2011 Fiscal Year Final Research Report
Explanation of reaction layer fatigue in silicon microstructure for development of highly-reliable MEMS devices
| Project/Area Number |
19676002
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| Research Category |
Grant-in-Aid for Young Scientists (S)
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| Allocation Type | Single-year Grants |
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| Research Field |
Materials/Mechanics of materials
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| Research Institution | Kyoto University |
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Principal Investigator |
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| Research Collaborator |
TSUYOSHI Ikehara (独)産業技術総合研究所, 主任研究員 (10344102)
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| Project Period (FY) |
2007 – 2011
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| Keywords | シリコン / MEMS / 引張試験 / 疲労試験 / 酸化 / 信頼性 |
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| Research Abstract |
To design the reliability of practical MEMS devices, the models of fracture and fatigue life of silicon micro structure have been established. For fracture, it is revealed that the vertical stress against(111) plane expresses the strength and the relationship to strength and surface morphology is clarified. For fatigue life, the prediction model based on Paris' law and Weibull distribution has been examined on various fatigue life tests and the good correlation was observed. The effect of humidity on the fatigue exponent was also shown. The new dynamic stress measurement system for Si micro resonator using micro Raman spectroscopy has been developed.
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Research Products
(8 results)
