2011 Fiscal Year Final Research Report
Fabrication of planar-type GaN-based surface emitting devices
| Project/Area Number |
21560361
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Kogakuin University |
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Principal Investigator |
HONDA Tohru 工学院大学, 工学部, 教授 (20251671)
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| Project Period (FY) |
2009 – 2011
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| Keywords | 光デバイス / 光回路 |
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| Research Abstract |
GaN-based light-emitting pixels for the micro displays require the large-scale integration and their cost-effective fabrication. In this study, GaN-based Schottky-type LEDs and their integration were investigated. I found the face-pack process was effective for their reduction of the reverse-bias leakage current. This is also effective for the increase of light-emission efficiency. I have also proposed the MgZnO-based transparent electrode for the light-emitting devices.
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