2012 Fiscal Year Final Research Report
Creation of β diketonate metal complex controlled chemical composition and structure and application to thin film device using it for starting materials
| Project/Area Number |
22360132
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Sendai National College of Technology |
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Principal Investigator |
HAGA Koichi 仙台高等専門学校, 地域イノベーションセンター, 教授 (30270200)
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| Co-Investigator(Kenkyū-buntansha) |
SHISHIDO Toetsu 東北大学, 金属材料研究所, 研究推進研究員 (50125580)
YUBUTA Kunio 東北大学, 金属材料研究所・金属ガラス総合研究センター, 准教授 (00302208)
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| Project Period (FY) |
2010 – 2012
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| Keywords | 作成・評価技術 / ファイバー状金属錯体原料 |
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| Research Abstract |
The β diketonate metal complex of the fiber shape to control the structure and the chemical composition was created by a novel process without the case in the past, and the metal complex was used for the starting material of metalorganic chemical vapor deposition (MO-CVD). The high quality zinc oxide thin film that was not able to be accomplished by the commercially available metal complex was able to be obtained by using this starting material. Moreover, the laser direct writing method was introduced into the TFT process, and ZnO film transistor (ZnO-TFT) was completed. Crystallographic axis and the crystalline quality in two-dimensional based on the process of ZnO film were able to be obtained and to obtain the controlled a-axis oriented ZnO film. ZnO-TFT was not able to be accomplished in the period of this research using the a-axis oriented ZnO film.
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