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2007 Fiscal Year Final Research Report Summary

Single crystal growth of group III nitride semiconductors by slow cooling of their melts under high pressure

Research Project

Project/Area Number 17360013
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionJapan Atomic Energy Agency

Principal Investigator

UTSUMI Wataru  Japan Atomic Energy Agency, Quantum Beam Science Directorate, Principal Researcher (60193918)

Co-Investigator(Kenkyū-buntansha) SAITOH Hiroyuki  Japan Atomic Energy Agency, 量子ビーム応用研究部門, Senior Post-Doctoral Fellow (20373243)
HATTORI Takanori  Japan Atomic Energy Agency, 量子ビーム応用研究部門, Researcher (10327687)
KANEKO Hiroshi  Japan Atomic Energy Agency, 量子ビーム応用研究部門, Collaborating Engineer (20425565)
Project Period (FY) 2005 – 2007
Keywordsnitride semiconductors / allium nitride / indium nitride / high pressure / high temperature / single crystal
Research Abstract

The aim of this project is to investigate the crystal growth of various group-In nitride semiconductors under high pressure conditions. As the first stage, we built a new high pressure/temperature apparatus with a 1500 ton hydraulic press. Many technical developments have been made: the P-T conditions required for the GaN single crystal growth (>6GPa and>2200℃) was successfully generated and pyrollitic BN was found to be a good container under such severe conditions.
Intensive studies on InN have been made. Its P-T phase diagram was determined up to 20GPa and 2000℃ by in situ diffraction with synchrotron radiation, which showed that wurtzite-rocksalt phase boundary was located around 10 GPa, and InN decomposed into In and N_2 in the wurtzite phase regions. Melting of InN was not observed in the P-T region investigated and thus the possibility of single-crystal growth from the melt that occurred in GaN is ruled out for InN. The decomposition P-T relation experimentally obtained was used to calculate the standard enthalpy of formation of InN at ambient conditions as -36.3 M/mol and to estimate. the decomposition temperature at 1 bar as 204K Experiments on In_2O_3 have also been carried out and we were successful for recovering a single crystal of high pressure phase of In203 that has rhombohedral corundum structure. Furthermore, our high pressure/temperature project has provided an unexpected result related to the bulk metallic glass; formations of bulk metallic glass of elemental Zr sensationally reported by US group was contradicted with our precise experiments.

  • Research Products

    (35 results)

All 2008 2007 2006 2005

All Journal Article (16 results) (of which Peer Reviewed: 6 results) Presentation (17 results) Patent(Industrial Property Rights) (2 results) (of which Overseas: 1 results)

  • [Journal Article] Decomposition of InN at high pressures and temperatures and its thermal instability at ambient conditions2008

    • Author(s)
      H.Saitoh,W.Utsumi, and K.Aoki
    • Journal Title

      J.Cryst.Growth 310

      Pages: 473-476

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Solid-phase grain growth of In_2O_3 at high pressures and temperatures2008

    • Author(s)
      H.Saitoh,W.Utsumi, and K.Aoki
    • Journal Title

      J.Cryst.Growth 310

      Pages: 2295-2297

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Decomposition of InN at high Pressures and temperatures and its thermal instability at ambient conditions2008

    • Author(s)
      H. Saitoh, W. Utsumi, K. Aoki
    • Journal Title

      J. Cryst. Growth 310

      Pages: 473-476

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Solid-phase grain growth of In_2O_3 at high pressures and temperatures2008

    • Author(s)
      H. Saitoh, W. Utsumi, K. Aoki
    • Journal Title

      J. Cryst. Growth 310

      Pages: 2295-2297

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] The phase and crystal-growth study of group-III nitrides in a 2000℃ at 20 GPa region2007

    • Author(s)
      H.Saitoh,W.Utsumi,H.Kaneko, and K.Aoki
    • Journal Title

      J.Cryst.Growth 300

      Pages: 26-31

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] 単元素バルクメタリックガラスは存在するか? 〜高温高圧下におけるZr、Tiの非晶質化の検証〜2007

    • Author(s)
      服部高典、齋藤寛之、青木勝敏、金子洋、岡島由佳、内海渉
    • Journal Title

      日本結晶学会誌 49

      Pages: 179-185

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] The Phase and crystal-growth study of group-III nitrides in a 2000℃at 20 Gpa region2007

    • Author(s)
      H. Saitoh, W. Utsumi, H. Kaneko, K. Aoki
    • Journal Title

      J. Cryst. Growth 300

      Pages: 26-31

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Does Bulk Metallic Glass of Single Element?2007

    • Author(s)
      T. Hattori, H. Saitoh, K. Aoki, H. Kaneko, Y. Okajima, W. Utsumi
    • Journal Title

      Nihon-Kessyo Gakkaishi(in Japanese) 49

      Pages: 179-185

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Does Bulk Metallic Glass of Elemental Zr and Ti Exist?2006

    • Author(s)
      T.Hattori,H.Saitoh,H.Kaneko,Y.Okajima,K.Aoki, and W.Utsumi
    • Journal Title

      Phys.Rev.Lett. 96

      Pages: 255504(1-4)

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Does Bulk Metallic Glass of Elemental Zr and Ti Exist?2006

    • Author(s)
      T. Hattori, H. Saitoh, H. Kaneko, Y. Okajima, K. Aoki, W. Utsumi
    • Journal Title

      Phys. Rev. Lett 96

      Pages: 255504(1-4)

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] 高圧下融液徐冷法によるIII族窒化物半導体単結晶育成2005

    • Author(s)
      内海渉、齋藤寛之、谷口尚、青木勝敏
    • Journal Title

      応用物理 74

      Pages: 593-596

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
  • [Journal Article] Single crystal growth of Gallium Nitride by slow-cooling of its congruent melt under high pressure2005

    • Author(s)
      W.Utsumi,H.Saitoh,H.Kaneko,K.Kiriyama and K.Aoki
    • Journal Title

      Proceedings of Joint 20th AIRAPT-43th EHPRG

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Synthesis of Al_xGa_<1-x>N and InN crystals under high pressures2005

    • Author(s)
      H.Saitoh,W.Utsumi,H.Kaneko, and K.Aoki
    • Journal Title

      Proceedings of Joint 20th AIRAPT-43th EHPRG

    • Description
      「研究成果報告書概要(和文)」より
  • [Journal Article] Single crystal growth of group III nitride semiconductors by slow cooling of their melts under high pressure2005

    • Author(s)
      W. Utsumi, H. Saitoh, T. Taniguchi, K. Aoki
    • Journal Title

      Oyo-Butsuri(in Japanese) 74

      Pages: 593-596

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Single crystal growth of Gallium Nitride by slow-cooling of its congruent melt under high pressure2005

    • Author(s)
      W. Utsumi, H. Saitoh, H. Kaneko, K. Kiriyama, K, Aoki
    • Journal Title

      Proceedings of Joing 20th AIRAPT-43th EHPRG

    • Description
      「研究成果報告書概要(欧文)」より
  • [Journal Article] Synthesis of al_xGa_1-xN and inN crystals under high pressures2005

    • Author(s)
      H. Saitoh, W. Utsumi, H. Kaneko, K. Aoki
    • Journal Title

      Proceedings of Joint 20th AIRAPT-43th EHPRG

    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Solid-phase grain growth of In_2O_3 at high pressure and temperature2007

    • Author(s)
      H.Saitoh,W.Utsumi, and K.Aoki
    • Organizer
      The 15th-International Conference on Crystal Growth
    • Place of Presentation
      Saltlake-city/USA
    • Year and Date
      2007-08-13
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Solid-phase grain growth of In_2O_3 at high Pressure and temperature2007

    • Author(s)
      H. Saitoh, W. Utsumi, K. Aoki
    • Organizer
      The 15th - International Conference on Crystal Growth
    • Place of Presentation
      Saltlake- city/USA
    • Year and Date
      2007-08-13
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] 高温高圧下でのIII族窒化物の結晶成長と相安定性2006

    • Author(s)
      齋藤寛之、内海渉、青木勝敏
    • Organizer
      次世代窒化物討論会
    • Place of Presentation
      茨城県つくば市
    • Year and Date
      2006-12-07
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Crystal growth and phase stability of group III nitrides under high pressure and high temperature2006

    • Author(s)
      H. Saitoh, W. Utsumi, K.Aoki
    • Organizer
      Jisedai Tikkabutsu Toronkai
    • Place of Presentation
      Tsukuba
    • Year and Date
      2006-12-07
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] InNの分解曲線と熱力学的安定性2006

    • Author(s)
      齋藤寛之、内海渉、金子洋、青木勝敏
    • Organizer
      第47回高圧討論会
    • Place of Presentation
      熊本市
    • Year and Date
      2006-11-09
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Zr、Tiの非晶質化問題のその後2006

    • Author(s)
      服部高典、齋藤寛之、金子洋、岡島由佳、青木勝敏、内海渉
    • Organizer
      第47回高圧討論会
    • Place of Presentation
      熊本市
    • Year and Date
      2006-11-09
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Decomposition curve of InN and its thermo dynamical stability2006

    • Author(s)
      H. Saitoh, W. Utsumi, H. Kaneko, K. Aoki
    • Organizer
      47th Koatsu Toronkai
    • Place of Presentation
      Kumamoto
    • Year and Date
      2006-11-09
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Suspicious amorphous formation in Zr and Ti and the Truth2006

    • Author(s)
      T. Hattori, H. Saitoh, H. Kaneko, Y. Okajima, K. Aoki, W. Utsumi
    • Organizer
      47th Koatsu Toronkai
    • Place of Presentation
      Kumamoto
    • Year and Date
      2006-11-09
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Crystal growth of group-III nitride using hydraulic high pressure press2006

    • Author(s)
      H.Saitoh,W.Utsumi,H.Kaneko, and K.Aoki
    • Organizer
      First International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Linkoeping/Sweden
    • Year and Date
      2006-06-04
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] 窒化ガリウム単結晶の高温高圧合成2005

    • Author(s)
      齋藤寛之、服部高典、金子洋、内海渉、青木勝敏
    • Organizer
      第46回高圧討論会
    • Place of Presentation
      北海道室蘭市
    • Year and Date
      2005-10-29
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] ZrおよびTiの高温高圧下での構造変化 -アモルファス相は存在するか?-2005

    • Author(s)
      内海渉、齋藤寛之、服部高典、金子洋、岡島由佳、青木勝敏
    • Organizer
      第46回高圧討論会
    • Place of Presentation
      北海道室蘭市
    • Year and Date
      2005-10-29
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Single crystal growth of GaN under high pressure2005

    • Author(s)
      H. Saitoh, T. Hattori, H. Kaneko, W. Utsumi, K. Aoki
    • Organizer
      46th Koatsu Toronkai
    • Place of Presentation
      Hokkaido
    • Year and Date
      2005-10-29
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Structural variation of Zr and Ti at high pressures/temperatures2005

    • Author(s)
      W. Utsumi, H. Saitoh, T. Hattori, H. Kaneko, Y. Okajima, K. aoki
    • Organizer
      46th Koatsu Toronkai
    • Place of Presentation
      Hokkaido
    • Year and Date
      2005-10-29
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Single crystal growth of Gallium Nitride by slow-cooling of its congruent melt under high pressure2005

    • Author(s)
      W.Utsumi,H.Saitoh,H.Kaneko,K.Kiriyama and K.Aoki
    • Organizer
      Joint 20th AIRAPT-43th EHPRG
    • Place of Presentation
      Karlsruhe/Germany
    • Year and Date
      2005-06-28
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Synthesis of Al_xGa_<1-x>N and InN crystals under high pressures2005

    • Author(s)
      H.Saitoh,W.Utsumi,H.Kaneko, and K.Aoki
    • Organizer
      Joint 20th AIRAPT-43th EHPRG
    • Place of Presentation
      Karlsruhe/Germany
    • Year and Date
      2005-06-28
    • Description
      「研究成果報告書概要(和文)」より
  • [Presentation] Single crystal growth of Gallium Nitride by slow-cooling of its congruent melt under high pressure2005

    • Author(s)
      W. Utsumi, H. Saitoh, H. Kaneko, K. Kiriyama, K. Aoki
    • Organizer
      Joint 20th AIRAPT- 43th EHPRG
    • Place of Presentation
      Karlsruhe/Germany
    • Year and Date
      2005-06-28
    • Description
      「研究成果報告書概要(欧文)」より
  • [Presentation] Synthesis of Al_xGa_1-xN and inN crystals under high pressures2005

    • Author(s)
      H. Saitoh, W. Utsumi, H. Kaneko, K. Aoki
    • Organizer
      Joint 20th AIRAPT- 43th EHPRG
    • Place of Presentation
      Karlsruhe/Germany
    • Year and Date
      2005-06-28
    • Description
      「研究成果報告書概要(欧文)」より
  • [Patent(Industrial Property Rights)] 単結晶窒化ガリウムの製造方法2007

    • Inventor(s)
      内海渉、齋藤寛之、青木勝敏
    • Industrial Property Rights Holder
      内海渉、齋藤寛之、青木勝敏
    • Industrial Property Number
      特許第3936996号
    • Filing Date
      2007-04-06
    • Description
      「研究成果報告書概要(和文)」より
  • [Patent(Industrial Property Rights)] Process for producing single-crystal Gallium Nitride2007

    • Inventor(s)
      W.Utsumi,H.Saitho,K.Aoki
    • Industrial Property Rights Holder
      W.Utsumi,H.Saitho,K.Aoki
    • Industrial Property Number
      United States Patent,Patent No.7294198 B2
    • Filing Date
      2007-11-13
    • Description
      「研究成果報告書概要(和文)」より
    • Overseas

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Published: 2010-02-04  

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