2011 Fiscal Year Final Research Report
Innovative hybrid tandem-type white LED
| Project/Area Number |
21686034
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Meijo University |
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Principal Investigator |
IWAYA Motoaki 名城大学, 理工学部, 准教授 (40367735)
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| Project Period (FY) |
2009 – 2011
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| Keywords | 半導体 |
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| Research Abstract |
In this study, we proceed following the establishment of fundamental technology for nitride based semiconductor emitters
(1) Technology for fabrication of GaInN based LED with wavelength region from violet to red.
(2) Moth-eye technology
(3) Laser lift off process
(4) Ag-Pd-Cu alloys high reflective contact
(5) Transparent contact
(6) DBR
(7) High hole concentration p-type GaInN
In addition, we have advanced the realization of a new device by applying these techniques.
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Research Products
(52 results)
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[Journal Article] Properties of nitride-based photovoltaic cells under concentrated light illumination2012
Author(s)
S. Yamamoto, M. Mori, Y. Kuwahara, T. Fujii, T. Nakao, S. Kondo, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
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Journal Title
Rapid Research Letters
Volume: Vol.6
Pages: 145
Peer Reviewed
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[Journal Article] GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate2011
Author(s)
Y. Kuwahara, T. Fujii, T. Sugiyama, D. Iida, Y. Isobe, Y. Fujiyama, Y. Morita, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
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Journal Title
Applied Physics Express
Volume: Vol.4
Pages: 021001
Peer Reviewed
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[Journal Article] GaInN-based solar cells using GaInN/GaInN superlattices2011
Author(s)
T. Fujii, Y. Kuwahara, D. Iida, Y. Fujiyama, Y. Morita, T. Sugiyama, Y. Isobe, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
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Journal Title
physica status solidi(c)
Volume: Volume 8
Pages: 2463-2465
Peer Reviewed
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[Journal Article] Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode2010
Author(s)
R. Kawai, T. Kondo, A. Suzuki, F. Teramae, T. Kitano, K. Tamura, H. Sakurai, M. Iwaya, H. Amano, S. Kamiyama, I. Akasaki, M. Chen, A. Li, and K. Su
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Journal Title
physica status solidi(c)
Volume: Vol.7
Pages: 2180-2182
Peer Reviewed
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[Presentation] Fabrication of the High Efficiency GaInN Based Solar Cells2011
Author(s)
M. Iwaya, Y. Kuwahara, T. Fujii, Y. Morita, T. Nakao, S. Yamamoto, T. Takeuchi, S. Kamiyama, I. Akasaki, and H. Amano
Organizer
16th Semiconducting and Insulating Materials Conference(SIMC-XVI)
Place of Presentation
School of Information and Communication Technology, KTH, Stockholm
Year and Date
20110619-23
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[Presentation] Internal quantum efficiency of nitride-basedlight emitting devices2011
Author(s)
H. Amano, T. Tabata, G. J. Park, T. Murase, T. Sugiyama, T. Tanikawa, Y. Kawai, Y. Honda, M. Yamaguchi, K. Takeda, M. Iwaya, T. Takeuchi, I. Akasaki, M. Imade, Y. Kitaoka, and Y. Mori
Organizer
5th Asia-Pacific Workshop on Widegap Semiconductors
Place of Presentation
Toba, Mie, Japan
Year and Date
20110522-26
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[Presentation] High temperature MOVPE of AlGaN for UV/DUV devices and increased pressure MOVPE of InGaN for green/yellow devices2011
Author(s)
H. Amano, T. Ohata, S. Sakakura, T. Sugiyama, T. Tanikawa, Y. Honda, M. Yamaguchi, N. Miyoshi, M. Imade, Y. Mori, K. Ban, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
Organizer
E-MRS ICAM IUMRS 2011 Spring Meeting
Place of Presentation
Nice, France
Year and Date
20110509-13
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[Presentation] IQE and EQE of the nitride-based UV/DUV LEDs2011
Author(s)
H. Amano, G. J. Park, T. Tanikawa, Y. Honda, M. Yamaguchi, K. Ban, K. Nagata, K. Nonaka, K. Takeda, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki
Organizer
CLEO 2011
Place of Presentation
Baltimore, Maryland, USA
Year and Date
20110501-06
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[Presentation] Strain relaxation of AlGaN grown on AlN templates by misfit dislocation generation2010
Author(s)
Z. H. Wu, K. Nonaka, Y. Kawai, T. Asai, F. A. Ponce, C. Q. Chen, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
Organizer
The 8th International Symposium on Semiconductor Light Emitting Devices(ISSLED2010)
Place of Presentation
Beijing, China
Year and Date
20100516-21
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