Development of devices and systems toward realization of high-capacity wireless communications by terahertz waves

2013 Fiscal Year Final Research Report

• Project/Area Number: 21226010
• Research Category: Grant-in-Aid for Scientific Research (S)
• Allocation Type: Single-year Grants
• Research Field: Electron device/Electronic equipment
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: ASADA Masahiro 東京工業大学, 総合理工学研究科(研究院), 教授 (30167887)
• Co-Investigator(Kenkyū-buntansha): MIYAMOTO Yasuyuki 東京工業大学, 大学院理工学研究科, 教授 (40209953) ; NISHIYAMA Nobuhiko 東京工業大学, 大学院理工学研究科, 准教授 (80447531)
• Co-Investigator(Renkei-kenkyūsha): SUZUKI Safumi 東京工業大学, 大学院理工学研究科, 准教授 (40550471)
• Project Period (FY): 2009-05-11 – 2014-03-31
• Keywords: 電子デバイス・集積回路 / テラヘルツデバイス / 大容量無線通信 / 共鳴トンネルダイオード / 微細スロットアンテナ / テラヘルツ波の変調

Research Abstract

Toward realization of high-capacity wireless communications in the undeveloped terahertz frequency region, we investigated oscillation and modulation of terahertz waves, and wireless data transmission. For the oscillation device, we achieved room-temperature oscillation at 1.55 THz using resonant tunneling diodes with reduced electron delay, which is the highest frequency of semiconductor electron devices. High-power oscillation and high-speed direct modulation of these oscillators were achieved with the structure optimization of the integrated micro-antennas. Modulators for terahertz waves with optical signal and transistors with high current drivability for modulation were also obtained. Wireless data transmission was demonstrated with the resonant- tunneling-diode transmitter and Schottky-barrier-diode receiver, and feasibility of high-capacity communication was obtained.

Research Products

• [Journal Article] Fundamental oscillation up to 1.42 THz in resonant tunneling diodes by optimized collector spacer thickness (2014)
  • Author(s): H. Kanaya, R. Sogabe, T. Maekawa, S. Suzuki, and M. Asada
  • Journal Title: J. Infrared, Millimeter and Terahertz Waves Volume: vol.35 Pages: 425-431
  • DOI: 10.1007/s10762-014-0058-z
  • Peer Reviewed
• [Journal Article] High-power operation of terahertz oscillators with resonant tunneling diodes using impedancematched antennas and array configuration (2013)
  • Author(s): S. Suzuki, M. Shiraishi, H. Shibayama, and M. Asada
  • Journal Title: IEEE J. Selected Topics Quantum Electron Volume: vol.19, No.1 Pages: 8500108
  • DOI: 10.1109/JSTQE.2012.2215017
  • Peer Reviewed
• [Journal Article] High open-circuit voltage gain in vertical InGaAs channel metal-insulator semiconductor field effect transistor using heavily doped drain region and narrow channel mesa (2013)
  • Author(s): M. Kashiwano, J. Hirai, S. Ikeda, M. Fujimatsu, and Y. Miyamoto
  • Journal Title: Jpn. J. Appl. Phys Volume: vol.52 Pages: 04CF05(1-4)
  • DOI: 10.7567/JJAP.52.04CF05
  • Peer Reviewed
• [Journal Article] Direct intensity modulation and wireless data transmission characteristics of terahertz-oscillating resonant tunnelling diodes (2012)
  • Author(s): K. Ishigaki, M. Shiraishi, S. Suzuki, M. Asada, N. Nishiyama, and S. Arai
  • Journal Title: Electron. Lett Volume: vol.48, No.10 Pages: 582-583
  • DOI: 10.1049/el.2012.0849
  • Peer Reviewed
• [Journal Article] Preliminary experiment for direct media conversion to sub-terahertz wave signal from 1.55-μm optical signal using photon-generated free carriers (2009)
  • Author(s): M. Shirao, Y. Numajiri, R. Yokoyama, N. Nishiyama, M. Asada, and S. Arai
  • Journal Title: Jpn. J. Appl. Phys Volume: vol.48, No.9 Pages: 090203-1-3
  • DOI: 10.1143/JJAP.48.090203
  • Peer Reviewed
• [Presentation] Heavily doped epitaxially grown source in InGaAs MOSFET for high drain current density (2013)
  • Author(s): Y. Miyamoto, T. Kanazawa, Y. Yonai, A. Kato, K. Ohsawa, M. Oda, T. Irisawa, and T. Tezuka
  • Organizer: IEEE Semiconductor Interface Specialists Conf.(SICS 2013)
  • Place of Presentation: Arlington, VA
  • Year and Date: 2013-12-10
• [Presentation] Roomtemperature THz oscillators using resonant tunneling diodes (2013)
  • Author(s): M. Asada and S. Suzuki
  • Organizer: Int. Workshop. Optical THz Science and Tech. (OTST 2013)
  • Place of Presentation: Kyoto, Apr
  • Year and Date: 2013-04-02
• [Presentation] Roomtemperature THz oscillators using resonant tunneling diodes with reduced delay times (2012)
  • Author(s): M. Asada and S. Suzuki
  • Organizer: Int. Symp. Frontier THz Tech. (FTT 2012)
  • Place of Presentation: Nara
  • Year and Date: 2012-11-28
• [Presentation] Compact optical/THz signal converter using photo-generated carrier gate in THz waveguide (2012)
  • Author(s): D. Take, M. Shirao, K. Maruyama, N. Nishiyama, M. Asada, and S. Arai
  • Organizer: IEEE Photonics Conference (IPC 12)
  • Place of Presentation: Burlingame (USA)
  • Year and Date: 2012-09-24
• [Presentation] THz oscillators using resonant tunneling diodes at room temperature (2010)
  • Author(s): M. Asada and S. Suzuki
  • Organizer: Int. Conf. Infrared & Millimeter Waves and Terahertz Electronics (IRMMW-THz 2010)
  • Place of Presentation: Rome
  • Year and Date: 2010-09-07
  • Invited
• [Book] Resonant tunneling diodes for THz sources", Chapter 7, Handbook of Terahertz Technologies, edited by H.-J. Song and T. Nagatsuma (2014)
  • Author(s): M. Asada and S. Suzuki
  • Publisher: Pan Stanford Publishing (出版予定)
• [Book] グリーンナノテクノロジー, 編集(ナノテクノロジーネットワーク編 集委員会委員) (2011)
  • Author(s): 宮本恭幸
  • Total Pages: 217
  • Publisher: 日刊工業新聞社
• [Remarks]
  • URL: http://www.pe.titech.ac.jp/AsadaLab/Asada_Lab.html
• [Remarks]
  • URL: http://www.pe.titech.ac.jp/Furuya-MiyamotoLab/index.htm
• [Remarks]
  • URL: http://www.pe.titech.ac.jp/AraiLab/inind.html
• [Remarks] 「RTD 素子の性能が大きく向上、室温で1.42THz を発振-テラヘルツ波の用途拡大に道」,日経エレクトロニクス,2014年1月 報道等
• [Remarks] 「共鳴トンネル構造によるテラヘルツ波の発生とその応用」,科研費NEWS(学振),vol.4, p.8,2012 報道等
• [Remarks] "Milestone for wi-fi with T-rays",BBC News, 2012年5月16日、報道等
• [Remarks] "Re-grown source-drain III-V MOSFETs demonstrate higher drain current", Semiconductor Today, 2011年5月 報道等
• [Patent(Industrial Property Rights)] 共鳴トンネルダイオードおよびテラヘルツ発振器 (2013)
  • Inventor(s): 杉山弘樹,横山春喜,浅田雅洋,鈴木左文
  • Industrial Property Rights Holder: 日本電信電話株式会社,東京工業大学
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 特許第5445936 号
  • Acquisition Date: 2013-12-10
• [Patent(Industrial Property Rights)] 共鳴トンネルダイオードおよびテラヘルツ発振器 (2012)
  • Inventor(s): 杉山弘樹,鈴木左文,浅田雅洋
  • Industrial Property Rights Holder: 日本電信電話株式会社,東京工業大学
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 特願2012-34749
  • Filing Date: 2012-02-21