2009 Fiscal Year Final Research Report
Development of new method of crystal growth using dynamic electromagnetic force
| Project/Area Number |
19360012
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Kyushu University |
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Principal Investigator |
KAKIMOTO Koichi Kyushu University, 応用力学研究所, 教授 (90291509)
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| Co-Investigator(Kenkyū-buntansha) |
KANGAWA Yoshihiro 九州大学, 応用力学研究所, 准教授 (90327320)
LIU Lijun 九州大学, 応用力学研究所, 研究員 (00380535)
KANGAWA Yoshihiro 九州大学, 応用力学研究所, 技術職員 (80423557)
UDA Satoshi 東北大学, 金属材料研究所, 教授 (90361170)
HUANG Xinming 東北大学, 金属材料研究所, 准教授 (80375104)
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| Project Period (FY) |
2007 – 2009
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| Keywords | 電磁場 / 結晶成長 / Si / SiC |
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| Research Abstract |
We developed new methods of crystal growth of silicon and SiC by using external electro-magnetic fields. The study focused on the crystal growth methods of liquid phase epitaxy and sublimation method. We clarified how gas pressure in a furnace during crystal growth in a furnace for sublimation growth affects growth velocity of SiC. Furthermore, we studied the effects on frequency on flow of the solution in liquid phase epitaxy method.
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