2020 Fiscal Year Final Research Report
Development of SiC hybrid integrated circuits operational under harsh environment
| Project/Area Number |
19K23515
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Multi-year Fund |
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| Review Section |
0302:Electrical and electronic engineering and related fields
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| Research Institution | Kyoto University |
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Principal Investigator |
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| Project Period (FY) |
2019-08-30 – 2021-03-31
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| Keywords | 炭化ケイ素 / 電界効果トランジスタ / 論理回路 |
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| Outline of Final Research Achievements |
In this study, we have calculated transfer characteristics of a complementary logic gate composed of silicon carbide p- and n-channel junction field-effect transistors (JFETs) and developed lateral power transistors simultaneously made with JFETs. We have shown the design rule of JFETs which enables stable operation from room temperature to high temperature. The lateral metal-semiconductor-oxide field-effect transistors was successfully fabricated with JFETs and showed blocking voltage of more than 600 V.
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| Free Research Field |
電子デバイス
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| Academic Significance and Societal Importance of the Research Achievements |
300℃以上の高温環境で動作可能な集積回路はエンジン燃焼室の燃費向上や表面温度が高い惑星（金星など）の探索など幅広い応用が期待されている。本研究で示した広い動作温度を考慮した回路動作予測・設計指針により、実応用を見据えた研究開発の進展に貢献できる。通常、大電圧を扱うパワーMOSFETは集積回路とは別のチップとして実装することが多いが、本研究により同一チップ上の作製（モノリシック化）が可能となり、システムの大幅な簡素化が期待できる。
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