2010 Fiscal Year Final Research Report
Compound semiconductor/silicon hybrid photonic crystal lasers
Project/Area Number |
21860017
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Research Category |
Grant-in-Aid for Research Activity Start-up
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Allocation Type | Single-year Grants |
Research Field |
Electron device/Electronic equipment
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Research Institution | The University of Tokyo |
Principal Investigator |
TANABE Katsuaki The University of Tokyo, ナノ量子情報エレクトロニクス研究機構, 特任助教 (60548650)
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Project Period (FY) |
2009 – 2010
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Keywords | 量子ドット / 半導体レーザ / シリコンフォトニクス / ウェハ貼り合わせ |
Research Abstract |
We have demonstrated the world's first electrically pumped telecommunication-band quantum dot laser on a silicon substrate as a basis of photonic integrated circuits for next-generation low-power-consumption, high-speed computation and communication. We have also revealed the function of the metal thin film mediating the compound semiconductor quantum dot layer and the silicon substrate not only to enhance interfacial mechanical stability and electrical conductivity but also to suppress optical leakage from the laser cavity into the silicon substrate through electromagnetic calculations.
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Research Products
(16 results)
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[Remarks] 「東京大学、Si基板上に作製した量子ドットレーザの室温発振に成功」OPTRONICS2010年7月号NEWSFLASH
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[Remarks] 「レーザー シリコン上で発光 東大が微小構造開発LSI省電力に道」日本経済新聞2010年5月31日付11面
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[Remarks] 「量子ドットレーザー シリコン上で実用性能 東大LSI内光配線向け」日刊工業新聞2010年5月31日付22面
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[Remarks] 「LSI 消費電力100分の1東大がレーザー素子」日経産業新聞2010年5月31日付12面