2011 Fiscal Year Final Research Report
Studies on nature of defect centers and charge trapping characteristics of silicon nitride films and low dielectric constant dielectric films for the nonvolatile memory applications
| Project/Area Number |
21560336
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokai University |
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Principal Investigator |
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| Project Period (FY) |
2009 – 2011
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| Keywords | 半導体メモリ |
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| Research Abstract |
The nature of the K centers in silicon nitride films was investigated. We revealed that the paramagnetic K^0 centers acted as generation centers of electron-hole pairs in the nitride films. It was also shown that hole trap sites in the silicon nitride films in memory devices fabricated in the present study were not K centers. In addition, silicon nitride films with a high density of hole traps were formed using low-temperature catalytic chemical vapor deposition(Cat-CVD). The Cat-CVD nitride films provided the superior retention characteristics in the erase condition of memory elements. We also showed that low-dielectric constant SiCN films yielded sufficient retention characteristics for the charge trapping dielectric layer of nonvolatile memory devises.
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