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2008 Fiscal Year Final Research Report

Growth of new semiconducting silicides and their applications to energy devices

Research Project

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Project/Area Number 18560303
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionShizuoka University

Principal Investigator

TATSUOKA Hirokazu  Shizuoka University, 工学部, 教授 (40197380)

Project Period (FY) 2006 – 2008
Keywordsシリサイド / 熱電発電素子 / 熱光起電力システム / エピタキシー / 溶融塩法 / 相互拡散 / エネルギー / 環境
Research Abstract

本研究はシリサイド系半導体の総合的な研究であり、結晶成長、物性評価からデバイス応用への応用まで広い範囲をカバーしていている。資源豊富で安全である材料を用い、太陽電池や熱光電池,熱電発電素子など環境保全に寄与するデバイスの開発を行った。得られた結果を総合的にまとめ、ファミリーとしてみたシリサイド半導体の光電デバイス、熱電デバイスへの可能性について纏めた。この研究テーマの最終的目標である資源豊富で安全な材料による半導体発電素子の開発が、将来のエネルギーフローを変える事を期待する。

  • Research Products

    (46 results)

All 2009 2008 2007 2006 Other

All Journal Article (13 results) Presentation (27 results) Remarks (2 results) Patent(Industrial Property Rights) (4 results)

  • [Journal Article] Growth of manganese silicide layers on Si substrates using MnCl_2 source2009

    • Author(s)
      Hu Junhua, T. Kurokawa, T. Suemasu, S. Takahara, M. Itakura and H. Tatsuoka
    • Journal Title

      physica status solidi(a) 206(2)

      Pages: 233-237

  • [Journal Article] Growth of Ca-Germanide and Ca-Silicide Crystals2009

    • Author(s)
      Y. Warashina, Y. Ito, T. Nakamura, H. Tatsuoka, J. Snyder, M. Tanaka, T. Suemasu, Y. Anma, M. Shimomura, Y. Hayakawa
    • Journal Title

      e-J. Surf. Sci. Nanotech 7

      Pages: 129-133

  • [Journal Article] Full-Potential Screened KKR Calculations for Magnetism of Co2MnSi, Ni2MnAl and Ru2MnSi2008

    • Author(s)
      M. Asato, M.Ohkubo, T. Hoshino, F. Nakamura, N. Fujima and H. Tatsuoka
    • Journal Title

      Based on the Generalized Gradient Approximation, Mater. Trans 49

      Pages: 1760-1767

  • [Journal Article] Structural Property of b-FeSi2 Layers Deposited on FeSi from a Molten Salt2007

    • Author(s)
      T. Ohishi, A. Mishina, I. Yamauchi, T. Matsuyama and H. Tatsuoka
    • Journal Title

      Thin Solid Films 515(2)

      Pages: 8201-8204

  • [Journal Article] Preparation and Electrical Properties of Ca5Si3 and Sr5Si3 Powders2007

    • Author(s)
      T. Inaba, A. Kato, K. Miura, M. Akasaka, T. Iida, Y. Momose and H. Tatsuoka
    • Journal Title

      Thin Solid Films 515(2)

      Pages: 8226-8229

  • [Journal Article] Preparation of β-FeSi2 Substrates by Molten Salt Method2007

    • Author(s)
      M. Okubo, T. Ohishi, A. Mishina, Yamauchi, H. Udono, T. Suemasu, T. Matsuyama and H. Tatsuoka
    • Journal Title

      Thin Solid Films 515(2)

      Pages: 8268-8271

  • [Journal Article] Tatsuoka,Growth ofSiOx Nanofibers Using FeSi Substrates with Ga Droplets2006

    • Author(s)
      T. Inaba, Y. Saito, H. Kominami, Y. akanishi, K. Murakami, T. Matsuyama and H. Tatsuoka
    • Journal Title

      Jpn.J.Appl.Phys 45(49)

      Pages: 1320-1321

  • [Journal Article] Resistive contrast in R-EBIC from thin films2006

    • Author(s)
      K. Durose and H. Tatsuoka
    • Journal Title

      Microscopy of Semiconducting Materials(Springer Proceedings in Physics) 107

      Pages: 515-518

  • [Journal Article] Growth Evolution of Sr-Silicide Layers on Si(111)and Mg2Si/Si(111)Substrates2006

    • Author(s)
      K. Miura, T. Ohishi, T. Inaba, Y. Mizuyoshi, N. Takagi, T. Matsuyama, Y. Momose, T. Koyama, Y. Hayakawa and H. Tatsuoka
    • Journal Title

      Thin Solid Films 508

      Pages: 74-77

  • [Journal Article] Tatsuoka, Growth of Mg2Si1-xGex Layers on Silicon-Germanium Substrates2006

    • Author(s)
      Y. Mizuyoshi, R. Yamada, T. Ohishi, Y. Y. Hayakawa, T. Koyama, T. Matsuyama and H. Tatsuoka
    • Journal Title

      Thin Solid Films 508

      Pages: 70-73

  • [Journal Article] 分科会・研究会だよりシリサイド系半導体と関連物質研究会2006

    • Author(s)
      立岡浩一、末益崇
    • Journal Title

      応用物理 75(5)

      Pages: 615

  • [Journal Article] APAC-SILICIDE2006会議報告ーシリサイド半導体に関するアジア太平洋会議報告ー2006

    • Author(s)
      立岡浩一、会議速報
    • Journal Title

      電子材料 75(11)

      Pages: 91-91

  • [Journal Article] シリサイド半導体に関するアジア太平洋国際会議2006

    • Author(s)
      立岡浩一、寺井慶和、ナノインフォ
    • Journal Title

      Japan Nanonet Bulletin 65(5)

      Pages: 3-4

  • [Presentation] Growth of MnSi1.7 Layers on Si Substrates in MnCl2 Vapor2009

    • Author(s)
      T. Kurokawa, T. Matsuyama and H. Tatsuoka
    • Organizer
      Asia-Pacific Conference on Semiconducting Silicides
    • Place of Presentation
      Kyoto
    • Year and Date
      20090729-31
  • [Presentation] Structural and Thermoelectric Properties of Mg2Si0.6Ge0.4 Processed by Spark Plasma Sintering Method2009

    • Author(s)
      Y. Mizuyoshi, M. Akasaka, T. Iida, T. Matsuyama and H. Tatsuoka
    • Organizer
      Asia-Pacific Conference on Semiconducting Silicides
    • Place of Presentation
      Kyoto
    • Year and Date
      20090729-31
  • [Presentation] Growth and Structural Properties of β-FeSi2 layers on Glass Substrates2009

    • Author(s)
      T. Satake, K. Yamaguchi, H. Yamamoto, T. Matsuyama and H. Tatsuoka
    • Organizer
      Asia-Pacific Conference on Semiconducting Silicides
    • Place of Presentation
      Kyoto
    • Year and Date
      20090729-31
  • [Presentation] Structural Property of β-FeSi2 Layers Deposited on FeSi from a Molten Salt2009

    • Author(s)
      T.Ohishi, M.Okubo, A.Mishina, I.Yamauchi, T.Matsuyama and H.Tatsuoka
    • Organizer
      Asia-Pacific Conference on Semiconducting Silicides
    • Place of Presentation
      Kyoto
    • Year and Date
      20090729-31
  • [Presentation] Growth Evolution of Iron Silicide Layers on Si Substrates Using FeCl2 Source2009

    • Author(s)
      M. Nishiura, Y. Momose, T. Matsuyama and H. Tatsuoka
    • Organizer
      Asia-Pacific Conference on Semiconducting Silicides
    • Place of Presentation
      Kyoto
    • Year and Date
      20090729-31
  • [Presentation] Preparation of β-FeSi2 Substrates by Molten Salt Method2009

    • Author(s)
      M. Okubo, T. Ohishi, A. Mishina, I. Yamauchi, H. Udono, T. Suemasu, T. Matsuyama and H. Tatsuoka
    • Organizer
      Asia-Pacific Conference on Semiconducting Silicides
    • Place of Presentation
      Kyoto
    • Year and Date
      20090729-31
  • [Presentation] Preparation and electrical property of Ca5Si3 and Sr5Si3 powders2009

    • Author(s)
      T. Inaba,A. Kato, K. Miura, Y. Momose and H. Tatsuoka
    • Organizer
      Asia-Pacific Conference on Semiconducting Silicides
    • Place of Presentation
      Kyoto
    • Year and Date
      20090729-31
  • [Presentation] Mg2Si粉末より作製したCaシリサイドの熱電特性温2009

    • Author(s)
      翠蓮, 藁科芳史, 立岡浩一
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-04-22
  • [Presentation] Si基板上へのNa-Si系化合物の生成2009

    • Author(s)
      伊藤佳史, 藁科芳史, 立岡浩一
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-04-02
  • [Presentation] Syntheses And Thermoelectric Properties Of Ca-Germanide And Ca-Silicide Powders By Mechanical Alloying2008

    • Author(s)
      Y. Warashina, Y. Ito, J. Snyder, K. Isobe, T. Suemasu, Y. Hayakawa, T. Nakamura, H. Tatsuoka
    • Organizer
      The IUMRS International Conference in Asia 2008
    • Place of Presentation
      Nagoya
    • Year and Date
      2008-12-10
  • [Presentation] Growth of Ca-Germanide and Ca-Silicide Crystals by Mechanical Alloying2008

    • Author(s)
      Y. Warashina, Y. Ito, T. Nakamura, H. Tatsuoka, J. Snyder, M. Tanaka, T. Suemasu, Y. Anma, M. Shimomura, Y. Hayakawa
    • Organizer
      International Symposium on Surface Science and Nanotechnology
    • Place of Presentation
      Tokyo
    • Year and Date
      2008-11-10
  • [Presentation] 熱反応堆積法によるシリサイド系半導体材料の成長2008

    • Author(s)
      立岡浩一
    • Organizer
      第69回応用物理学会学術講演会、結晶工学分科会・シリサイド系半導体と関連物質研究会共同企画「シリサイド系材料が開く新しい応用技術-結晶工学から斬るシリサイド系材料の可能性-」
    • Place of Presentation
      中部大学
    • Year and Date
      2008-09-04
  • [Presentation] Semiconducting Silicides2008

    • Author(s)
      立岡浩一
    • Organizer
      第11回シリサイド系半導体夏の学校ナイトセッション「夢を語ってみる、シリサイド半導体デバイスと21世紀」
    • Place of Presentation
      倉敷市
    • Year and Date
      2008-08-02
  • [Presentation] メカニカルアロイング(MA)法によるCa系シリサイド、Ca系ジャーマナイドの生成及び電気特性評価2008

    • Author(s)
      伊藤佳史, 藁科芳史, 立岡浩一
    • Organizer
      第11回シリサイド系半導体夏の学校
    • Place of Presentation
      倉敷市
    • Year and Date
      2008-08-02
  • [Presentation] Mg_2Si粉末を用いた単相Ca2Si粉末の作製と評価2008

    • Author(s)
      藁科芳史, 小林敬祥, 百瀬与志美, 立岡浩一
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学理工学部
    • Year and Date
      2008-03-29
  • [Presentation] MnCl_2ソースを用いて成長したマンガンシリサイド薄膜の構造2008

    • Author(s)
      Junhua Hu, 黒川貴規, 高原省吾, 板倉賢, 末益崇, 立岡浩一
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学理工学部
    • Year and Date
      2008-03-29
  • [Presentation] M2Si(M=Mg, Ca, Sr)結晶の成長と光学特性2008

    • Author(s)
      Junhua Hu, 加藤彰彦, 佐道泰造, 前田佳均, K.N. Galkin, T.V. Turchin, N.G. Galkin, 立岡浩一
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学理工学部
    • Year and Date
      2008-03-29
  • [Presentation] Growth and Thermoelectric Property of New Semiconducting Silicide Ca_2Si2007

    • Author(s)
      Y. Warashina, T. Kobayashi, H. Tatsuoka, T. Hayashi, Y. Horio
    • Organizer
      国際ナノ熱電シンポジウム
    • Place of Presentation
      Senri
    • Year and Date
      20070611-12
  • [Presentation] MnSi1.7及びM2Si(M=Mg, Ca, Sr)薄膜の成長2007

    • Author(s)
      立岡浩一
    • Organizer
      第10回シリサイド系半導体夏の学校
    • Place of Presentation
      掛川市
    • Year and Date
      2007-07-29
  • [Presentation] M2Si1-xGex(M=Mg, Ca)粉末の作製2007

    • Author(s)
      齋藤洋祐, 百瀬与志美, 小山忠信, 早川康弘, 立岡浩一
    • Organizer
      第54回応用物理学関係連合講演会
    • Place of Presentation
      青山学院大学
    • Year and Date
      2007-03-29
  • [Presentation] Novel Growth Techniques for a Variety of Semiconducting Silicides(invited)2007

    • Author(s)
      H. Tatsuoka
    • Organizer
      The 3rd International Symposium on Nanovision Science and The 9th Joint International Conference on Advanced Science and Technology
    • Place of Presentation
      Shizuoka Univ
    • Year and Date
      2007-01-24
  • [Presentation] Growth Temperature dependence of structural properties on Iron Silicide Layers Grown Using FeCl2 Source2006

    • Author(s)
      M. Nishiura, Y. Momose, T. Matsuyama and H. Tatsuoka
    • Organizer
      2006 International Workshop on Sustainable Energy and Materials
    • Place of Presentation
      Meiji University
    • Year and Date
      2006-09-05
  • [Presentation] TEM Observations of b-FeSi_2 Layers Grown on Glass Substrates2006

    • Author(s)
      T. Satake, K. Yamaguchi, H. Yamamoto, T. Matsuyama, and H. Tatsuoka
    • Organizer
      2006 International Workshop on Sustainable Energy and Materials
    • Place of Presentation
      Meiji University
    • Year and Date
      2006-09-05
  • [Presentation] Growth Time Dependence of Layer Morphology on MnSi1.7 Layers Grown in MnCl2 Vapor2006

    • Author(s)
      T. Kurokawa, T. Matsuyama and H. Tatsuoka
    • Organizer
      2006 International Workshop on Sustainable Energy and Materials
    • Place of Presentation
      Meiji University
    • Year and Date
      2006-09-05
  • [Presentation] Growth of Nanofibers using β-FeSi2, β-FeSi2/Si and Mg2Si Substrates with Ga Droplets2006

    • Author(s)
      K. Shiozawa, S. Honda, K. Ogino, Y. Saito, and H. Tatsuoka
    • Organizer
      2006 International Workshop on Sustainable Energy and Materials
    • Place of Presentation
      Meiji University
    • Year and Date
      2006-09-05
  • [Presentation] Novel Growth Techniques for a Variety of Group II Metal Silicides (Invited)2006

    • Author(s)
      K. Miura, T. Inaba, Y. Mizuyoshi, N. Takagi Y. Momose and H. Tatsuoka
    • Organizer
      2006 International Workshop on Sustainable Energy and Materials-Invited
    • Place of Presentation
      Meiji University
    • Year and Date
      2006-09-05
  • [Presentation] イントロダクトリートーク : シリサイド半導体研究10年のトピックス2006

    • Author(s)
      立岡浩一
    • Organizer
      第67回応用物理学会学術講演会、シリサイド系半導体と関連物質研究会合同企画シンポジウム「シリサイド半導体研究10年の進捗」
    • Place of Presentation
      立命館大学
    • Year and Date
      2006-08-30
  • [Remarks] NASA News Releases, NASA Finds New Type of Comet Dust Mineral, June 12, 2008 (彗星のちりから新種の鉱物発見について)

  • [Remarks] 中日新聞、静岡新聞(2008.8.23) ひらめき☆ときめき☆サイエンス 静岡大工学部、電子工学研究所

  • [Patent(Industrial Property Rights)] β-FeSi2の製造方法2009

    • Inventor(s)
      立岡浩一他
    • Acquisition Date
      2009-01-09
  • [Patent(Industrial Property Rights)] ナノワイヤ部材およびその製造方法2006

    • Inventor(s)
      立岡浩一、斉藤祥朗
    • Industrial Property Number
      2008007376
    • Filing Date
      2006-06-23
  • [Patent(Industrial Property Rights)] マグネシウムシリサイドの合成方法および熱電素子モジュールの製造方法2006

    • Inventor(s)
      立岡浩一他
    • Acquisition Date
      2006-02-24
  • [Patent(Industrial Property Rights)] マグネシウムシリサイドの合成方法2006

    • Inventor(s)
      立岡浩一他
    • Acquisition Date
      2006-11-24

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Published: 2010-06-10   Modified: 2016-04-21  

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