2020 Fiscal Year Final Research Report
A new low-voltage power MOSFET structure and control to break through theoretical limit for high efficiency electric vehicle
Project/Area Number |
19K23518
|
Research Category |
Grant-in-Aid for Research Activity Start-up
|
Allocation Type | Multi-year Fund |
Review Section |
0302:Electrical and electronic engineering and related fields
|
Research Institution | Kyushu University |
Principal Investigator |
Saito Wataru (羽田野渉) 九州大学, 応用力学研究所, 教授 (10741770)
|
Project Period (FY) |
2019-08-30 – 2021-03-31
|
Keywords | パワーデバイス / パワーMOSFET / オン抵抗 / 制御 |
Outline of Final Research Achievements |
A new structure with the optimum gate control was proposed for low power loss operation of low-voltage power MOSFETs. Assist Gate (AG) structure and control signal were designed to conduct theoretical limit of AG power MOSFET. In the first year, ultra low on-resistance below conventional theoretical limit was shown. In the second year, by the gate signal design, turn-off and -on losses can be reduced 10% and 27% compared with the conventional theoretical limit, respectively. From these results, proposed AG power MOSFET with optimum gate control is effective to break through the conventional theoretical limit for high efficiency operation.
|
Free Research Field |
パワーデバイス
|
Academic Significance and Societal Importance of the Research Achievements |
本研究成果の学術的意義は、加工技術による低損失化の理論限界を打破できるのかという学術的な問いに対して、新規デバイスアシストゲート(AG)構造とその制御技術の組み合わせというパラダイムシフトによって、従来の加工技術で決まる理論限界を超えた低損失動作を実現できることを実証し、解となる新たな一つの方向性を示した点にある。 そして、本研究成果の社会的意義は、バッテリーからの電力を変換する回路を構成するパワーMOSFETの低損失化が自動車の電動化における電費向上につながり、地球温暖化対策に貢献するものである。
|