2009 Fiscal Year Final Research Report
Electric field induced metallic state in oxide channel field-effect transistors
| Project/Area Number |
20840029
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| Research Category |
Grant-in-Aid for Young Scientists (Start-up)
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| Allocation Type | Single-year Grants |
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| Research Field |
Condensed matter physics II
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| Research Institution | Osaka University |
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Principal Investigator |
NAKAMURA Hiroyuki Osaka University, 基礎工学研究科, 特任助教 (90506445)
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| Project Period (FY) |
2008 – 2009
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| Keywords | 表面・界面物性 / 誘電体物性 / 強相関エレクトロニクス / 超伝導材料・素子 |
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| Research Abstract |
Strong spin-orbit coupling effects on electrons induced at transition-metal oxide interface have been investigated by using field-effect transistor (FET) structures. Weak antilocalization of electrons was observed in KTaO_3 interface, whose detailed analysis led to the spin precession length of the order of 10 nm. This extremely short spin precession length could be understood in terms of strong spin-orbit coupling probably coming from Ta 5d conduction bands.
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