2010 Fiscal Year Final Research Report
Formation of magnetic quantum wells based on oxide semiconductors and observation of magneto-optical effects
| Project/Area Number |
21760230
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Tokyo |
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Principal Investigator |
MATSUI Hiroaki The University of Tokyo, 大学院・工学系研究科, 助教 (80397752)
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| Project Period (FY) |
2009 – 2010
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| Keywords | 磁気光学 / 量子井戸 / 円偏光性 / 酸化亜鉛 / ヘテロ界面 |
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| Research Abstract |
This study focuses on development of magneto-optical materials based on a quantum well structure. We fabricated ZnCoO/ZnO quantum wells with spatial separation between magnetic ions and excitons. ZnO and ZnCoO were used as well and barrier layers, respectively. ZnCoO acts as a quantum barrier for ZnO and shows large s,p-d exchange interaction. Furthermore, band offset between ZnCoO and ZnO was determined as 160 meV, as measured by x-ray photo-emission spectroscopy. From x-ray diffraction, we confirmed high crystallinity of ZnCoO/ZnO superlattices. Finally, we observed a spin-related Zeeman splitting at the band edge of the quantum wells. However, excitonic emissions from the quantum wells were suppressed because of charge-transfer excitation in a Co ion.
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Research Products
(14 results)
