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2012 Fiscal Year Final Research Report

Controlling of local electro-mechanical properties of few-layer graphen

Research Project

  • PDF
Project/Area Number 22310086
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Microdevices/Nanodevices
Research InstitutionThe University of Tokushima

Principal Investigator

NAGASE Masao  徳島大学, 大学院・ソシオテクノサイエンス研究部, 教授 (20393762)

Co-Investigator(Kenkyū-buntansha) SEKINE Yoshiaki  日本電信電話株式会社 NTT 物性科学基礎研究所, 量子電子物性研究, 社員 (70393783)
KAGASHIMA Hiroyuki  日本電信電話株式会社 NTT 物性科学基礎研究所, 量子電子物性研究部, 主任研究員 (70374072)
YAMAGUCHI Hiroshi  日本電信電話株式会社 NTT 物性科学基礎研究所, 量子電子物性研究部, 上席特別研究員 (60374071)
OKAMOTO Hajime  日本電信電話株式会社 NTT 物性科学基礎研究所, 量子電子物性研究部, 研究主任 (20350465)
HIBINO Hiroki  日本電信電話株式会社 NTT 物性科学基礎研究所, 機能物質科学研究部, 部長 (60393740)
Project Period (FY) 2010 – 2012
Keywordsナノ材料 / マイクロ・ナノデバイス / 計測工学 / グラフェン
Research Abstract

Electrical and mechanical combined properties of graphene on SiC were studied in nano-scale regime. We found the current switching phenomena with very high-on/off ratio (>105) by using a conductive scanning nano-probe. The contact conductance between the probe and graphene can be modulated by a mechanical interaction which makes partially defined graphene nano-membrane. Our findings open a path to applications of electro-mechanical properties of graphene.

  • Research Products

    (19 results)

All 2013 2012 2011 2010 Other

All Journal Article (16 results) (of which Peer Reviewed: 16 results) Book (2 results) Remarks (1 results)

  • [Journal Article] Graphene-Based Nano-Electro-Mechanical Switch with High On/Off Ratio2013

    • Author(s)
      M. Nagase, H. Hibino, H. Kageshima, H. Yamaguchi
    • Journal Title

      Appl. Phys. Expres

      Volume: 6 Pages: 055101.

    • DOI

      DOI:10.7567/APEX.6.055101

    • Peer Reviewed
  • [Journal Article]2012

    • Author(s)
      R. O, A. Iwamoto, Y. Nishi, Y. Funase, T. Yuasa, T. Tomita, M. Nagase, H. Hibino, H. Yamaguchi
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 51 Pages: 06FD06.

    • DOI

      DOI:10.1143/JJAP.51.06FD06

    • Peer Reviewed
  • [Journal Article] The physics of epitaxial graphene on SiC(0001)2012

    • Author(s)
      H. Kageshima, H. Hibino, S. Tanabe
    • Journal Title

      J. Phys.: Condens. Matter

      Volume: 24 Pages: 314215.

    • DOI

      DOI:10.1088/0953-8984/24/31/314215

    • Peer Reviewed
  • [Journal Article] Growth and electronic transport properties of epitaxial graphene on SiC2012

    • Author(s)
      H. Hibino, S. Tanabe, S. Mizuno and H. Kageshima
    • Journal Title

      J. Phys. D:Appl. Phys

      Volume: 45 Pages: 154008.

    • DOI

      DOI:10.1088/0022-3727/45/15/154008

    • Peer Reviewed
  • [Journal Article] Atomic structure of epitaxial graphene islands on SiC(0001) surfaces and their magnetoelectric effects2011

    • Author(s)
      H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, H. Yamaguchi
    • Journal Title

      AIP Conference Proceedings

      Volume: 1399 Pages: 755-756

    • DOI

      DOI: 10.1063/1.3666596

    • Peer Reviewed
  • [Journal Article] Carrier transport mechanism in graphene on SiC(0001)2011

    • Author(s)
      H. Kageshima, H. Hibino, H. Yamaguchi, and M. Nagase
    • Journal Title

      Phys. Rev. B

      Volume: 84 Pages: 115458

    • DOI

      DOI: 10.1103/PhysRevB.84.115458

    • Peer Reviewed
  • [Journal Article] Theoretical Study on Epitaxial Graphene Growth by Si Sublimation from SiC(0001) Surface2011

    • Author(s)
      H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, H. Yamaguchi
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 50 Pages: 095601

    • DOI

      DOI:10.1143/JJAP.50.070115

    • Peer Reviewed
  • [Journal Article] Theoretical Study on Magnetoelectric and Thermoelectric Properties for Graphene Devices2011

    • Author(s)
      H. Kageshima, H. Hibino, M. Nagase, Y. Sekine, H. Yamaguchi
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 50 Pages: 070115

    • DOI

      DOI:10.1143/JJAP.50.070115

    • Peer Reviewed
  • [Journal Article] Observation of bandgap in epitaxial bilayer graphene field effect transistors2011

    • Author(s)
      S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, H. Hibino
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 50 Pages: 04DN04.

    • DOI

      DOI:10.1143/JJAP.50.04DN04

    • Peer Reviewed
  • [Journal Article] Electronic transport properties of top-gated monolayer and bilayer graphene devices on Si2011

    • Author(s)
      S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, H. Hibino
    • Journal Title

      Mater. Res. Soc. Symp. Proc

      Volume: 1283 Pages: 675-680.

    • DOI

      DOI:10.1557/opl.2011.675

    • Peer Reviewed
  • [Journal Article] Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces2010

    • Author(s)
      H. Kageshima, H. Hibino, M. Nagase, Y.Sekine, and H. Yamaguchi
    • Journal Title

      Appl. Phys. Express

      Volume: 3 Pages: 115103.

    • DOI

      DOI:10.1143/APEX.3.11510

    • Peer Reviewed
  • [Journal Article] Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices2010

    • Author(s)
      S. Tanabe, Y. Sekine, H. Kageshima, M. Nagase, H. Hibino
    • Journal Title

      Appl. Phys. Express

      Volume: 3 Pages: 075102.

    • DOI

      DOI:10.1143/APEX.3.075102

    • Peer Reviewed
  • [Journal Article] Study on Thermoelectric Properties of Graphene2010

    • Author(s)
      H. Kageshima
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 49 Pages: 100207.

    • DOI

      DOI:10.1143/JJAP.49.100207

    • Peer Reviewed
  • [Journal Article] Direct Actuation of GaAs Membrane Resonator by Scanning Probe2010

    • Author(s)
      M. Nagase, K. Tamaru, K. Nonaka, S. Warisawa, S. Ishihara, H. Yamaguchi
    • Journal Title

      NTT Technical Rev

      Volume: 8 Pages: 1-7.

    • Peer Reviewed
  • [Journal Article] SiC 上エピタキシャルグラフェン成長の理論検討2010

    • Author(s)
      影島博之, 日比野浩樹, 永瀬雅夫, 山口浩司
    • Journal Title

      日本結晶成長学会誌

      Volume: 37 Pages: 190-195

    • Peer Reviewed
  • [Journal Article] SiC 上エピタキシャルグラフェンの成長と評価2010

    • Author(s)
      日比野浩樹, 影島博之, 田邉真一, 永瀬雅夫
    • Journal Title

      固体物理

      Volume: 45 Pages: 645-655

    • Peer Reviewed
  • [Book] エヌテーエス、グラフェンが拓く材料の新領域 -物性・作製法から実用化まで-2012

    • Author(s)
      瀬雅夫
    • Total Pages
      90-98
    • Publisher
      日比野浩樹
  • [Book] ノカーボンの応用と実用化 フラーレン,ナノチューブ,グラフェンを中心に2011

    • Author(s)
      永瀬雅夫
    • Total Pages
      174-184
    • Publisher
      シーエムシー出版
  • [Remarks]

    • URL

      http://graphene.ee.tokushima-u.ac.jp/

URL: 

Published: 2014-08-29  

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