2011 Fiscal Year Final Research Report
Characterization of Defect Levels with Energy and Spatial Distribution by Deep Level Microscope
| Project/Area Number |
21360003
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Saitama University |
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Principal Investigator |
KAMATA Norihiko 埼玉大学, 大学院・理工学研究科, 教授 (50211173)
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| Co-Investigator(Kenkyū-buntansha) |
FUKUDA Takeshi 埼玉大学, 大学院・理工学研究科, 助教 (40509121)
HIRAYAMA Hideki 理化学研究所 (70270593)
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| Project Period (FY) |
2009 – 2011
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| Keywords | 欠陥準位 / フォトルミネッセンス / 2波長励起 / 非接触測定 |
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| Research Abstract |
By utilizing both above-gap and below-gap excitation sources with a gated CCD camera, the scheme of two-wavelength excited photoluminescence has been improved to detect nonradiative recombination (NRR) centers in various materials. An energy distribution of NRR centers at around 1.55eV was obtained in an InGaN quantum well. Detection of NRR centers in InGaAs quantum wells and Ba_3Si_6O_<12>N_2:Eu^<2+> phosphors became possible for the first time.
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