Creation of spin devices based on relativistic effects

2014 Fiscal Year Final Research Report

• Project/Area Number: 22226001
• Research Category: Grant-in-Aid for Scientific Research (S)
• Allocation Type: Single-year Grants
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Tohoku University
• Principal Investigator: NITTA Junsaku 東北大学, 工学(系)研究科(研究院), 教授 (00393778)
• Co-Investigator(Kenkyū-buntansha): TEZUKA Nobuki 東北大学, 大学院工学研究科, 教授 (40323076) ; KOHDA Makoto 東北大学, 大学院工学研究科, 教授 (00420000)
• Project Period (FY): 2010-04-01 – 2015-03-31
• Keywords: スピン軌道相互作用 / スピン生成 / スピン制御 / スピン検出

Outline of Final Research Achievements

Spatially local and high speed manipulations of electron spins are difficult with a magnetic field. Electron spins moving in an electric field feel a magnetic field because of a relativistic spin-orbit interaction. We succeeded in electrical spin generation, manipulation, and detection by using spin-orbit interaction at semiconductor heterostructures without using a magnetic field. Furthermore, we established a novel concept to determine the strength of two different spin-orbit interactions and realized a gate-controlled persistent spin helix state where the spin relaxation is suppressed. These results pave a way for future low power-consumption spintronic devices.

Free Research Field

スピントロニクス