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2010 Fiscal Year Final Research Report

Development of polarization-free CdTe radiation detector

Research Project

  • PDF
Project/Area Number 21760051
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeSingle-year Grants
Research Field Applied physics, general
Research InstitutionUniversity of the Ryukyus

Principal Investigator

YAMAZATO Masaaki  University of the Ryukyus, 工学部, 准教授 (10322299)

Project Period (FY) 2009 – 2010
Keywords放射線 / X線 / 粒子線 / 電子デバイス・機器 / 電子・電気材料
Research Abstract

This research is the improvement of the polarization phenomenon for the Schottky type CdTe radiation detector. Aluminum, titanium and nickel were used for the Schottky electrode for the CdTe; and the Al/CdTe/Pt, Ti/CdTe/Pt, and Ni/CdTe/Pt Schottky diodes were fabricated. All these diodes showed the excellent electrical property and the high quality of g-ray radiation detection compared with the commercial In/CdTe/Pt diode. Polarization phenomenon was drastically improved by the sulfur treatment of CdTe surface, and the long-time measurement (about 1day) of γ-ray radiation was achieved. Furthermore, we investigated the passivation film for CdTe radiation detector. Amorphous carbon films showed enough electrical properties (high electrical resistivity and low permittivity) for the insulation between electrodes, and that is a promising candidate of the insulative passivation film for CdTe radiation detector.

  • Research Products

    (9 results)

All 2010 2009 Other

All Journal Article (1 results) (of which Peer Reviewed: 1 results) Presentation (7 results) Remarks (1 results)

  • [Journal Article] Structure and electrical properties of a-C : H thin films deposited by RF sputtering2010

    • Author(s)
      M.Yamazato, I.Mizuma, A.Higa
    • Journal Title

      Vol.19

      Pages: 695-698

    • Peer Reviewed
  • [Presentation] CdTe結晶上へのショットキー電極形成における熱処理の効果(III)2010

    • Author(s)
      渡慶次高也, 比嘉晃, 大野良一, 山里将朗
    • Organizer
      応用物理学会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
  • [Presentation] 硫黄処理および熱処理がCdTe結晶表面へ与える影響2010

    • Author(s)
      藤本誠也, 比嘉晃, 大野良一, 山里将朗
    • Organizer
      応用物理学会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
  • [Presentation] CdTe結晶上へのTiショットキー電極形成(III)2010

    • Author(s)
      高良正人, 比嘉晃, 大野良一, 山里将朗
    • Organizer
      応用物理学会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-16
  • [Presentation] CdTe結晶上へのショットキー電極形成における熱処理の効果(II)2010

    • Author(s)
      渡慶次高也, 山内徹也, 藤本誠也, 山里将朗, 大野良一, 比嘉晃
    • Organizer
      応用物理学会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-18
  • [Presentation] CdTe結晶上へのショットキー電極形成における熱処理の効果2009

    • Author(s)
      渡慶次高也, 山内徹也, 高良朝一郎, 山里将朗, 大野良一, 比嘉晃
    • Organizer
      応用物理学会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
  • [Presentation] CdTe(111)Cd面およびTe面上へのAlショットキー電極形成における硫黄処理の効果(II)2009

    • Author(s)
      山内徹也, 高良朝一郎, 山里将朗, 大野良一, 比嘉晃
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-04-01
  • [Presentation] テルル化カドミウム結晶上へのTiショットキー電極の形成(II)2009

    • Author(s)
      高良朝一郎, 山里将朗, 大野良一, 比嘉晃
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-04-01
  • [Remarks] ホームページ等

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Published: 2012-02-13   Modified: 2016-04-21  

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