Compound semiconductor/silicon hybrid photonic crystal lasers

2010 Fiscal Year Final Research Report

• Project/Area Number: 21860017
• Research Category: Grant-in-Aid for Research Activity Start-up
• Allocation Type: Single-year Grants
• Research Field: Electron device/Electronic equipment
• Research Institution: The University of Tokyo
• Principal Investigator: TANABE Katsuaki The University of Tokyo, ナノ量子情報エレクトロニクス研究機構, 特任助教 (60548650)
• Project Period (FY): 2009 – 2010
• Keywords: 量子ドット / 半導体レーザ / シリコンフォトニクス / ウェハ貼り合わせ

Research Abstract

We have demonstrated the world's first electrically pumped telecommunication-band quantum dot laser on a silicon substrate as a basis of photonic integrated circuits for next-generation low-power-consumption, high-speed computation and communication. We have also revealed the function of the metal thin film mediating the compound semiconductor quantum dot layer and the silicon substrate not only to enhance interfacial mechanical stability and electrical conductivity but also to suppress optical leakage from the laser cavity into the silicon substrate through electromagnetic calculations.

Research Products

• [Journal Article] Novel III-V/Si hybrid laser structures with current injection across conductive wafer-bonded heterointerfaces : A proposal and analysis (2011)
  • Author(s): K.Tanabe, S.Iwamoto, Y.Arakawa
  • Journal Title: IEICE Electron.Express 8(8) Pages: 596
  • Peer Reviewed
• [Journal Article] Fabrication of electrically pumped InAs/GaAs quantum dot lasers on Si substrates by Au-mediated wafer bonding (2011)
  • Author(s): K.Tanabe, D.Guimard, D.Bordel, S.Iwamoto, Y.Arakawa
  • Journal Title: Phys.Stat.Sol.C 8(2) Pages: 319
  • Peer Reviewed
• [Journal Article] Design, fabrication and optical characterization of GaAs photonic crystal nanocavity lasers with InAs quantum dots gain wafer-bonded onto Si substrates (2010)
  • Author(s): K.Tanabe, M.Nomura, D.Guimard, S.Iwamoto, Y.Arakawa
  • Journal Title: Physica E 42(10) Pages: 2560
  • Peer Reviewed
• [Journal Article] Electrically pumped 1.3 um room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer (2010)
  • Author(s): K.Tanabe, D.Guimard, D.Bordel, S.Iwamoto, Y.Arakawa
  • Journal Title: Opt.Express 18(10) Pages: 10604
  • Peer Reviewed
• [Presentation] 接合界面に金属ストライプを用いたIII-V/Siハイブリッドレーザの提案と設計 (2011)
  • Author(s): 田辺克明,岩本敏,荒川泰彦
  • Organizer: 第58回応用物理学関係連合講演会, 26p-KB-11
  • Place of Presentation: 厚木
  • Year and Date: 2011-03-26
• [Presentation] ウェハ融着によるSi基板上1.3um InAs/GaAs (2010)
  • Author(s): 田辺克明,D.Guimard,D.Bordel,岩本敏,荒川泰彦
  • Organizer: 量子ドットレーザ電子情報通信学会 レーザ・量子エレクトロニクス研究会(LQE) 8月研究会, 34, 千歳(信学技報 110 (181), 153-156, 2010)
  • Year and Date: 2010-08-27
• [Presentation] Fabrication of Electrically Pumped InAs/GaAs Quantum Dot Lasers on Si Substrates by Au-Mediated Wafer Bonding (2010)
  • Author(s): K.Tanabe, D.Guimard, D.Bordel, S.Iwamoto, Y.Arakawa
  • Organizer: 37th International Symposium on Compound Semiconductors (ISCS)
  • Place of Presentation: Takamatsu, WeE3-1
  • Year and Date: 2010-06-02
• [Presentation] Room temperature operation of 1.3um InAs/GaAs quantum dot lasers wafer-bonded onto Si substrates (2010)
  • Author(s): K.Tanabe,, D.Guimard, D.Bordel, S.Iwamoto, Y.Arakawa
  • Organizer: 6th International Conference on Quantum Dots (QD 2010)
  • Place of Presentation: Nottingham, UK, P-28
  • Year and Date: 2010-04-30
• [Presentation] ウェハ融着によるSi基板上の電流注入型InAs/GaAs量子ドットレーザ (2010)
  • Author(s): 田辺克明,D.Guimard,D.Bordel,岩本敏,荒川泰彦
  • Organizer: 第57回応用物理学関係連合講演会,17p-P3-12
  • Place of Presentation: 平塚
  • Year and Date: 2010-03-17
• [Presentation] Photonic crystal nanocavity lasers with InAs quantum dots bonded onto silicon substrates (2009)
  • Author(s): K.Tanabe,, M.Nomura, D.Guimard, S.Iwamoto, Y.Arakawa
  • Organizer: 8th Pacific Rim Conference on Lasers and Electro-Optics (CLEO/Pacific Rim)
  • Place of Presentation: Shanghai, China, MH2-4
  • Year and Date: 2009-08-31
• [Presentation] Fabrication and optical characterization of photonic crystal nanocavities with InAs quantum dots bonded on silicon substrates (2009)
  • Author(s): K.Tanabe,, M.Nomura, D.Guimard, S.Iwamoto, Y. Arakawa
  • Organizer: 14th International Conference on Modulated Semiconductor Structures (MSS-14)
  • Place of Presentation: Kobe, Tu-mP35
  • Year and Date: 2009-07-21
• [Book] 光アライアン(シリコン上1.3μm量子ドットレーザ-光LSI融合システム構築に向けて- 2月号 (Optical Alliance 22(2), 2011)) (2011)
  • Author(s): 田辺克明,荒川泰彦
  • Total Pages: 43-46
  • Publisher: 日本工業出版(invited)
• [Remarks] 「東京大学、Si基板上に作製した量子ドットレーザの室温発振に成功」OPTRONICS2010年7月号NEWSFLASH
• [Remarks] 「レーザー シリコン上で発光 東大が微小構造開発LSI省電力に道」日本経済新聞2010年5月31日付11面
• [Remarks] 「量子ドットレーザー シリコン上で実用性能 東大LSI内光配線向け」日刊工業新聞2010年5月31日付22面
• [Remarks] 「LSI 消費電力100分の1東大がレーザー素子」日経産業新聞2010年5月31日付12面