超高効率化合物半導体量子細線発光ダイオードの開発

Products Report

• Project/Area Number: 17360170
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: WANG Xuelun National Institute of Advanced Industrial Science and Technology, Nanotechnology Research Institute, Senior Scientist (80356609)
• Co-Investigator(Kenkyū-buntansha): OGURA Mutsuo Nanotechnology Research Institute, ナノテクノロジー研究部門, Senior Scientist (90356717) ; NAGAMUNE Yasushi Nanotechnology Research Institute, ナノテクノロジー研究部門, Senior Scientist (20218027)
• Project Period (FY): 2005 – 2007

Research Products

• [Patent(Industrial Property Rights)] Ⅲ-Ⅴ族化合物半導体発光ダイオード (2012)
  • Inventor(s): 王 学論
  • Industrial Property Rights Holder: 独立行政法人産業技術総合研究所
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 第4998701号
  • Acquisition Date: 2012-05-25
• [Patent(Industrial Property Rights)] Ⅲ-Ⅴ族化合物半導体発光ダイオード (2011)
  • Inventor(s): 王 学論
  • Industrial Property Rights Holder: 独立行政法人産業技術総合研究所
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 第7982205号
  • Acquisition Date: 2011-07-19
  • Overseas
• [Patent(Industrial Property Rights)] SEMICONDUCTOR LIGHTEMITTING DIODE (2011)
  • Inventor(s): 王 学論
  • Industrial Property Rights Holder: 独立行政法人産業技術総合研究所
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 13/146179
  • Filing Date: 2011-08-25
  • Acquisition Date: 2014-02-25
  • Overseas
• [Patent(Industrial Property Rights)] 半導体発光ダイオード (2011)
  • Inventor(s): 王 学論
  • Industrial Property Rights Holder: 独立行政法人産業技術総合研究所
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 特願2011-500562
  • Filing Date: 2011-05-16
  • Acquisition Date: 2013-09-06
• [Patent(Industrial Property Rights)] 半導体発光ダイオード (2010)
  • Inventor(s): 王 学論, 小倉 睦郎
  • Industrial Property Rights Holder: 独立行政法人産業技術総合研究所
  • Industrial Property Rights Type: 特許PCT/JP2010/051813, 特許13/146179
  • Industrial Property Number: PCT/JP2010/051813, 特許13/146179
  • Filing Date: 2010-02-08, 2011-07-25
  • Overseas
• [Patent(Industrial Property Rights)] 半導体発光ダイオード (2009)
  • Inventor(s): 王 学論, 小倉 睦郎
  • Industrial Property Rights Holder: 独立行政法人産業技術総合研究所
  • Industrial Property Rights Type: 特許権特願2009-140684
  • Industrial Property Number: 特願2009-140684
  • Filing Date: 2009-06-12