III-nitride semiconductor photonic crystals integrating active and passive devices

2020 Fiscal Year Final Research Report

• Project/Area Number: 19K23508
• Research Category: Grant-in-Aid for Research Activity Start-up
• Allocation Type: Multi-year Fund
• Review Section: 0302:Electrical and electronic engineering and related fields
• Research Institution: The University of Electro-Communications
• Principal Investigator: Tajiri Takeyoshi 電気通信大学, 大学院情報理工学研究科, 助教 (00842949)
• Project Period (FY): 2019-08-30 – 2021-03-31
• Keywords: 窒化物半導体 / フォトニック結晶 / 光回路

Outline of Final Research Achievements

Using III-nitride semiconductors with excellent controllability of light emission characteristics in visible wavelengths as a material, we experimentally investigated the feasibility of simultaneous integration of active and passive circuit components in a photonic crystal. A photo-electrochemical etching method using a semiconductor laser was developed for fabrication of high-quality air-suspended gallium nitride thin films (slabs) that can confine visible light. The possibility of fabricating a slab-type photonic crystal by this method, and feasibility of optical elements and localized quantum wells in the photonic crystal towards simultaneous integration of passive and active components were suggested in this study.

Free Research Field

フォトニック結晶

Academic Significance and Societal Importance of the Research Achievements

本研究成果は、GaN スラブ型フォトニック結晶上において、InGaN QWの局所形成が可能であることを示しており、今後、フォトニック結晶における能動素子・受動素子の同時集積化の実現につながる可能性がある。光素子の集積化による高度な可視光制御は、イメージングなどの応用に向けた基盤技術として将来期待される。