Development of zero TCR film using semiconductor-metal transition

2022 Fiscal Year Final Research Report

• Project/Area Number: 21K18805
• Research Category: Grant-in-Aid for Challenging Research (Exploratory)
• Allocation Type: Multi-year Fund
• Review Section: Medium-sized Section 26:Materials engineering and related fields
• Research Institution: Tohoku University
• Principal Investigator: Sutou Yuji 東北大学, 工学研究科, 教授 (80375196)
• Project Period (FY): 2021-07-09 – 2023-03-31
• Keywords: 抵抗の温度係数 / 相制御 / 比抵抗 / カルコゲナイド薄膜 / 高比抵抗合金

Outline of Final Research Achievements

In order to enhance the performance, safety, and energy efficiency of various electronic devices, it is essential to improve the precision of resistors that support to operate and control the devices. In this study, through phase control and phase interface control of materials, we attempted to realize unique materials that does not exhibit the change in electrical resistance depending on temperature (i.e., temperature coefficient in resistance: TCR). As a result, it was found that an extremely low TCR can be achieved by controlling the fractions of semiconductor-like crystalline-phase and metallic crystalline-phase in the phase-change chalcogenide thin film. Furthermore, in Fe-Cr-Al-Co alloys, it was found that a disordered A2 + ordered B2 two-phase separation microstructure can achieve high resistivity and low TCR.

Free Research Field

材料工学

Academic Significance and Societal Importance of the Research Achievements

半導体相変化型薄膜や高比抵抗合金といった様々な材料の相および相界面の制御により、材料自身の抵抗の温度依存性を極限まで低減するための組織設計指針を示した本成果の学術的及び工業的な意義は高い。本研究において得られた、高比抵抗かつ極めて小さなＴＣＲを示す実現する相変化型カルコゲナイド薄膜やＦｅ―Ｃｒ－Ａｌ－Ｃｏ系合金は、様々な抵抗器の更なる信頼性向上の実現を期待させるものであり、本研究で得られた成果は社会的にも意義深いと考えられる。