Investigation of nano-scale conductance properties of few layer graphene films

2009 Fiscal Year Final Research Report

• Project/Area Number: 19310085
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Nanomaterials/Nanobioscience
• Research Institution: NTT Basic Research Laboratories
• Principal Investigator: NAGASE Masao NTT Basic Research Laboratories, 量子電子物性研究部, 主任研究員 (20393762)
• Co-Investigator(Kenkyū-buntansha): HIBINO Hiroki 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 主幹研究員 (60393740) ; SEKINE Yoshiaki 日本電信電話株式会社NTT物性科学基礎研究所, 量子電子物性研究部, 社員 (70393783) ; KAGASHIMA Hiroyuki 日本電信電話株式会社NTT物性科学基礎研究所, 量子電子物性研究部, 主任研究員 (70374072) ; YAMAGUCHI Hiroshi 日本電信電話株式会社NTT物性科学基礎研究所, 量子電子物性研究部, 部長 (60374071) ; OKAMOTO Hajime 日本電信電話株式会社NTT物性科学基礎研究所, 量子電子物性研究部, 社員 (20350465)
• Project Period (FY): 2007 – 2009
• Keywords: ナノ材料 / マイクロ・ナノデバイス / 計測工学 / グラフェン

Research Abstract

A main purpose of this study is an investigation of nano-scale conductance properties of few layer graphene films on SiC substrate. A precise control of layer numbers of graphene has been realized using low-energy electron microscopy. The local conductances of few layer graphene were measured using an integrated nanogap probe which was newly developed for this study. The measured results revealed a confinement effect in graphene nano-islands and a conductance modification near atomic step in continual graphene sheets. A lot of useful knowledge for future graphene electronics has been obtained.

Research Products

• [Journal Article] Epitaxial few-layer graphene: toward single crystal growth (2010)
  • Author(s): H. Hibino, H. Kageshima, M. Nagase
  • Journal Title: J. Phys. D (in press)
  • Peer Reviewed
• [Journal Article] Contact Conductance Measurement of Locally Suspended Graphene on SiC (2010)
  • Author(s): M. Nagase, H. Hibino, H. Kageshima H. Yamaguchi
  • Journal Title: Appl. Phys. Express 3 Pages: 045101
  • Peer Reviewed
• [Journal Article] 炭素材料グラフェン(寄稿記事) (2010)
  • Author(s): 永瀬雅夫
  • Journal Title: 工業材料 58 Pages: 44-45
• [Journal Article] Epitaxial Graphene Growth Studied by Low-energy Electron Microscopy and First-principles (2010)
  • Author(s): H. Kageshima, H. Hibino, M. Nagase, H. Yamaguchi
  • Journal Title: Materials Science Forum Pages: 597-602, 645-648
  • Peer Reviewed
• [Journal Article] Local Conductance Measurement of Double-layer Graphene on SiC Substrate (2009)
  • Author(s): M. Nagase, H. Hibino, H. Kageshima H. Yamaguchi
  • Journal Title: Nanotechnology 20 Pages: 445704
  • Peer Reviewed
• [Journal Article] Stacking domains of epitaxial few-layer graphene on SiC(0001) (2009)
  • Author(s): H. Hibino, S. Mizuno, H. Kageshima, M. Nagase, H. Yamaguchi
  • Journal Title: Phys. Rev. B 80 Pages: 085406
  • Peer Reviewed
• [Journal Article] Direct Actuation of GaAs Membrane with the Microprobe of Scanning Probe Microscopy (2009)
  • Author(s): K. TAMARU, K. NONAKA, M. NAGASE, H. YAMAGUCHI, S. WARISAWA, S. ISHIHARA
  • Journal Title: Jpn. J. Appl. Phys. 48 Pages: 06FG06
  • Peer Reviewed
• [Journal Article] Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces (2009)
  • Author(s): H. Kageshima, H. Hibino, M. Nagase, H. Yamaguchi
  • Journal Title: Appl. Phys. Express 2 Pages: 065502
  • Peer Reviewed
• [Journal Article] グラフェンのエレクトロニクスへの展開 (2009)
  • Author(s): 永瀬雅夫
  • Journal Title: 未来材料 9 Pages: 38-45
• [Journal Article] グラフェンのミクロスコピックな物性の解明(寄稿記事) (2009)
  • Author(s): 永瀬雅夫
  • Journal Title: セラミックス 44 Pages: 181-182
• [Journal Article] Number-of-layers dependence of electronic properties of epitaxial few-layer graphene investigated by photoelectron emission microscopy (2009)
  • Author(s): H. Hibino, H. Kageshima, M. Kotsugi, F. Maeda, F.-Z. Guo, Y. Watanabe
  • Journal Title: Phys. Rev. B 79 Pages: 125437
  • Peer Reviewed
• [Journal Article] In-plane conductance measurement of graphene nanoislands using an integrated nanogap probe (2008)
  • Author(s): M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
  • Journal Title: Nanotechnology 19 Pages: 495701
  • Peer Reviewed
• [Journal Article] Thickness Determination of Graphene Layers Formed on SiC Using Low-Energy Electron Microscopy (2008)
  • Author(s): H. Hibino, H. Kageshima, F. Maeda, M. Nagase, Y. Kobayashi, H. Yamaguchi
  • Journal Title: e-J. Surf. Sci. Nanotech. 6 Pages: 107-110
  • Peer Reviewed
• [Journal Article] Height Dependence of Young's Modulus for Carbon Nano-pillars Grown by Focused-Ion-Beam-Induced Chemical Vapor Deposition (2008)
  • Author(s): K. Nonaka, K. Tamaru, M. Nagase, H. Yamaguchi, S. Warisawa, S. Ishihara
  • Journal Title: Jpn. J. Appl. Phys. 47 Pages: 5116-5119
  • Peer Reviewed
• [Journal Article] Local conductance measurement of few-layer graphene on SiC substrate using an integrated nanogap probe (2008)
  • Author(s): M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
  • Journal Title: J. Phys: Conf. Series 100 Pages: 052006
  • Peer Reviewed
• [Journal Article] Metrology of microscopic properties of graphene on SiC
  • Author(s): M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
  • Journal Title: 信学技報 SDM2009-56 Pages: 47-52
• [Presentation] SiC上エピタキシャルグラフェンの原子構造と電子状態"(招待講演) (2010)
  • Author(s): 影島博之
  • Organizer: 日本物理学会2010年春季第65回年次大会
  • Place of Presentation: 岡山大学/岡山市
  • Year and Date: 2010-03-22
• [Presentation] SiC上に成長したエピタキシャルグラフェンの構造と電子特性の表面電子顕微鏡による解析"(招待講演) (2010)
  • Author(s): 日比野浩樹
  • Organizer: 日本物理学会2010年春季第65回年次大会
  • Place of Presentation: 岡山大学/岡山市
  • Year and Date: 2010-03-21
• [Presentation] SiC上グラフェントランジスタの電気特性評価 (2010)
  • Author(s): 田邉真一, 関根佳明, 永瀬雅夫, 日比野浩樹
  • Organizer: 2010年春季第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学/平塚市
  • Year and Date: 2010-03-19
• [Presentation] siC(0001)面上に形成されるグラフェン島の理論検討 (2010)
  • Author(s): 影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司
  • Organizer: 2010年春季第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学/平塚市
  • Year and Date: 2010-03-18
• [Presentation] 炭化反応が駆動する少数層グラフェン上のSiナノ粒子の移動 (2010)
  • Author(s): 日比野浩樹, 影島博之, 永瀬雅夫, 山口浩司
  • Organizer: 2010年春季第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学/平塚市
  • Year and Date: 2010-03-18
• [Presentation] SiC上数層グラフェンの断面TEM観察 (2010)
  • Author(s): 永瀬雅夫, 日比野浩樹, 影島博之, 山口浩司
  • Organizer: 2010年春季第57回応用物理学関係連合講演会
  • Place of Presentation: 東海大学/平塚市
  • Year and Date: 2010-03-18
• [Presentation] グラフェン開発の現状と極限材料応用の可能性について(招待講演) (2010)
  • Author(s): 永瀬雅夫
  • Organizer: 平成21年度第2回理工学研究所講演会(日本大学
  • Place of Presentation: 日本大学理工学部駿河台校舎, 東京都
  • Year and Date: 2010-03-01
• [Presentation] 炭素新材料グラフェン(招待講演) (2010)
  • Author(s): 永瀬雅夫
  • Organizer: 第5回表面技術会議「環境対応の先端ナノ構造」
  • Place of Presentation: 東京ビックサイト, 東京都
  • Year and Date: 2010-02-18
• [Presentation] SiC(0001)上グラフェン成長のエナージェティクス(招待講演) (2010)
  • Author(s): 影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司
  • Organizer: 第2回九州大学応用力学研究所グラフェン研究会「エピタキシャルグラフェンの形成と物性」
  • Place of Presentation: 神戸国際会議場/神戸
  • Year and Date: 2010-01-29
• [Presentation] sic単結晶基板上のエピタキシャルグラフェン形成と基礎物性-デバイス展開を目指して-(招待講演) (2009)
  • Author(s): 影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司
  • Organizer: 第18回SiC及び関連ワイドギャップ半導体研究会
  • Place of Presentation: 神戸国際会議場/神戸
  • Year and Date: 2009-12-18
• [Presentation] Microscopic characterization of few-layer graphene on SiC using an integrated nanogap probe (2009)
  • Author(s): M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
  • Organizer: 17th Int. Colloquium on Scanning Probe Microscopy (ICSPM17
  • Place of Presentation: Atagawa-Height /Higashi-izu/Japan(Invited)
  • Year and Date: 2009-12-12
• [Presentation] Microscopic Evaluations of Structure and Electronic Properties of Epitaxial Graphene (2009)
  • Author(s): H. Hibino, H. Kageshima, M. Nagase
  • Organizer: 7th Int. Symp. Atomic Level Characterizations for New Materials and Devices (ALC'09)
  • Place of Presentation: The Westin Maui Resort & Spa/Maui/Hawaii/ USA(Invited)
  • Year and Date: 2009-12-09
• [Presentation] Microscopic characterization of few-layer graphene on SiC (2009)
  • Author(s): M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
  • Organizer: Int. Symp. Advanced Nanodevices and Nanotechnology (ISANN2009)
  • Place of Presentation: Sheraton Maui Resort and Spa, Kaanapali/Hawaii/USA(Invited)
  • Year and Date: 2009-12-03
• [Presentation] グラフェンの基礎物性とその理論-デバイス応用の観点から- (2009)
  • Author(s): 影島博之
  • Organizer: 早稲田大学大学院先進理工学研究科第82回QMSセミナー
  • Place of Presentation: 早稲田大学/新宿区(招待講演)
  • Year and Date: 2009-11-20
• [Presentation] Structure and Electronic Properties of Epitaxial Graphene grown on SiC Studied by Surface Electron Microscopy (2009)
  • Author(s): H. Hibino, H. Kageshima, M. Nagase
  • Organizer: 22nd Int. Microproesses and Nanotechnology Conf. (MNC2009)
  • Place of Presentation: Sheraton Sapporo Hotel/Sapporo/Japan(Invited)
  • Year and Date: 2009-11-18
• [Presentation] sic上グラフェン島の理論検討 (2009)
  • Author(s): 影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司
  • Organizer: 東京大学物性研究所短期研究会
  • Place of Presentation: 東大物性研/柏市
  • Year and Date: 2009-10-24
• [Presentation] Study of Epitaxial Graphene Growth using LEEM and First-principles (2009)
  • Author(s): H. Kageshima, H. Hibino, M. Nagase
  • Organizer: 13th Int. Conf. on Silicon Carbide and Related Materials, (ICSCRM2009)
  • Place of Presentation: Nurnberg/ Germany(Invited)
  • Year and Date: 2009-10-12
• [Presentation] Surface electron microscopy studies of structure and electronic properties of epitaxial few-layer graphene grown on SiC (2009)
  • Author(s): H. Hibino
  • Organizer: 2009 RIEC Cooperative Research Project on "Control and Elucidation of Growth Mechanism of Graphene for device applications in the next generation"
  • Place of Presentation: RIEC/Tohoku Univ. /Sendai/ Japan
  • Year and Date: 2009-10-06
• [Presentation] First-principles study on energetics of C aggregation on SiC surfaces for understanding epitaxial graphene growth mechanism (2009)
  • Author(s): H. Kageshima
  • Organizer: 2009 RIEC Cooperative Research Project on "Control and Elucidation of Growth Mechanism of Graphene for device applications in the next generation"
  • Place of Presentation: RIEC/Tohoku Univ. /Sendai/Japan
  • Year and Date: 2009-10-06
• [Presentation] Microscopic conductance measurement of few-layer graphene on SiC (2009)
  • Author(s): M. Nagase
  • Organizer: 2009 RIEC Cooperative Research Project on "Control and Elucidation of Growth Mechanism of Graphene for device applications in the next generation"
  • Place of Presentation: RIEC/Tohoku Univ. /Sendai/Japan
  • Year and Date: 2009-10-06
• [Presentation] SiC上グラフェンへの導電性プローブのコンタクト特性(2) (2009)
  • Author(s): 永瀬雅夫, 日比野浩樹, 影島博之, 山口浩司
  • Organizer: 2009年秋季・第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学/富山市
  • Year and Date: 2009-09-09
• [Presentation] SiC(0001)面上グラフェン形成の第一原理計算-吸着原子・原子空孔の影響- (2009)
  • Author(s): 影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司
  • Organizer: 2009年秋季・第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学/富山市
  • Year and Date: 2009-09-08
• [Presentation] エピタキシャルグラフェン/SiC界面構造のX線CTR散乱による解析 (2009)
  • Author(s): 日比野浩樹, 前田文彦, 影島博之, 永瀬雅夫, 広沢一郎, 渡辺義夫
  • Organizer: 2009年秋季・第70回応用物理学会学術講演会
  • Place of Presentation: 富山大学/富山市
  • Year and Date: 2009-09-08
• [Presentation] "エピタキシャル・グラフェンの走査プローブ顕微鏡による物性評価"(招待講演) (2009)
  • Author(s): 永瀬雅夫
  • Organizer: 有機バイオSPM研究会2009「先端材料をプローブ顕微鏡で観る・測る」
  • Place of Presentation: 幕張メッセ国際展示場/千葉市
  • Year and Date: 2009-09-04
• [Presentation] Metrology of microscopic properties of graphene on SiC (2009)
  • Author(s): M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
  • Organizer: 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2009)
  • Place of Presentation: Haeundae Grand Hotel/Busan/ Korea(Invited)
  • Year and Date: 2009-06-24
• [Presentation] グラフェンの現状と宇宙エレベータテザーとしての可能性について"(招待講演) (2009)
  • Author(s): 永瀬雅夫
  • Organizer: (社)宇宙エレベータ協会第3回ワークショップ
  • Place of Presentation: 日本大学理工学部駿河台キャンパス/東京都
  • Year and Date: 2009-05-24
• [Presentation] SiC上グラフェンの物性評価(招待講演) (2009)
  • Author(s): 永瀬雅夫
  • Organizer: 有機デバイス研究会第77会研究会「グラフェンの最新技術動向と展望」
  • Place of Presentation: 静岡大学浜松キャンパス/浜松市
  • Year and Date: 2009-04-24
• [Presentation] SiC上グラフェンへの導電性プローブのコンタクト特性 (2009)
  • Author(s): 永瀬雅夫, 日比野浩樹, 影島博之, 山口浩司
  • Organizer: 2009年(平成21年)春季第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学/つくば市
  • Year and Date: 2009-04-01
• [Presentation] SiC(0001)面上エピタキシャルグラフェン形成に関する第一原理計算 (2009)
  • Author(s): 影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司
  • Organizer: 2009年(平成21年)春季第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学/つくば市
  • Year and Date: 2009-03-31
• [Presentation] SiC上に成長したエピタキシャルグラフェンの積層ドメイン構造 (2009)
  • Author(s): 日比野浩樹, 水野清義, 影島博之, 永瀬雅夫, 山口浩司
  • Organizer: 2009年(平成21年)春季第56回応用物理学関係連合講演会
  • Place of Presentation: 筑波大学/つくば市
  • Year and Date: 2009-03-31
• [Presentation] Novel microscopies for graphene on SiC (2009)
  • Author(s): M. Nagase, H. Hibino, H. Kageshima H. Yamaguchi
  • Organizer: 2009 RCIQE Int. Seminar on "Advanced Semiconductor Materials and Devices"
  • Place of Presentation: Hokkaido Univ. /Sapporo/ Japan(Invited)
  • Year and Date: 2009-03-02
• [Presentation] Local Conductance of Deformed Graphene Near Atomic Steps on SiC (2009)
  • Author(s): M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
  • Organizer: Int. Symp. Nanoscale Transport and Technol. (ISNTT2009)
  • Place of Presentation: NTT Atsugi R&D Center/Atsugi/Japan
  • Year and Date: 2009-01-23
• [Presentation] SiC上のグラフェン-走査プローブ顕微鏡による評価技術-(招待講演) (2009)
  • Author(s): 永瀬雅夫
  • Organizer: 学振ナノプローブテクノロジー第167委員会第53回研究会
  • Place of Presentation: キャンパスプラザ京都/京都市
  • Year and Date: 2009-01-08
• [Presentation] Local conductane measurement of deformed double-layer graphene on atomic step-structures of SiC substrate (2008)
  • Author(s): M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
  • Organizer: 13th Advanced Heterostructures and Nanostructures Workshop (AHNW2008)
  • Place of Presentation: Hapuna Beach Prince Hotel/Big Island of Hawaii/USA
  • Year and Date: 2008-12-10
• [Presentation] Local conductance measurement of thermally grown graphene on SiC substrate (2008)
  • Author(s): M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
  • Organizer: Int. Symp. on Graphene Devices 2008 (ISGD2008)
  • Place of Presentation: Univ. of Aizu/ Aizuwakamatsu/ Japan
  • Year and Date: 2008-11-18
• [Presentation] Theoretical study on epitaxial graphene formation on SiC(0001) surface (2008)
  • Author(s): H. Kageshima, H. Hibino, M. Nagase, H. Yamaguchi
  • Organizer: Int. Symp. on Graphene Devices 2008 (ISGD2008)
  • Place of Presentation: Univ. of Aizu/Aizuwakamatsu/ Japan
  • Year and Date: 2008-11-17
• [Presentation] Evaluation of the number of graphene layers grown on SiC: SPM and RAMAN spectroscopy studies (2008)
  • Author(s): H. Hibino, M. Nagase, C. Jackson, H. Kageshima, Y. Kobayashi, H. Yamaguchi
  • Organizer: Int. Symp. on Graphene Devices 2008 (ISGD2008)
  • Place of Presentation: Univ. of Aizu/Aizuwakamatsu/ Japan
  • Year and Date: 2008-11-17
• [Presentation] In-plane conductane images of few-layer graphene on SiC substrate (2008)
  • Author(s): M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
  • Organizer: IEEE Nanotechnology Materials and Devices 2008 (NMDC2008)
  • Place of Presentation: Kyoto Univ. /Kyoto/Japan
  • Year and Date: 2008-10-21
• [Presentation] 二層グラフェン導電率へのSiC基板表面ステップ構造の影響 (2008)
  • Author(s): 永瀬雅夫, 日比野浩樹, 影島博之, 山口浩司
  • Organizer: 2008年(平成20年)秋季第69回応用物理学会学術講演会
  • Place of Presentation: 中部大学/春日井市
  • Year and Date: 2008-09-03
• [Presentation] Local Conductance of Graphene Near Buried Atomic Steps on SiC Substrate (2008)
  • Author(s): M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
  • Organizer: Int. Conf. Nanoscience and Technol. 2008 (ICN+T2008)
  • Place of Presentation: Keystone/CO/USA
  • Year and Date: 2008-07-22
• [Presentation] iC上のグラフェン成長と電気特性(招待講演) (2008)
  • Author(s): 永瀬雅夫, 日比野浩樹, 影島博之, 山口浩司
  • Organizer: 第55回応用物理学関係連合講演会
  • Place of Presentation: 日本大学理工学部船橋キャンパス
  • Year and Date: 2008-03-28
• [Book] グラフェンの機能と応用展望、一部(第11章SiC上のグラフェン成長と電気特性)の執筆を分担 (2009)
  • Author(s): 永瀬雅夫, 他、監修:斉木幸一朗、徳本洋志
  • Total Pages: 147-158
  • Publisher: シーエムシー出版
• [Remarks]
  • URL: http://www.brl.ntt.co.jp/people/nagase/
• [Remarks] 日刊工業新聞、グラフェントランジスタ次世代素子実用化競う、[コメント掲載]、2009.12.7
• [Remarks] 日本経済新聞、高機能の新炭素材料「グラフェン」、[コメント掲載]、2009.9.7
• [Remarks] GAKKEN MOOK決定版ロケットと宇宙開発(2009.7) p.134、学研、グラフェンの画像(資料提供)
• [Remarks] 日本経済新聞、サイエンス:宇宙旅行、エレベータで、[コメント掲載]、2009.7.12
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  • Inventor(s): 田邉真一、日比野浩樹、永瀬雅夫、関根佳明
  • Industrial Property Rights Holder: 日本電信電話株式会社
  • Industrial Property Number: 特願201037004
  • Filing Date: 2010-02-23
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  • Inventor(s): 永瀬雅夫、日比野浩樹、影島博之、山口浩司
  • Industrial Property Rights Holder: 日本電信電話株式会社
  • Industrial Property Number: 特願2008226923
  • Filing Date: 2008-09-04