2006 Fiscal Year Final Research Report Summary
Development of a VLSI-read-out system of crystal calorimeter for space experiment
| Project/Area Number |
17540239
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (C)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Particle/Nuclear/Cosmic ray/Astro physics
|
|---|
| Research Institution | Yokohama National University |
|---|
Principal Investigator |
KATAYOSE Yusaku Yokohama National University, Faculty of Engineering, Research associate, 大学院・工学研究院, 助手 (90323930)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
SHIBATA Makio Yokohama National University, Faculty of Engineering, Professor, 大学院・工学研究院, 教授 (50018016)
TORII Shoji Waseda University, Professor, 理工学総合研究センター, 教授 (90167536)
|
|---|
| Project Period (FY) |
2005 – 2006
|
| Keywords | cosmic ray / read-out system with VLSI / crystal scintillator / photodiode |
|---|
| Research Abstract |
A multiple range read-out system was developed with the low consumption electric power in which a multi-photo diode and a VLSI chip were used by this research. [Development of read-out system] A read-out system using multi-photo diode and a front-end circuit including analog ASIC, 16 bit ADC and FPGA was developed to measure the energy deposit with the dynamic range from 1MIP (Minimum Ionization Particle) up to 10^6MIPs in a BGO crystal scintillator. The output signal of 1 MIP was calibrated by cosmic ray muon. The ADC count of light yield of BGO by cosmic ray muons was 10.8fC approximately. The dynamic range of the read-out system was tested with both LED pulser and heavy ions beam in the range from 1MIP to about 2400 MIPs. [Development of VA32_HDR14.2] VA32_HDR14.2 which has positive polarity of the input signal was developed newly to optimize it in the read-out circuit of the photo diode. We adapted 0.35μm-technology, and a radiation resistance and noise performance are improved drastically with this chip. [Radiation-hardness test] The beam test to investigate radiation-hardness of the VLSI chip was done. Helium beam was irradiated in VA32HDR14 (0.8μm-process) and VA32HDR14.2 (0.35μm-process), and a noise level by total-dose effect as well as a change in gain were measured by the test pulse. In spite of hard radiation of 1.6Mrad in case of VA32_HD14 and 74 kRad in case of VA32HDR14.2, there was no serious damage found in both chips.
|
Research Products
(4 results)
