2021 Fiscal Year Final Research Report
Basic research on nanostructure control for the fabrication of ultra-wide bandgap oxide quantum devices by mist CVD
| Project/Area Number |
18H01873
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Review Section |
Basic Section 29020:Thin film/surface and interfacial physical properties-related
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| Research Institution | Kochi University of Technology |
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Principal Investigator |
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| Project Period (FY) |
2018-04-01 – 2022-03-31
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| Keywords | ミストCVD / 気液混相流 / 反応メカニズム / 酸化ガリウム / 酸化亜鉛 / 高電子移動度トランジスタ(HEMT) / ショットキーバリアダイオード(SBD) |
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| Outline of Final Research Achievements |
For the purpose of establishing a global safe and secure life and adapting to an information-oriented society with ultra-high speed and ultra-large capacity while ensuring global environmental protection, I aimed to fabricate α-Al2(1-x)Ga2xO3 based deep ultraviolet LED and high mobility transistors by mist CVD. A technique for manipulating the composition and characteristics of various functional thin films have been built and a technique for controlling the surface roughness of Ga2O3 based functional thin films and the advantages of using mist CVD in synthesizing them have been found. Also, a Schottky barrier diode (SBD) and a high electron mobility transistor (HEMT) have been fabricated and a Si:AlGaOx thin film device with a bandgap of 6.22 eV, which is equivalent to AlN, have been succeeded in demonstration. On the other hand, due to budgetary problems and countermeasures against new infectious diseases, some research cannot be carried out and it is regrettable.
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| Free Research Field |
化学工学・応用物理
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| Academic Significance and Societal Importance of the Research Achievements |
気液混相(ミスト)流を利用する事で、(ア)独立な操作変数数の拡張による操作変数選択自由度の向上と、(イ)反応場雰囲気制御範囲の拡張が可能となり、極めて高度に反応を制御できる可能性がある事を示すことに成功した。つまり、ミストCVDは未来デバイスを合成するための強力な技術であることを示せた。
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