2011 Fiscal Year Final Research Report
A diamond thin film growth on SiC buffer layer on a Si substrate
| Project/Area Number |
21560334
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kyushu University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
TEII Kungen 九州大学, 大学院・総合理工学研究院, 准教授 (10335995)
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| Project Period (FY) |
2009 – 2011
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| Keywords | 電気・電子材料(半導体、誘電体、磁性体、超誘電体、有機物、絶縁体、超伝導体など) / 結晶成長 |
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| Research Abstract |
The purpose of this research is to use low cost Si substrate for fabricating future power devices using nanocrystalline diamond (NCD) on SiC/Si substrate. We have succeeded in fabricating pn diode using n-type NCD film on a SiC film grown on p-type Si substrate.
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