Polytype Controlled SiC Single Crystal Grwoth

2020 Fiscal Year Final Research Report

• Project/Area Number: 18H01891
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Review Section: Basic Section 30010:Crystal engineering-related
• Research Institution: Kyushu University
• Principal Investigator: NISHIZAWA Shin-ichi 九州大学, 応用力学研究所, 教授 (40267414)
• Co-Investigator(Kenkyū-buntansha): 柿本 浩一 九州大学, 応用力学研究所, 教授 (90291509)
• Project Period (FY): 2018-04-01 – 2021-03-31
• Keywords: 炭化ケイ素 / 結晶成長 / 不純物

Outline of Final Research Achievements

In this study, effects of nitrogen and aluminum dopant on the SiC crystal structure and poly-type stability were investigated by DFT. With taking account of the stacking energy of additional bilayer, the carbon terminated surface as seed surface with nitrogen doped condition is the only condition of 4H single poly-type SiC growth. Under the other conditions, poly-type conversion and inclusion might be occurred.

Free Research Field

結晶成長

Academic Significance and Societal Importance of the Research Achievements

SiCの普及にたいして最大のボトルネックになっているSiC単結晶基板に関して，初めて理論的に多形制御物理を明らかにした。この成果は，4H-SiCを絶対安定に成長させるための最適結晶成長条件確立につながり，ポストシリコン時代の省エネルギーパワー半導体材料として期待されているSiCの本格的実用化を支えることである。