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2012 Fiscal Year Final Research Report

Controlling of hetero-, nano-structures andtheir properties and band engineering using InN and related alloys

Research Project

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Project/Area Number 21246004
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionRitsumeikan University

Principal Investigator

NANISHI Yasushi  立命館大学, 立命館グローバル・イノベーション研究機構, 教授 (40268157)

Co-Investigator(Kenkyū-buntansha) ARAKI Tsutomu  立命館大学, 理工学, 准教授 (20312126)
Co-Investigator(Renkei-kenkyūsha) YAMAGUCHI Tomihiro  立命館大学, 総合科学技術研究機構, ポストドクトラルフェロー (50454517)
KANEKO Masamitsu  立命館大学, 総合理工学研究機構, ポストドクトラルフェロー (70374709)
WANG Ke  立命館大学, 総合科学技術研究機構, ポストドクトラルフェロー (60532223)
KIKAWA Jyunjiro  立命館大学, 総合理工学研究機構, 教授 (70469196)
Project Period (FY) 2009 – 2012
Keywordsヘテロ構造 / InN / MBE
Research Abstract

Using novel growth method of high-quality InN called DERI (Droplet Elimination by Radical beam Irradiation), we have developed thick and high-quality crystal growth of InN and InGaN, precise control of InGaN composition using radical monitoring, p-type conductivity by Mg doping, fabrication of hetero-, and nano-structures basedon InGaN/InGaN, and basic process for InN-based optoelectronic devices.

  • Research Products

    (19 results)

All 2013 2012 2011 2010 2009 Other

All Journal Article (10 results) (of which Peer Reviewed: 10 results) Presentation (6 results) Book (1 results) Remarks (1 results) Patent(Industrial Property Rights) (1 results) (of which Overseas: 1 results)

  • [Journal Article] Application of DERI Method to InN/InGaN MQW, Thick InGaN and InGaN/InGaN MQW Structure Growth2013

    • Author(s)
      T. Yamaguchi, K. Wang, T. Araki, T. Honda, E. Yoon, Y. Nanishi
    • Journal Title

      Proceedings of SPIE "Gallium Nitride Materials and Devices VIII

      Volume: 8625巻 Pages: 862502

    • DOI

      DOI: 10.1117/12.2007258

    • Peer Reviewed
  • [Journal Article] P-type InGaN across the entire alloy composition range2013

    • Author(s)
      K. Wang, T. Araki, K. M. Yu, T. Katsuki, M. A. Mayer, E. Alarcon-Llado, J. W. Ager, III, W. Walukiewicz and Y. Nanishi
    • Journal Title

      Appl. Phys. Lett.

      Volume: 102巻 Pages: 102111/1-4

    • DOI

      DOI: 10.1063/1.4795718

    • Peer Reviewed
  • [Journal Article] Fabrication of Nano-structure of A-plane InN on Patterned A-plane GaN Template by ECR-MBE2012

    • Author(s)
      T. Araki, S. Yamashita, T. Yamaguchi, E. Yoon, and Y. Nanishi
    • Journal Title

      physica status solidi (a)

      Volume: 209巻 Pages: 447-450

    • DOI

      DOI: 10.1002/pssa.201100520

    • Peer Reviewed
  • [Journal Article] Application of Droplet Elimination Process by Radical -Beam Irradiation to InGaN Growth and Fabrication of InN/InGaN Periodic Structure2011

    • Author(s)
      T. Yamaguchi, H. Umeda, T. Araki, and Y. Nanishi
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 50巻 Pages: 04DH08/1-4

    • DOI

      DOI: 10.1143/JJAP.50.04DH08

    • Peer Reviewed
  • [Journal Article] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation2011

    • Author(s)
      T. Yamaguchi, T. Arakiand Y. Nanishi
    • Journal Title

      Proceedings of SPIE photonic West 2011

      Volume: 7939巻 Pages: 793904/1-4

    • DOI

      DOI: 10.1117/12.874840

    • Peer Reviewed
  • [Journal Article] Mg Doped InN and Confirmation of Free Holes in InN2011

    • Author(s)
      K. Wang, N. Miller, R. Iwamoto, T. Yamaguchi, M. A. Mayer, T. Araki, Y. Nanishi, K. M. Yu, E. E. Haller, W. Walukiewicz, J. W. Ager III
    • Journal Title

      Appl. Phys. Lett

      Volume: 98巻 Pages: 042104/1-3

    • DOI

      DOI: 10.1063/1.3543625

    • Peer Reviewed
  • [Journal Article] In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN2011

    • Author(s)
      K. Wang, T. Yamaguchi, T. Araki, E. Yoon, Y. Nanishi
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 50巻 Pages: 01AE02/1-4

    • DOI

      DOI: 10.1143/JJAP.50.01AE02

    • Peer Reviewed
  • [Journal Article] New MBE Growth Method for High Quality InN and Related Alloys Using in Situ Monitoring Technology2010

    • Author(s)
      T. Yamaguchiand Y. Nanishi
    • Journal Title

      phys. stat.sol. (a)

      Volume: 207巻 Pages: 19-23

    • DOI

      DOI: 10.1002/pssa.200982638

    • Peer Reviewed
  • [Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers2010

    • Author(s)
      K. Wang, T. Yamaguchi, A. Takeda, T. Kimura, K. Kawashima, T. Arakiand Y. Nanishi
    • Journal Title

      phys. stat. sol. (a)

      Volume: 207巻 Pages: 1356-1360

    • DOI

      DOI: 10.1002/pssa.200983657

    • Peer Reviewed
  • [Journal Article] Indium Droplet Elimination by Radical Beam Irradiation for Reproducible and High-Quality Growth of InN by RF Molecular Beam Epitaxy2009

    • Author(s)
      T. Yamaguchiand Y. Nanishi
    • Journal Title

      Applied Physics Express

      Volume: 2巻 Pages: 051001/1-3

    • DOI

      DOI: 10.1143/APEX.2.051001

    • Peer Reviewed
  • [Presentation] Recent Progress on InN and InGaN Growth for Future Optoelectronic Devices2013

    • Author(s)
      Y. Nanishi, T. Yamaguchi, K. Wang, T. Arakiand E. Yoon
    • Organizer
      Conference on LED and Its Industrial Application (LEDIA-13)
    • Place of Presentation
      パシフィコ横浜(神奈川県)
    • Year and Date
      2013-04-23
  • [Presentation] Recent Development of Growth and Characterization of InN, In-rich InGaN and Those Nano-structures2012

    • Author(s)
      Y. Nanishi, T. Yamaguchi, K. Wang, T. Arakiand E. Yoon
    • Organizer
      IEEE International Conference on Solid-State and Integrated Circuit Technology、発表年月日
    • Place of Presentation
      西安(中国)
    • Year and Date
      2012-10-31
  • [Presentation] Toward Longer Wavelength and Higher Speed -Challenge to Utilize Full Span of Nitride Semiconductors-Band gap-2012

    • Author(s)
      Y. Nanishi, T. Yamaguchi, K. Wang, T. Arakiand E. Yoon
    • Organizer
      2012 Fall Meeting of the Korean Ceramic Society
    • Place of Presentation
      大田(韓国)
    • Year and Date
      2012-10-19
  • [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano-structures2011

    • Author(s)
      Y. Nanishi, T. Yamaguchi, K. Wangand T. Araki
    • Organizer
      Workshop on Frontier Photonic and Electronic Materials and Devices 2011 German - Japanese - Spanish Joint Workshop
    • Place of Presentation
      グラナダ(スペイン)
    • Year and Date
      2011-03-17
  • [Presentation] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation2011

    • Author(s)
      T. Yamaguchi, Y. Nanishi
    • Organizer
      SPIE Photonic West 2011
    • Place of Presentation
      サンフランシスコ(アメリカ)
    • Year and Date
      2011-01-24
  • [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Device Applications2010

    • Author(s)
      Y. Nanishi, T. Yamaguchi, K. Wang, T. Araki, M. Kaneko, E. Yoon, N. Miller, J. W. Ager III, K. M. Yu, W. Walukiewicz
    • Organizer
      The International Workshop on Nitride semiconductors (IWN2010)
    • Place of Presentation
      タンパ(アメリカ)
    • Year and Date
      2010-09-21
  • [Book] Chapter: 1 - Molecular-beam epitaxy of InN in Indium Nitride and Related Alloys (Editors: T. D. Veal, C. F. McConville, and W. J. Schaff)2009

    • Author(s)
      Y. Nanishi, T. Arakiand T. Yamaguchi
    • Total Pages
      1-50
    • Publisher
      CRC
  • [Remarks]

    • URL

      http://www.ritsumei.ac.jp/se/re/nanishilab/Nanishi-Lab.html

  • [Patent(Industrial Property Rights)] 窒化物半導体薄膜の製造方法2009

    • Inventor(s)
      山口智広,名西〓之
    • Industrial Property Rights Holder
      学校法人立命館
    • Industrial Property Number
      特許 特願 2009-119315
    • Filing Date
      2009-05-15
    • Overseas

URL: 

Published: 2014-08-29   Modified: 2015-10-28  

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