2020 Fiscal Year Final Research Report
Theoretical Study on Carrier Transport in SiC MOS Interfaces
Project/Area Number |
19K23514
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Research Category |
Grant-in-Aid for Research Activity Start-up
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Allocation Type | Multi-year Fund |
Review Section |
0302:Electrical and electronic engineering and related fields
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Research Institution | Osaka University (2020) Kyoto University (2019) |
Principal Investigator |
Tanaka Hajime 大阪大学, 工学研究科, 助教 (40853346)
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Project Period (FY) |
2019-08-30 – 2021-03-31
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Keywords | 炭化ケイ素 / MOS界面 / 移動度 / シミュレーション |
Outline of Final Research Achievements |
In this study, a carrier scattering model for SiC MOS inversion layers was developed and the Hall mobility of mobile electrons was calculated. Among the scattering processes, by fitting the parameters for the spatial distribution of electrically neutral defects, the experimentally reported behaviors of Hall mobility in SiC MOSFETs were reproduced to some extent. Based on this model, the drift mobility and the effective mobility, which describes the drain current characteristics of devices, were also investigated. In addition, the electronic states in bulk SiC and the two-dimensional electronic states in triangular potential were analyzed based on a more accurate description.
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Free Research Field |
半導体物性
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Academic Significance and Societal Importance of the Research Achievements |
本研究で構築したキャリア散乱モデルにより,多数のフィッティングパラメータを含むという問題点はあるものの,実験で報告されているSiC MOS反転層における移動度の振る舞いを,ある程度よく再現することができた.本成果は,今後の移動度律速要因の解明や,移動度向上指針の提示の基礎となる.また,電子状態のより高精度な記述は,MOS反転層の移動度モデルの高精度化につながるものである.
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