2009 Fiscal Year Final Research Report
Study on AlN phosphor based on stacking fault
| Project/Area Number |
20750169
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Inorganic industrial materials
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
TAKEDA Takashi National Institute for Materials Science, ナノセラミックスセンター, 主任研究員 (60344488)
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| Project Period (FY) |
2008 – 2009
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| Keywords | 蛍光体 / 局所構造 / 窒化アルミニウム / ユーロピム |
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| Research Abstract |
The luminescent center europium was studied for the rare earth doped aluminum nitride blue phosphor with silicon nitride. TEM measurement clarified europium and silicon forms the stacking fault between aluminum nitride blocks. Valence analysis showed divalent europium and local structure analysis showed europium occupation at large polyhedron site, coinciding with the luminescent property.
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