Development of narrow-pitch TlBr gamma-ray detectors for SPECT

2019 Fiscal Year Final Research Report

• Project/Area Number: 17H05076
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: Medical Physics and Radiological Technology
• Research Institution: Tohoku Institute of Technology
• Principal Investigator: Onodera Toshiyuki 東北工業大学, 工学部, 准教授 (10620916)
• Project Period (FY): 2017-04-01 – 2020-03-31
• Keywords: TlBr / 化合物半導体 / ガンマ線検出器

Outline of Final Research Achievements

In this study, gamma-ray detector fabrication techniques have been developed for realizing a high resolution single photon emission tomography (SPECT) using a thallium bromide (TlBr) semiconductor crystal.
Photolithography techniques has been studied using negative, positive and liftoff type resist and electrode formation process using liftoff type resist was most promising for fine pitch electrode formation on TlBr crystals. TlBr crystals were grown inside substrates made from aluminum oxide and quartz. 3 mm diameters and 1 mm diameters for fifth single TlBr crystals were successfully grown in the substrates.

Free Research Field

ガンマ線検出器

Academic Significance and Societal Importance of the Research Achievements

ＳＰＥＣＴに搭載されるガンマ線センサーとしてＴｌＢｒ半導体は、他の半導体を大きく凌ぐ優れた特長を持っているため、実現できれば従来の診断機器よりも高解像度化や低被曝化などの恩恵が期待出来るが、未だに実用化は果たしていない。本研究は、ＴｌＢｒ検出器のＳＰＥＣＴへの実用化を加速させるため装置開発に有益な新たな技術を従来の常識にとらわれることなく多角的な方面から検討を進めた。得られた知見が今後の研究開発に活かされることにより、多くの国民が享受できる先進医療の促進が期待できる。