Sensitive optical sensors using amorphous oxide semiconductors

2022 Fiscal Year Final Research Report

• Project/Area Number: 21K18814
• Research Category: Grant-in-Aid for Challenging Research (Exploratory)
• Allocation Type: Multi-year Fund
• Review Section: Medium-sized Section 26:Materials engineering and related fields
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: Ide Keisuke 東京工業大学, 元素戦略MDX研究センター, 助教 (70752799)
• Project Period (FY): 2021-07-09 – 2023-03-31
• Keywords: アモルファス酸化物半導体 / ショットキーバリアダイオード / フォトダイオード

Outline of Final Research Achievements

Amorphous oxide semiconductors (AOS), such as amorphous In-Ga-Zn-O (a-IGZO), are known to have good semiconductor properties even fabricated at room temperature. We previously demonstrated that ultra-wide-gap amorphous semiconductors exceeding 4 eV can be fabricated at room temperature using gallium oxide. In a recent study, we have also succeeded in fabricating novel light-emitting diodes using ultra-wide-gap AOS. In this study, the a-GaO diodes were extended to fabricate high-voltage diodes and their photoresponsive characteristics were evaluated. AOS-based diodes with breakdown voltages exceeding -20V were realized, and quantum efficiencies exceeding 100 were observed.

Free Research Field

アモルファス酸化物半導体

Academic Significance and Societal Importance of the Research Achievements

本研究で高い量子効率の光センサをアモルファス半導体でも実現できることを示した。アモルファス半導体は、大面積に作ることが容易であるため、例えば超高感度なフラットパネルディテクタの実現につながる可能性がある。またメカニズムの詳細な検討から、さらに理想的なデバイスを作る指針も得ており学術的な意義のある研究となった。