研究開発を行い、160Gb/s領域で、2pJの低エネルギーで動作する全光変調位相変調効果を用いたサブバンド間遷移素子の基盤技術を確立した。また、周期構造を集積化することで位相変調効率を上げる構造を提案設計して、その製作技術を確立した。

  • Research Products

    (36 results)

All 2009 2008 2007 2006 Other

All Journal Article (11 results) (of which Peer Reviewed: 11 results) Presentation (23 results) Book (1 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Cross Phase modulation efficiency enhancement in In_<0.8>Ga_<0.2>As/Al_<0.5>Ga_<0.5>As/AlAs_<0.56>Sb_<0.44> coupled double quantum wells by tailoring interband transition wavelength2009

    • Author(s)
      S. Gozu, T. Mozume, R. Akimoto, K. Akita, G. Cong, and H. Ishikawa
    • Journal Title

      Applied Physics Express vol.2

      Pages: 042201(1-3)

    • Peer Reviewed
  • [Journal Article] Molecular beam epitaxy of AlAsSb/AlAs/InGaAs coupled double quantum wells with extremely thin AlAs-center-barrier2009

    • Author(s)
      S. Gozu, T. Mozume, and H. Ishikawa
    • Journal Title

      J. Crystal Growth vol.311

      Pages: 1700-1702

    • Peer Reviewed
  • [Journal Article] Enhancement of all-optical cross phase modulation in InAlAs/AlAsSb coupled quantum ells using InAlAs coupling barrier2009

    • Author(s)
      M. Nagase, R. Akimoto, T. Simoyama, C. Guangwei, T. Mozume, T. Hasama, and H. Ishikawa
    • Journal Title

      IEEE J. Photonics Technol. Lett. vol.20, no.24

      Pages: 2183-2185

    • Peer Reviewed
  • [Journal Article] Indicies of refraction of InGAAs/AlAs/AlAsSb multiple-quantum wells measured by an optical waveguide technique2008

    • Author(s)
      T. Mozume
    • Journal Title

      Physica E vol.40, no.6

      Pages: 2031-2033

    • Peer Reviewed
  • [Journal Article] Optical functions of AlAsSb characterized by spectroscopic ellipsometry2008

    • Author(s)
      T. Mozume, M. Tanaka, A. Yoshimi, and W. Susaki
    • Journal Title

      Phys. Status. Solidi (a) vol.205, no.4

      Pages: 72-875

    • Peer Reviewed
  • [Journal Article] Mechanism of ultrafast modulation of refractive index in photoexcited In_xGa_<1-x>/AlAs_ySb_<1-y> quantum well waveguides2008

    • Author(s)
      G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa
    • Journal Title

      Physical Rev. B vol.78, no.7

      Pages: 075308

    • Peer Reviewed
  • [Journal Article] Ultrafast all-optical refractive index modulation in intersubband transition switch using InGaAs/AlAs/AlAsSb quantum well2007

    • Author(s)
      H. Ishikawa, H. Tsuchida, K. S. Abedin, T. Simoyama, T. Mozume, M. Nagase, R. Akimoto and T. Hasama
    • Journal Title

      Japan J. Appl. Phys. vol.46

      Pages: L157-L160

    • Peer Reviewed
  • [Journal Article] Indices of refraction of AlGaAsSb by an optical waveguide technique2007

    • Author(s)
      T. Mozume, T. Simoyama, and H. Ishikawa
    • Journal Title

      J. Appl. Phys. vol.102, no.11

      Pages: 113111

    • Peer Reviewed
  • [Journal Article] Absorption dynamics in all-optical switch based on intersubband transition in InGaAs-AlAs-AlAsSb coupled quantum wells2007

    • Author(s)
      T. Simoyama, S. Sekiguchi, H. Yoshida, J. Kasai, T. Mozume, and H. Ishikawa
    • Journal Title

      IEEE Photonics Technol. Lett. vol.9, no.8

      Pages: 604-606

    • Peer Reviewed
  • [Journal Article] Strain compensation for InGaAs-AlAs-AlAsSb coupled double quantum wells by controlling the barrier-layer composition2007

    • Author(s)
      M. Nagase, T. Mozume, T. Simoyama, T. Hasama, and H. Ishikawa
    • Journal Title

      J. Crystal Growth vol.301-302

      Pages: 240-243

    • Peer Reviewed
  • [Journal Article] Photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy2007

    • Author(s)
      T. Mozume, , J. Kasai, M. Nagase, T, Simoyama, T. Hasama, H. Ishikawa
    • Journal Title

      J. Crystal Growth vol.301-302

      Pages: 177-180

    • Peer Reviewed
  • [Presentation] 薄いAlAs 層を有するIn0.8Ga0.2As/AlAs/AlAs0.56Sb0.44結合量子井戸のMBE成長 (査読無し)2009

    • Author(s)
      牛頭信一郎, 他
    • Organizer
      第69回応用物理学会秋季学術講講演会
    • Year and Date
      20090900
  • [Presentation] サブバンド・バンド間遷移波長を制御したIn_<0.8>Ga_<0.2>As/AlGaAs/AlAs_<0.56>Sb_<0.44>結合量子井戸 (査読なし)2009

    • Author(s)
      牛頭信一郎, 他
    • Organizer
      第56回応用物理学関係連合講演
    • Year and Date
      2009-03-30
  • [Presentation] Ultrafast all-optical switching using intersubband transitions in InGaAs/AlAs/AlAsSb quantum wells (査読無し)2008

    • Author(s)
      H. Ishikawa
    • Organizer
      Asia-Pacific Optical Communications
    • Place of Presentation
      Hangzhou, China. (invited)
    • Year and Date
      20081000
  • [Presentation] Molecular beam epitaxy of AlAsSb/AlAs/InGaAs coupled quantum wells with extremely thin AlAs-center-barrier (査読あり)2008

    • Author(s)
      S. Gozu et al.
    • Organizer
      Int. Conf. on Molecular Beam Epitaxy
    • Place of Presentation
      Vancouver, Canada
    • Year and Date
      20080800
  • [Presentation] Plasma reflection from highly Si-doped InGaAs/AlAsSb quantum wells (査読あり)2008

    • Author(s)
      S. Gozu, T. Mozume, and H. Ishikawa
    • Organizer
      The Int. Conf. on the Physics of Semiconductors 29
    • Place of Presentation
      Rio de Janeiro
    • Year and Date
      20080700
  • [Presentation] Interband transitions in strained InGaAs/AlAsSb multiple-quantum-well structures (査読あり3)2008

    • Author(s)
      T. Mozume and S. Gozu
    • Organizer
      International Conference on Physics of Semiconductors
    • Place of Presentation
      Rio de Janeiro, Brazil
    • Year and Date
      20080700
  • [Presentation] InGaAs/AlAs/AlAsSb 結合量子井戸サブバンド間遷移を用いた超高速全光スイッチの開発 (査読なし)2008

    • Author(s)
      永瀬成範, 他
    • Organizer
      レーザ・量子エレクトロニクス研究会
    • Year and Date
      20080600
  • [Presentation] Fabrication of all-optical switch based on intersubband transition in InGaAs/AlAsSb quantum wells with DFB structure (査読あり)2008

    • Author(s)
      M. Nagase, R. Akimoto, K. Akita, H. Kawashima, T. Mozume, T. Hasama, and H. Ishikawa
    • Organizer
      Indium Phosphide and Related Materials
    • Place of Presentation
      Versailles France
    • Year and Date
      20080500
  • [Presentation] Room temperature photoreflectance study of InGaAs/AlAsSb quantum wells (査読あり)2008

    • Author(s)
      T. Mozume and S. Gozu
    • Organizer
      International Conference on Indium Phosphide and Related Materials
    • Place of Presentation
      Versailles France
    • Year and Date
      20080500
  • [Presentation] Refractive index study of n-type InGaAs grown on InP substrate (査読あり)2008

    • Author(s)
      S. Gozu T. Mozume and H. Ishikawa
    • Organizer
      International Conference on Indium Phosphide and Related Materials
    • Place of Presentation
      Versailles France
    • Year and Date
      20080500
  • [Presentation] n 型キャリヤ密度依存InGaAs 屈折率変化の解析 (査読なし)2008

    • Author(s)
      牛頭信一郎, 他
    • Organizer
      第55回応用物理学関係連合講演会
    • Year and Date
      20080300
  • [Presentation] InAlAs 結合障壁を用いたInGaAs/AlAsSb結合量子井戸におけるXPM効率改善 (査読なし)2008

    • Author(s)
      永瀬成範, 他
    • Organizer
      第55回応用物理学関係連合講演会
    • Year and Date
      20080300
  • [Presentation] DFB構造を有するInGaAs/AlAsSb量子井戸サブバンド間遷移スイッチの製作 (査読なし)2007

    • Author(s)
      永瀬成範, 他
    • Organizer
      第68回応用物理学会秋季学術講演会
    • Year and Date
      20070900
  • [Presentation] InGaAs屈折率のn型キャリヤ濃度依存性 (査読なし)2007

    • Author(s)
      牛頭信一郎, 他
    • Organizer
      第68回応用物理学会秋季学術講演会
    • Year and Date
      20070900
  • [Presentation] Ultrafast all optical switches using intersubband transitions in quantum well (査読なし)2007

    • Author(s)
      H. Ishikawa
    • Organizer
      3rd Int. Symposium on Ultrafast Photonic Technologies
    • Place of Presentation
      Cambridge USA
    • Year and Date
      20070800
  • [Presentation] Indices of refraction of InGaAs/AlAs/AlAsSb multiple-quantum-wells measured by an optical waveguide technique (査読あり)2007

    • Author(s)
      T. Mozume
    • Organizer
      13th International Conference on Modulated Semiconductor Structures
    • Place of Presentation
      PM10, Genova Italy
    • Year and Date
      20070700
  • [Presentation] InGaAs/AlAs/AlAsSb intersubband transition all-optical switches for ultrafast all-optical signal processing (査読なし)2007

    • Author(s)
      H. Ishikawa
    • Organizer
      OECC/IOOC2007
    • Place of Presentation
      Yokohama, Japan (Invited)
    • Year and Date
      20070700
  • [Presentation] Optical functions of AlAsSb characterized by spectroscopic ellipsometry (査読あり)2007

    • Author(s)
      T. Mozume, M. Tanaka, A. Yoshimi, and W. Susaki
    • Organizer
      4th International Conference on Spectroscopic Ellipsometry, Stockholm
    • Place of Presentation
      Sweden
    • Year and Date
      20070700
  • [Presentation] Improvement of XPM efficiency in InGaAs/AlAsSb coupling barrier for intersubband transition optical switch (査読あり)2007

    • Author(s)
      M. Nagase, et al.
    • Organizer
      Conf. on Optical Communications
    • Place of Presentation
      San Diego, USA
    • Year and Date
      20070200
  • [Presentation] Characteristics of the ultrafast phase modulation in InGaAs/AlAsSb CDQW ISBT switch (査読なし)2007

    • Author(s)
      Lim Chen Guan, 他
    • Organizer
      第68回応用物理学会秋季学術講演会
    • Year and Date
      2007-09-08
  • [Presentation] Intersubband transitions in novel strained coupled quantum wells based on In_<0.53>Ga_<0.47>As grown by molecular beam epitaxy (査読あり)2006

    • Author(s)
      M. Nagase, T. Mozume, T. Simoyama, T. Hasama, and H. Ishikawa
    • Organizer
      International Conference on Indium Phosphide and Related Materials
    • Place of Presentation
      Princeton, NJ, USA
    • Year and Date
      20060500
  • [Presentation] Ultrafast all-optical switches using intersubband transition in quantum wells (査読なし)2006

    • Author(s)
      H. Ishikawa, T. Simoyama, M. Nagase, R. Akimoto, B. Li, K. Akita, and T. Hasama
    • Organizer
      International Conference on Indium Phosphide and Related Materials
    • Place of Presentation
      Princeton, NJ, USA (invited)
    • Year and Date
      20060500
  • [Presentation] InGaAs-based quantum wells for ultrafast all-optical switches using intersubband transitions (査読なし)2006

    • Author(s)
      T. Mozume, M. Nagase, T. Simoyama, and H. Ishikawa
    • Organizer
      JSPS-UNT Joint Symposium on Nanoscale Materials for Optoelectronics and Biotechnology
    • Place of Presentation
      Denton, Texas (invited)
    • Year and Date
      20060200
  • [Book] Ultrafast All-optical Signal Processing Devices, Edited by H. Ishikawa, John Wiley and Sons, (Chapter 5に関連記述)2008

  • [Patent(Industrial Property Rights)] 永瀬成範, 他

    • Inventor(s)
      結合量子井戸構造
    • Industrial Property Number
      特願,2008-529885

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Published: 2010-06-10   Modified: 2021-04-07  

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