Low dislocation AlN growth by super high temperature MOVPE in jet engine model

2022 Fiscal Year Final Research Report

• Project/Area Number: 20K21006
• Research Category: Grant-in-Aid for Challenging Research (Exploratory)
• Allocation Type: Multi-year Fund
• Review Section: Medium-sized Section 21:Electrical and electronic engineering and related fields
• Research Institution: The University of Tokushima
• Principal Investigator: NAGAMATSU Kentaro 徳島大学, ポストLEDフォトニクス研究所, 准教授 (40774378)
• Project Period (FY): 2020-07-30 – 2023-03-31
• Keywords: 窒化物半導体 / 高温結晶成長 / 窒化アルミニウム

Outline of Final Research Achievements

Computational fluid dynamics simulation estimated the reaction between the raw materials in high-temperature growth processing. Moreover, we realized to develop ultra-high temperature metalorganic vapor phase epitaxy with the immitted jet engine structure. Then, we study the improvement of crystalline quality in AlN for the underlying layer of deep ultra-violet LEDs. Specifically, this method can reduce parasitic reactions in the vapor phase for pre-reaction during raw material transportation by computational fluid dynamics simulation. The actual crystal growth experiment also reduced the parasitic reaction at the estimated growth condition in the simulation. The growth method achieved AlN crystal growth at over 1500℃, which is difficult to conventional metalorganic vapor phase epitaxy. We confirmed the improved crystalline quality of AlN by high-temperature growth.

Free Research Field

結晶工学

Academic Significance and Societal Importance of the Research Achievements

近年、殺菌技術の発展が求められるアプリケーションにおいて、深紫外LEDの要素技術と言えるAlNの結晶性改善に効果が高い高温結晶成長を実現した。AlNの高品質化により、深紫外LEDの高輝度化に大きく貢献できる可能性があり、デバイスの応用分野拡大や半導体レーザなど新たなデバイスの創出に発展することが期待される。また、結晶成長装置の高温プロセス実現は、AlNだけにとどまらず高温成長が求められる材料のポテンシャルを引き出すことが可能になり、新たな材料開発の礎となることを期待している。