Controlling of hetero-, nano-structures andtheir properties and band engineering using InN and related alloys

2012 Fiscal Year Final Research Report

• Project/Area Number: 21246004
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Ritsumeikan University
• Principal Investigator: NANISHI Yasushi 立命館大学, 立命館グローバル・イノベーション研究機構, 教授 (40268157)
• Co-Investigator(Kenkyū-buntansha): ARAKI Tsutomu 立命館大学, 理工学, 准教授 (20312126)
• Co-Investigator(Renkei-kenkyūsha): YAMAGUCHI Tomihiro 立命館大学, 総合科学技術研究機構, ポストドクトラルフェロー (50454517) ; KANEKO Masamitsu 立命館大学, 総合理工学研究機構, ポストドクトラルフェロー (70374709) ; WANG Ke 立命館大学, 総合科学技術研究機構, ポストドクトラルフェロー (60532223) ; KIKAWA Jyunjiro 立命館大学, 総合理工学研究機構, 教授 (70469196)
• Project Period (FY): 2009 – 2012
• Keywords: ヘテロ構造 / InN / MBE

Research Abstract

Using novel growth method of high-quality InN called DERI (Droplet Elimination by Radical beam Irradiation), we have developed thick and high-quality crystal growth of InN and InGaN, precise control of InGaN composition using radical monitoring, p-type conductivity by Mg doping, fabrication of hetero-, and nano-structures basedon InGaN/InGaN, and basic process for InN-based optoelectronic devices.

Research Products

• [Journal Article] Application of DERI Method to InN/InGaN MQW, Thick InGaN and InGaN/InGaN MQW Structure Growth (2013)
  • Author(s): T. Yamaguchi, K. Wang, T. Araki, T. Honda, E. Yoon, Y. Nanishi
  • Journal Title: Proceedings of SPIE "Gallium Nitride Materials and Devices VIII Volume: 8625巻 Pages: 862502
  • DOI: DOI: 10.1117/12.2007258
  • Peer Reviewed
• [Journal Article] P-type InGaN across the entire alloy composition range (2013)
  • Author(s): K. Wang, T. Araki, K. M. Yu, T. Katsuki, M. A. Mayer, E. Alarcon-Llado, J. W. Ager, III, W. Walukiewicz and Y. Nanishi
  • Journal Title: Appl. Phys. Lett. Volume: 102巻 Pages: 102111/1-4
  • DOI: DOI: 10.1063/1.4795718
  • Peer Reviewed
• [Journal Article] Fabrication of Nano-structure of A-plane InN on Patterned A-plane GaN Template by ECR-MBE (2012)
  • Author(s): T. Araki, S. Yamashita, T. Yamaguchi, E. Yoon, and Y. Nanishi
  • Journal Title: physica status solidi (a) Volume: 209巻 Pages: 447-450
  • DOI: DOI: 10.1002/pssa.201100520
  • Peer Reviewed
• [Journal Article] Application of Droplet Elimination Process by Radical -Beam Irradiation to InGaN Growth and Fabrication of InN/InGaN Periodic Structure (2011)
  • Author(s): T. Yamaguchi, H. Umeda, T. Araki, and Y. Nanishi
  • Journal Title: Jpn. J. Appl. Phys. Volume: 50巻 Pages: 04DH08/1-4
  • DOI: DOI: 10.1143/JJAP.50.04DH08
  • Peer Reviewed
• [Journal Article] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation (2011)
  • Author(s): T. Yamaguchi, T. Arakiand Y. Nanishi
  • Journal Title: Proceedings of SPIE photonic West 2011 Volume: 7939巻 Pages: 793904/1-4
  • DOI: DOI: 10.1117/12.874840
  • Peer Reviewed
• [Journal Article] Mg Doped InN and Confirmation of Free Holes in InN (2011)
  • Author(s): K. Wang, N. Miller, R. Iwamoto, T. Yamaguchi, M. A. Mayer, T. Araki, Y. Nanishi, K. M. Yu, E. E. Haller, W. Walukiewicz, J. W. Ager III
  • Journal Title: Appl. Phys. Lett Volume: 98巻 Pages: 042104/1-3
  • DOI: DOI: 10.1063/1.3543625
  • Peer Reviewed
• [Journal Article] In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN (2011)
  • Author(s): K. Wang, T. Yamaguchi, T. Araki, E. Yoon, Y. Nanishi
  • Journal Title: Jpn. J. Appl. Phys. Volume: 50巻 Pages: 01AE02/1-4
  • DOI: DOI: 10.1143/JJAP.50.01AE02
  • Peer Reviewed
• [Journal Article] New MBE Growth Method for High Quality InN and Related Alloys Using in Situ Monitoring Technology (2010)
  • Author(s): T. Yamaguchiand Y. Nanishi
  • Journal Title: phys. stat.sol. (a) Volume: 207巻 Pages: 19-23
  • DOI: DOI: 10.1002/pssa.200982638
  • Peer Reviewed
• [Journal Article] Optical Polarization Anisotropy of Nonpolar InN Epilayers (2010)
  • Author(s): K. Wang, T. Yamaguchi, A. Takeda, T. Kimura, K. Kawashima, T. Arakiand Y. Nanishi
  • Journal Title: phys. stat. sol. (a) Volume: 207巻 Pages: 1356-1360
  • DOI: DOI: 10.1002/pssa.200983657
  • Peer Reviewed
• [Journal Article] Indium Droplet Elimination by Radical Beam Irradiation for Reproducible and High-Quality Growth of InN by RF Molecular Beam Epitaxy (2009)
  • Author(s): T. Yamaguchiand Y. Nanishi
  • Journal Title: Applied Physics Express Volume: 2巻 Pages: 051001/1-3
  • DOI: DOI: 10.1143/APEX.2.051001
  • Peer Reviewed
• [Presentation] Recent Progress on InN and InGaN Growth for Future Optoelectronic Devices (2013)
  • Author(s): Y. Nanishi, T. Yamaguchi, K. Wang, T. Arakiand E. Yoon
  • Organizer: Conference on LED and Its Industrial Application (LEDIA-13)
  • Place of Presentation: パシフィコ横浜(神奈川県)
  • Year and Date: 2013-04-23
• [Presentation] Recent Development of Growth and Characterization of InN, In-rich InGaN and Those Nano-structures (2012)
  • Author(s): Y. Nanishi, T. Yamaguchi, K. Wang, T. Arakiand E. Yoon
  • Organizer: IEEE International Conference on Solid-State and Integrated Circuit Technology、発表年月日
  • Place of Presentation: 西安(中国)
  • Year and Date: 2012-10-31
• [Presentation] Toward Longer Wavelength and Higher Speed -Challenge to Utilize Full Span of Nitride Semiconductors-Band gap- (2012)
  • Author(s): Y. Nanishi, T. Yamaguchi, K. Wang, T. Arakiand E. Yoon
  • Organizer: 2012 Fall Meeting of the Korean Ceramic Society
  • Place of Presentation: 大田(韓国)
  • Year and Date: 2012-10-19
• [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Those Nano-structures (2011)
  • Author(s): Y. Nanishi, T. Yamaguchi, K. Wangand T. Araki
  • Organizer: Workshop on Frontier Photonic and Electronic Materials and Devices 2011 German - Japanese - Spanish Joint Workshop
  • Place of Presentation: グラナダ(スペイン)
  • Year and Date: 2011-03-17
• [Presentation] Growth and Fabrication of InN-based III-nitride Structure Using Droplet Elimination Process by Radical Beam Irradiation (2011)
  • Author(s): T. Yamaguchi, Y. Nanishi
  • Organizer: SPIE Photonic West 2011
  • Place of Presentation: サンフランシスコ(アメリカ)
  • Year and Date: 2011-01-24
• [Presentation] Recent Progress in Growth and Characterization of InN and Related Alloys and Challenges for Device Applications (2010)
  • Author(s): Y. Nanishi, T. Yamaguchi, K. Wang, T. Araki, M. Kaneko, E. Yoon, N. Miller, J. W. Ager III, K. M. Yu, W. Walukiewicz
  • Organizer: The International Workshop on Nitride semiconductors (IWN2010)
  • Place of Presentation: タンパ(アメリカ)
  • Year and Date: 2010-09-21
• [Book] Chapter: 1 - Molecular-beam epitaxy of InN in Indium Nitride and Related Alloys (Editors: T. D. Veal, C. F. McConville, and W. J. Schaff) (2009)
  • Author(s): Y. Nanishi, T. Arakiand T. Yamaguchi
  • Total Pages: 1-50
  • Publisher: CRC
• [Remarks]
  • URL: http://www.ritsumei.ac.jp/se/re/nanishilab/Nanishi-Lab.html
• [Patent(Industrial Property Rights)] 窒化物半導体薄膜の製造方法 (2009)
  • Inventor(s): 山口智広,名西〓之
  • Industrial Property Rights Holder: 学校法人立命館
  • Industrial Property Number: 特許 特願 2009-119315
  • Filing Date: 2009-05-15
  • Overseas