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2022 Fiscal Year Final Research Report

Development of power device with rock salt structure wide bandgap semiconductor grown by mist CVD method

Research Project

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Project/Area Number 20K04580
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Review Section Basic Section 21050:Electric and electronic materials-related
Research InstitutionKyoto University

Principal Investigator

Ikenoue Takumi  京都大学, エネルギー科学研究科, 助教 (00633538)

Co-Investigator(Kenkyū-buntansha) 三宅 正男  京都大学, エネルギー科学研究科, 准教授 (60361648)
平藤 哲司  京都大学, エネルギー科学研究科, 教授 (70208833)
Project Period (FY) 2020-04-01 – 2023-03-31
Keywords酸化物半導体 / 岩塩構造 / ミストCVD法
Outline of Final Research Achievements

We have achieved the following three points for NiO-MgO-ZnO ternary oxide semiconductors with rock salt structure. 1) The relationship between the composition and the lattice constant of NiO-MgO-ZnO was clarified. As a result, it was found that the NiO-MgO-ZnO films were lattice-matched with the MgO substrate when the Ni:Zn ratio was approximately 2:1. 2) lattice-matched NiO-MgO-ZnO thin films were grown on MgO substrates via mist CVD which is an environmental friendly method. In addition, regardless of the Mg composition, single phase rock salt structure NiO-MgO-ZnO films was formed on the MgO substrate over the entire composition range. 3) Various properties of lattice-matched NiO-MgO-ZnO thin films were evaluated, and doping was attempted.

Free Research Field

半導体工学、結晶工学、ワイドバンドギャップ半導体

Academic Significance and Societal Importance of the Research Achievements

SiやGaAsに代表される半導体技術は、材料のバンドギャップを大きくすることで、高耐圧、低損失、短波長化などの性能を向上させている。なかでも、GaN-InNは優れた特性を有し、最も期待される材料の1つであるが、バンドギャップの拡大に従って、格子定数が大きく変化してしまう。そこで、広範なバンドギャップの制御を行っても格子定数の変化しないNiO-MgO-ZnO系を提案する。この材料系は、環境負荷の小さな手法で成膜できることやNiO-MgO系でp型伝導性が実現されていることも魅力である。すなわち、性能の向上と環境に優しい半導体技術の期待できる研究課題である。

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Published: 2024-01-30  

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