2018 Fiscal Year Annual Research Report
次世代超高効率デバイス用ホウ素系窒化物半導体のMOVPE成長
Project/Area Number |
17J05229
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Research Institution | Nagoya University |
Principal Investigator |
楊 旭 名古屋大学, 工学研究科, 特別研究員(DC2)
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Project Period (FY) |
2017-04-26 – 2019-03-31
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Keywords | boron nitride / AlN / MOVPE |
Outline of Annual Research Achievements |
1.Direct growth of hexagonal BN (h-BN) on AlN/sapphire template and AlN substrate by metalorganic vapor phase epitaxy without using any buffer layer was first demonstrated. By fine tuning the growth parameters, particularly, single-crystalline multilayer h-BN with highly ordered lattice was successfully formed. 2.By study on the evolution of the wrinkled feature in h-BN grown on sapphire, AlN/sapphire and AlN substrates, the origin of the surface wrinkling in h-BN is elucidated. It is found that the formation of wrinkled surface is due to 2D plus 3D growth mode during film growth rather than the common belief that it is from post growth cooling process.
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Research Progress Status |
平成30年度が最終年度であるため、記入しない。
|
Strategy for Future Research Activity |
平成30年度が最終年度であるため、記入しない。
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Research Products
(1 results)