Searching new operation area for QCL by Gain Mapping using NEGF

2020 Fiscal Year Final Research Report

• Project/Area Number: 18K04251
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: Institute of Physical and Chemical Research
• Principal Investigator: Yun Joosun 国立研究開発法人理化学研究所, 開拓研究本部, 基礎科学特別研究員 (30817359)
• Co-Investigator(Kenkyū-buntansha): 平山 秀樹 国立研究開発法人理化学研究所, 開拓研究本部, 主任研究員 (70270593)
• Project Period (FY): 2018-04-01 – 2021-03-31
• Keywords: QCL / AlGaN / NEGF / Alloy disorder / Radom field

Outline of Final Research Achievements

1. Dipole scattering self-energy for GaN/AlGaN superlattices were modeled, and it was utilized to investigate carrier transport based on the NEGF. By this study, it was confirmed that compositional Al ratios between 0.3 and 0.7 can highly influence the level broadening.
2. Generation of random electric field due to the roughness induced charge at the interfaces of GaN/AlGaN multiple quantum well (MQW) is reported. By this study, it is revealed that even for the 0.1 Al compositional ratio of GaN/AlGaN MQW can generate RMS random electric field over 1 MV/cm for the case of bad interface quality.

Free Research Field

Optoelectronics

Academic Significance and Societal Importance of the Research Achievements

We step forward to clarify the carrier transport in AlGaN-based superlattices through this project's analytical and numerical calculations. Continuous research stemming from this project will help realize the unexplored frequency's terahertz laser device and high-efficiency deep-UV emitter.