Design of Electronic Properties and Development of High-Mobility Channel Technology for Low Power/High-Speed Nano-CMOS Devices

2013 Fiscal Year Final Research Report

• Project/Area Number: 22000011
• Research Category: Grant-in-Aid for Specially Promoted Research
• Allocation Type: Single-year Grants
• Review Section: Science and Engineering; Engineering
• Research Institution: Nagoya University
• Principal Investigator: ZAIMA Shigeaki 名古屋大学, 工学研究科, 教授 (70158947)
• Co-Investigator(Kenkyū-buntansha): TAKENAKA Mitsuru (20451792) ; SAKASHITA Mitsuo (30225792) ; TANAKA Nobuo (40126876) ; TAKEUCHI Wakana (90569386)
• Co-Investigator(Renkei-kenkyūsha): NAKATSUKA Osamu (20334998) ; TAKAGI Shinichi (30372402)
• Project Period (FY): 2010 – 2013
• Keywords: ゲルマニウム / 錫 / 歪 / エピタキシャル成長 / CMOS / 表面・界面

Research Abstract

We have investigated the crystal growth and electronic properties of strained Ge and GeSn epitaxial layers for realizing low power and high speed CMOS devices. We achieved the growth of very high Sn content GeSn growth and the reduction of defect density in GeSn epitaxial layers by substrate design, low temperature growth, and strain engineering. We also developed engineering technology of point defects, carrier properties, and MOS interface for GeSn materials. In addition, we demonstrated the fabrication of GOI and SGOI wafers and the improvement on the carrier mobility in those layers.

Research Products

• [Journal Article] Importance of Control of Oxidant Partial Pressure on Structural and Electrical Properties of Pr-oxide Films (2014)
  • Author(s): K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
  • Journal Title: Thin Solid Films Volume: 30 Pages: 276-281
  • DOI: DOI:10.1016/j.tsf.2013.10.088
  • Peer Reviewed
• [Journal Article] Impact of plasma postoxidation temperature on the electrical properties of Al_2O_3/GeO_x/Ge pMOSFETs and nMOSFETs (2014)
  • Author(s): R. Zhang, J.-C. Lin, X. Yu, M. Takenaka, and S. Takagi
  • Journal Title: IEEE Trans. Electron Dev Volume: 61 Pages: 416-422
  • DOI: DOI:10.1109/TED.2013.2295822
  • Peer Reviewed
• [Journal Article] Development of epitaxial growth technology for Ge_<1-x>Sn_x alloy and study of its properties for Ge nanoelectronics (2013)
  • Author(s): O. Nakatsuka, Y. Shimura, W. Takeuchi, N. Taoka, and S. Zaima
  • Journal Title: Solid-State Electron Volume: 83 Pages: 82-86
  • DOI: DOI:10.1016/j.sse.2013.01.040
  • Peer Reviewed
• [Journal Article] Technology Evolution for Silicon Nanoelectronics : Postscaling Technology (2013)
  • Author(s): S. Zaima
  • Journal Title: Jpn. J. Appl. Phys Volume: 52 Pages: 030001
  • DOI: DOI:10.7567/JJAP.52.030001
  • Peer Reviewed
• [Journal Article] Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al2O3/Ge structure (2013)
  • Author(s): S. Shibayama, K. Kato, M. Sakashita, W. Takeuchi, N. Taoka, O. Nakatsuka, and S. Zaima
  • Journal Title: Appl. Phys. Lett Volume: 103 Pages: 082114
  • DOI: DOI:10.1063/1.4819127
  • Peer Reviewed
• [Journal Article] Heteroepitaxial Growth of Sn-Related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications : Challenges and Opportunities (2013)
  • Author(s): O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, M. Sakashita, and S. Zaima
  • Journal Title: ECS Trans Volume: 58 Pages: 149-155
  • DOI: DOI:10.1149/05809.0149ecst
  • Peer Reviewed
• [Journal Article] Improvement of the precision of lattice parameter determination by nano-beam electron diffraction (2013)
  • Author(s): K. Saitoh, H. Nakahara, and N. Tanaka
  • Journal Title: Microscopy Volume: 62 Pages: 533-539
  • DOI: DOI:10.1093/jmicro/dft023
  • Peer Reviewed
• [Journal Article] Growth of Ge_<1-x>Sn_x heteroepitaxial layers with very high Sn contents on InP(001) substrates (2012)
  • Author(s): M. Nakamura, Y. Shimura, S. Takeuchi, O. Nakatsuka, and S. Zaima
  • Journal Title: Thin Solid Films Volume: 520 Pages: 3201-3205
  • DOI: DOI:10.1016/j.tsf.2011.10.153
  • Peer Reviewed
• [Journal Article] Low temperature formation of Si_<1-x-y>Ge_xSn_y-on-insulator structures by using solid-phase mixing of Ge_<1-z>Sn_z/Si-on-insulator substrates (2012)
  • Author(s): O. Nakatsuka, K. Mochizuki, Y. Shimura, T. Yamaha, and S. Zaima
  • Journal Title: Thin Solid Films Volume: 520 Pages: 3288-3292
  • DOI: DOI:10.1016/j.tsf.2011.10.120
  • Peer Reviewed
• [Journal Article] GeSn Technology : Impact of Sn on Ge CMOS Applications (2011)
  • Author(s): S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi, B. Vincent, F. Gencarelli, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, M. Caymax, and R. Loo
  • Journal Title: ECS Trans Volume: 41 Pages: 231-238
  • DOI: DOI:10.1149/1.3633303
  • Peer Reviewed
• [Presentation] Development of Ge_<1-x>Sn_x and Ge_<1-x-y>Si_xSn_y Thin Film Materials for Future Electronic Applications (2013)
  • Author(s): O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, K. Kato, W. Takeuchi, M. Sakashita, and S. Zaima
  • Organizer: International Conference on THERMEC'2013
  • Place of Presentation: Las Vegas, USA(招待講演)
  • Year and Date: 20131202-06
• [Presentation] Heteroepitaxial Growth of Sn-Related Group-IV Materials on Si Platform for Microelectronic and Optoelectronic Applications : Challenges and Opportunities (2013)
  • Author(s): O. Nakatsuka, N. Taoka, T. Asano, T. Yamaha, M. Kurosawa, M. Sakashita, S. Zaima
  • Organizer: 224th The Electrochemical Society (ECS) Meeting
  • Place of Presentation: San Francisco, USA(招待講演)
  • Year and Date: 20131027-1101
• [Presentation] MOS interface engineering for high-mobility Ge CMOS (2013)
  • Author(s): M. Takenaka, R. Zhang, S. Takagi
  • Organizer: IEEE International Reliability Physics Symposium (IRPS'13)
  • Place of Presentation: Monterey, USA(招待講演)
  • Year and Date: 2013-04-17
• [Presentation] Growth and Optical Properties of Ge_<1-x>Sn_x Alloy Thin Films with a High Sn Content (2012)
  • Author(s): S. Zaima, O. Nakatsuka, M. Nakamura, W. Takeuchi, Y. Shimura, and N. Taoka
  • Organizer: The PRiME 2012 Joint International (222nd) ECS Meeting
  • Place of Presentation: Honolulu, USA(招待講演)
  • Year and Date: 20121008-12
• [Presentation] Potential of GeSn Alloys for Application to Si Nanoelectronics (2012)
  • Author(s): S. Zaima, Y. Shimura, M. Nakamura, W. Takeuchi, M. Sakashita, O. Nakatsuka
  • Organizer: 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2012)
  • Place of Presentation: Naha, Japan(招待講演)
  • Year and Date: 20120627-29
• [Presentation] Material properties and applications of Ge_<1-x>Sn_x alloys for Ge Nanoelectronics (2012)
  • Author(s): O. Nakatsuka, Y. Shimura, W. Takeuchi, and S. Zaima
  • Organizer: The 6th International SiGe Technology and Device Meeting (ISTDM2012), No. 12.1
  • Place of Presentation: Barkeley, USA(招待講演)
  • Year and Date: 20120604-06
• [Presentation] Materials Innovation in Si Nanoelectronics (2011)
  • Author(s): S. Zaima and O. Nakatsuka
  • Organizer: 2011 Tsukuba Nanotechnology Symposium (TNS'11)
  • Place of Presentation: Tsukuba, Japan(招待講演)
  • Year and Date: 20111215-17
• [Presentation] GeSn Technology : Impact of Sn on Ge CMOS Applications (2011)
  • Author(s): S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi, B. Vincent, F. Gencarelli, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, M. Caymax, and R. Loo
  • Organizer: 220th Electro Chemical Society Meeting
  • Place of Presentation: Boston, USA(招待講演)
  • Year and Date: 20111009-14
• [Presentation] Tensile-Strained Ge and Ge_<1-x.>Sn_x Layers for High-Mobility Channels in Future CMOS Devices (2010)
  • Author(s): S. Zaima, O. Nakatsuka, Y. Shimura, S. Takeuchi
  • Organizer: International Conference on Solid-State and Integrated Circuit Technology
  • Place of Presentation: Shanghai, China(招待講演)
  • Year and Date: 20101101-04
• [Presentation] Assessment of Ge_<1-x>Sn_x Alloys for Strained Ge CMOS Devices (2010)
  • Author(s): S. Takeuchi, Y. Shimura, T. Nishimura, B. Vincent, G. Eneman, T. Clarysse, J. Demeulemeester, K. Temst, A. Vantomme, J. Dekoster, M. Caymax, R. Loo, O. Nakatsuka, A. Sakai, and S. Zaima
  • Organizer: 218th ECS Meeting
  • Place of Presentation: Las Vegas, USA(招待講演)
  • Year and Date: 20101010-15
• [Book] ポストシリコン半導体-ナノ成膜ダイナミクスと基板・界面効果- (2013)
  • Author(s): 財満鎭明、中塚理、高木信一(全執筆者57名)
  • Total Pages: 510(3-11,160-167)
  • Publisher: 株式会社エヌ・ティー・エヌ
• [Remarks] 科学研究費・特別推進研究ウェブサイト
  • URL: http://alice.xtal.nagoya-u.ac.jp/nano_cmos/index.html
• [Remarks] 財満研究室ウェブサイト
  • URL: http://alice.xtal.nagoya-u.ac.jp/zaimalab/
• [Remarks] 財満鎭明,日本表面科学会・フェロー, 2011年5月23日.
• [Remarks] 財満鎭明,第35回応用物理学会論文賞,解説論文『ポストスケーリング技術の現状と期待される新展開』,2013年9月16日.
• [Patent(Industrial Property Rights)] 多層膜構造体及びその形成方法 (2011)
  • Inventor(s): 中塚理、財満鎭明、望月健太、志村洋介
  • Industrial Property Rights Holder: 国立大学法人名古屋大学
  • Industrial Property Number: 特許, 特許公開2012-244069
  • Filing Date: 2011-05-23