2011 Fiscal Year Final Research Report
Fabrication of wide band gap semi-conductor materials based on amorphous carbon and development of new electronic devices
| Project/Area Number |
21360152
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Yamaguchi University |
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Principal Investigator |
HONDA Kensuke 山口大学, 大学院・理工学研究科, 准教授 (60334314)
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| Project Period (FY) |
2009 – 2011
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| Keywords | ダイヤモンドライクカーボン / ワイドバンドギャップ半導体 / 電気・電子材料 |
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| Research Abstract |
The objective of this study is to establish a method for fabricating novel wide gap semiconductor films based on amorphous carbon. Nitrogen and boron atoms could be incorporated in amorphous carbon films by plasma-CVD method using liquid carbon sources. These nitrogen-incorporated and boron-incorporated films showed n-type and p-type semi-conductivity, respectively. The carrier densities could be varied from 3. 24×10^<14> cm^<-3> to 1. 29×10^<19> cm^<-3>. Optical gaps of these films were quite low(0. 655-0. 507 eV). Then, Si atoms were added to N-doped amorphous carbon up to 25 atom%. Resulting films exhibited higher optical gap(ca. 1. 7 eV). The carrier density and mobility were 4. 789×1014 cm^<-3> and 0. 2981 cm^<2> V^<-1> s^<-1>, respectively. In photoelectrochemical measurement, the photocurrent of 153μA cm^<-2> was observed under Xenon? lamp illumination(11. 8 W m^<-2>). The value was close to that of TiO_2 thin films. The quantum yield was 4. 87%. It was concluded that high performance semi-conductive thin films of which incident photon-to-current conversion efficiency is equivalent to TiO_2 could be successfully synthesized.
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