2011 Fiscal Year Final Research Report
Memory effect on ferroelectric-fluorescence nano-ordered layer structure and its application to optoelectronic nonvolatile memory
| Project/Area Number |
21560338
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kanazawa Institute of Technology |
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Principal Investigator |
AIZAWA Koji 金沢工業大学, 工学部, 教授 (40222450)
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| Co-Investigator(Kenkyū-buntansha) |
TOKUNAGA Yoshiaki 金沢工業大学, 工学部, 教授 (00072174)
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| Project Period (FY) |
2009 – 2011
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| Keywords | 薄膜・量子構造 / 電気・電子材料 / 電気・電子材料 |
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| Research Abstract |
Fabrication and characterization of the ferroelectric/fluorescent nano-order layer structures were investigated in order to realize optoelectronic nonvolatile memory. Particularly, the crystallinity, electrical, and optical properties of sol-gel-derived(Ba_<0.6> Sr_<0.4>) TiO_3(BST)/(Sr_<0.8> Eu_<0.2>) Bi_2Ta_2O_9(Eu-SBT) structures grown on SrTiO_3(110) substrates were clarified for the first time, in which BST and Eu-SBT were used as ferroelectrics and phosphor, respectively. In the present structures, the Eu-SBT films partly included a(116)-oriented crystallite, and then the polarization vs. voltage characteristics of the BST/Eu-SBT structures showed the hysteresis loop caused by spontaneous polarization reversal. Several emissions from Eu^(3+) ion were observed in photoluminescence and electroluminescence spectra of a present BST/Eu-SBT structure. In conclusion, BST/Eu-SBT/STO(110) structures were promising candidate for optoelectronic nonvolatile memory devices.
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