Observation of dynamic behavior of antiferroelectric NaNbO3-based film using in-situ technique

2021 Fiscal Year Final Research Report

• Project/Area Number: 19K15032
• Research Category: Grant-in-Aid for Early-Career Scientists
• Allocation Type: Multi-year Fund
• Review Section: Basic Section 21050:Electric and electronic materials-related
• Research Institution: Ryukoku University
• Principal Investigator: Beppu Kosuke 龍谷大学, 先端理工学部, 助教 (20824882)
• Project Period (FY): 2019-04-01 – 2022-03-31
• Keywords: 反強誘電体 / NaNbO3 / 薄膜 / エネルギー貯蔵

Outline of Final Research Achievements

In this work, the fabrication of NaNbO3-based antiferroelectric thin films and their energy storage capacity were investigated. Several antiferroelectric thin films (NaNbO3-CaZrO3, NaNbO3-SrZrO3 and NaNbO3-CaSnO3) were successfully fabricated. The control of growth direction for the antiferroelectric phase of NaNbO3 contributes the stabilization of the antiferroelectric phase in the film. Furthermore, the antiferroelectric thin films exhibited high thermal stability and an excellent energy storage density.

Free Research Field

無機材料化学

Academic Significance and Societal Importance of the Research Achievements

反強誘電体は強誘電体や常誘電体と比べ高い密度でエネルギーを蓄えることができるためエネルギー貯蔵用コンデンサなどへの応用が期待されている材料である．しかし，既報の材料は有害な鉛を用いたものが多く，非鉛化が求められている．本研究では非鉛反強誘電材料であるNaNbO3系酸化物薄膜の作製に成功し，そのエネルギー貯蔵特性は既報の誘電セラミックスに匹敵することを示した．また，NaNbO3系反強誘電薄膜の設計指針を見出しており，今後の材料設計に寄与する成果を得ている．