2009 Fiscal Year Final Research Report
Electric-pulse-induced resistance switching in manganite films grown by metalorganic chemical vapor deposition with in situ spectroscopic diagnostics
| Project/Area Number |
19360144
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyoto University |
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Principal Investigator |
NAKAMURA Toshihiro Kyoto University, 大学院・工学研究科, 講師 (90293886)
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| Project Period (FY) |
2007 – 2009
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| Keywords | 不揮発性メモリー / ReRAM / ペロブスカイト型酸化物 / マンガン酸化物 / MOCVD / その場プロセス診断 / 抵抗スイッチング / 交流インピーダンス法 |
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| Research Abstract |
Recently, a large resistance change by the application of an electric pulse was observed at room temperature in metal oxides such as Pr_<1-x>Ca_xMnO_3 (PCMO). This effect provides a possibility of a next-generation nonvolatile memory, called resistance random access memory (ReRAM). In this work, the composition control based on the in situ spectroscopic monitoring was developed to improve the reproducibility of the resistance switching in the deposited PCMO films. The frequency response of complex impedance of the PCMO-based devices was measured to study the resistance switching mechanism. The electric-pulse-induced change of the impedance spectra suggested that the resistance switching in the PCMO-based devices was due to the resistance change in both the grain bulk and the interface between the film and the electrode.
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[Remarks] シーズ提供中村敏浩,多元系酸化物薄膜の作製と抵抗スイッチング特性, (財)京都高度技術研究所第9期技術経営人材養成講座, 2009年10月～2010年2月
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[Remarks] 依頼展示中村敏浩,橘邦英, PCMO薄膜の作製と抵抗スイッチング特性, VACUUM2008第30回真空展, 2008年9月10日～12日,東京ビッグサイト
