Elucidation of High Temperature Operation Mechanism of Newly Structured Semiconductor Laser and Application for Opto-Electronic Integrated Circuits

2021 Fiscal Year Final Research Report

• Project/Area Number: 19K15056
• Research Category: Grant-in-Aid for Early-Career Scientists
• Allocation Type: Multi-year Fund
• Review Section: Basic Section 21060:Electron device and electronic equipment-related
• Research Institution: National Institute of Information and Communications Technology
• Principal Investigator: Matsumoto Atsushi 国立研究開発法人情報通信研究機構, ネットワーク研究所フォトニックICT研究センター, 主任研究員 (30580188)
• Project Period (FY): 2019-04-01 – 2022-03-31
• Keywords: 半導体光デバイス / 光集積回路 / 通信

Outline of Final Research Achievements

In this research, we aimed to realize opto-electronic integrated circuits that satisfies the demands for increased communication speeds and capacities in networks, lower power consumption, smaller size, and lower cost device. We also aimed to develop photonic integrated circuits with good characteristics even in high-temperature environments, which were indispensable for such integrated circuits. If realized, it is expected it can be used to a wide range of applications. We focused on optical devices with quantum dot structures and fabricated a semiconductor laser using IID-QDI technology, which was a distinctive technology, and by which it could be integrated with many kinds of photonic devices with quantum dot structures on an InP substrate. We verified that this semiconductor laser had excellent temperature characteristics and clarified some of the physical factors behind the improvement in temperature characteristics.

Free Research Field

半導体光デバイス

Academic Significance and Societal Importance of the Research Achievements

本研究成果により、近い将来において問題になるネットワークにおける通信速度・容量の増大と低消費電力、小型・低コスト化に対応する光電子融合集積回路の実現と、さらにそのために必要不可欠な高温環境下においても良好な特性を有する光集積回路に向けて非常に有用な知見が得ることができた。これらの光電子融合集積回路や光集積回路が実現に至ることにより、ネットワークの諸問題に対応できるのみならず、幅広い応用が期待できる。