Crystal orientation dependence of solution growth in InGaSb and InGaAs

2012 Fiscal Year Final Research Report

• Project/Area Number: 22360316
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Metal making engineering
• Research Institution: Japan Aerospace Exploration Agency
• Principal Investigator: INATOMI Yuko 独立行政法人宇宙航空研究開発機構, 宇宙科学研究所, 准教授 (50249934)
• Co-Investigator(Kenkyū-buntansha): HAYAKAWA Yasuhiro 静岡大学, 電子工学研究所, 教授 (00115453) ; KINOSHITA Kyoichi 独立行政法人 宇宙航空研究開発機構, 宇宙科学研究所, 主幹研究員 (10358749)
• Co-Investigator(Renkei-kenkyūsha): MUKANNAN Arivanandhan 静岡大学, 電子工学研究所, 助教 (50451620) ; SAKATA Kaoruho 独立行政法人 宇宙航空研究開発機構, 宇宙科学研究所, 任期付プロジェクト研究員 (80514215)
• Project Period (FY): 2010 – 2012
• Keywords: 結晶工学 / 結晶成長 / 応用光学 / 量子光工学 / 超精密計測 / 電子・電気材料

Research Abstract

InxGa1-xSb and InxGa1-xAs crystals were grown by a temperature gradient method. The morphological change of the growth interfaces, the growth rates, and the compositional distributions were measured by an in-situ observation method and a heat pulse method. Since an applied static magnetic field of 5.5 Tesla suppressed buoyancy convection in InGaSb melt, the indium composition of the grown InxGa1-xSb crystal was almost constant within fluctuation of 0.5 at%. In addition, it was found that growth rate and composition in the grown crystal showed an obvious crystal orientation dependence of InxGa1-xSb bulk crystal growth.

Research Products

• [Journal Article] Current Status of Alloy Semiconductor Crystal Growth Project under Microgravity (2012)
  • Author(s): Y. Inatomi, K. SAKATA, M. Arivanandhan, G. Rajesh, Y. Hayakawa, A. Tanaka, T. Ozawa, Y. Okano, T. Ishikawa, M. Takayanagi, S. Yoda, Y. Yoshimura
  • Journal Title: Transactions of the Japan Society for Aeronautical and Space Sciences, Aerospace Technology Japan Volume: 10 Pages: Th_1-Th_4
  • DOI: DOI: 10.2322/tastj.10.Th_1
  • Peer Reviewed
• [Journal Article] Bulk growth of InGaSb alloy semiconductor under terrestrial conditions: A Preliminary study for microgravity experiments at ISS (2011)
  • Author(s): M. Arivanandhan, G. Rajesh, A. Tanaka, T. Ozawa, Y. Okano, Y. Inatomi and Y. Hayakawa,
  • Journal Title: Defect and Diffusion Forum Volume: 323-325 Pages: 539-544
  • DOI: DOI:10.4028/www.scientific.net/DDF.323-325.539
  • Peer Reviewed
• [Journal Article] Crystal Growth of InGaSb Alloy Semiconductor at International Space Station: Preliminary Experiments (2011)
  • Author(s): M. Arivanandhan, G. Rajesh, T. Koyama, Y. Momose, K. Sankaranarayanan, A. Tanaka, Y. Hayakawa, T. Ozawa, Y. Okano and Y. Inatomi
  • Journal Title: Journal of the Japan Society of Microgravity Application Volume: 28 Pages: S46-S50.
  • URL: http://jairo.nii.ac.jp/0203/00050593/en
  • Peer Reviewed
• [Journal Article] Effects of Solutal Convection on the Dissolution of GaSb into InSb Melt and Solute Transport Mechanism in InGaSb Solution: Numerical Simulations and In-situ Oobservation Experiments (2011)
  • Author(s): G. Rajesh, M. Arivanandhan, N. Suzuki, A. Tanaka, H. Morii, T. Aoki, T. Koyama, Y. Momose, T. Ozawa, Y. Inatomi, Y. Takagi, Y. Okano and Y. Hayakawa
  • Journal Title: Journal of Crystal Growth Volume: 324 Pages: 157-162
  • DOI: DOI: 10.1016/j.jcrysgro.2011.04.019
  • Peer Reviewed
• [Journal Article] In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method (2010)
  • Author(s): G. Rajesh, M. Arivanandhan, H. Morii, T. Aoki, T. Koyama, Y. Momose, A. Tanaka, T. Ozawa, Y. Inatomi and Y. Hayakawa
  • Journal Title: Journal of Crystal Growth Volume: 312 Pages: 2677-2682
  • Peer Reviewed
• [Journal Article] Alloy Semiconductor Crystal Growth under Microgravity (2010)
  • Author(s): Y. Hayakawa, M. Arivanandhan, G. Rajesh, A. Tanaka, T. Ozawa, Y. Okano, K. Sankaranarayanan and Y. Inatomi
  • Journal Title: AIP conference proceedings Volume: CP1313 Pages: 45-49
  • DOI: DOI: 10.1063/1.3530565
  • Peer Reviewed
• [Presentation] 微小重力場でのInxGa1-xSb結晶成長解析に関する熱物性測定 (2013)
  • Author(s): 阪田薫穂, 向井碧, Govindasamy Rajesh, Mukannan Arivanandhan, 稲富裕光, 石川毅彦, 早川泰弘
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 20130327-30
• [Presentation] Microgravity study on the growth of semiconductors (2013)
  • Author(s): Y. Hayakawa, M. Arivanandhan, G. Rajesh, T. Koyama, Y. Momose, H. Morii, T. Aoki, Y. Takagi, Y. Okano, T. Ozawa, K. Sakata and Y. Inatomi
  • Organizer: The workshop on Characterization Techniques, Alagapa University, Karaikudi, India
  • Place of Presentation: Invited talk
  • Year and Date: 20130321-22
• [Presentation] Dissolution and Growth Processes of InGaSb Alloy Semiconductor under 1 G and Microgravity Conditions (2013)
  • Author(s): Y. Hayakawa, M. Arivanandhan, G. Rajesh, T. Koyama, Y. Momose, H. Morii, T. Aoki, Y. Takagi, Y. Okano, T. Ozawa, K. Sakata and Y. Inatomi
  • Organizer: International Conference on Nanoscience and Nanotechnology (ICONN 2013), SRM University, Chennai, India
  • Place of Presentation: Keynote talk
  • Year and Date: 20130318-20
• [Presentation] 国際宇宙ステーションでの多元系半導体InGaSb結晶成長実験に向けた熱物性測定 (2012)
  • Author(s): 阪田薫穂, 向井碧, Govindasamy Rajesh, Mukannan Arivanandhan, 稲富裕光, 石川毅彦, 早川泰弘
  • Organizer: 日本マイクログラビティ応用学会第26回学術講演会
  • Place of Presentation: 九州大学西新プラザ
  • Year and Date: 20121120-22
• [Presentation] InxGa1-xSb Crystal Growth Experiment under Microgravity (2012)
  • Author(s): J. Yu, Y. Inatomi, Y. Hayakawa, M. Arivanandhan, G. Rajesh, T. Koyama, Y. Momose, H. Morii, T. Aoki, A. Tanaka, Y. Okano, T. Ozawa, T. Ishikawa, S. Yoda, Y. Liu, and G. Zai
  • Organizer: 9th China-Japan-Korea Workshop on Microgravity Sciences, Guilin, China
  • Place of Presentation: Keynote lecture
  • Year and Date: 20121029-1102
• [Presentation] Effect of Gravity on InxGa1-xSb Alloy Semiconductor Growth (2012)
  • Author(s): Y. Hayakawa, M. Arivanandhan, G. Rajesh, T. Koyama, Y. Momose, H. Morii, T. Aoki, A. Tanaka, Y. Takagi, Y. Okano, T. Ozawa, K. Sakata and Y. Inatomi
  • Organizer: 9th China-Japan-Korea Workshop on Microgravity Sciences, Guilin, China
  • Place of Presentation: Guilin, China
  • Year and Date: 20121029-1102
• [Presentation] 国際宇宙ステーションでの結晶成長実験に関する溶融InxGa1-xSbの粘度測定 (2012)
  • Author(s): 阪田薫穂, 向井碧, Govindasamy Rajesh, Mukannan Arivanandhan, 稲富裕光, 石川毅彦, 早川泰弘,
  • Organizer: 第33回日本熱物性シンポジウム
  • Place of Presentation: 大阪府立大学
  • Year and Date: 20121003-05
• [Presentation] 溶融InGaSb 粘性率の温度および組成依存性 (2012)
  • Author(s): 向井碧, 宮田浩旭, 冨岡浩, 太田昌也, 阪田薫穂, 稲富裕光, 勝田真登, 村上敬司, 早川泰弘
  • Organizer: 日本鉄鋼協会第164回秋季講演大会
  • Place of Presentation: 愛媛大学, 愛媛県松山市
  • Year and Date: 20120917-19
• [Presentation] Current Status of Crystal Growth Experiment of InGaSb Alloy Semiconductor in ISS (2012)
  • Author(s): Yuko Inatomi, Kaoruho Sakata, Yasuhiro Hayakawa, Takehiko Ishikawa, Mukannan Arivanandhan, Govindasamy Rajesh, Tadanobu Koyama, Yoshimi Momose, Krishnasamy Sankaranarayanan, Akira Tanaka, Tetsuo Ozawa, Yasunori Okano, Masahiro Takayanagi, Shinichi Yoda, and Yoshinori Yoshimura
  • Organizer: 39th COSPAR Scientific Assembly (COSPAR-2012) in Mysore
  • Place of Presentation: Mysore, India
  • Year and Date: 20120714-22
• [Presentation] Microgravity experiments of InxGa1-xSb alloy semiconductor growth (2012)
  • Author(s): Y. Momose, M. Arivanandhan, T. Koyama, H. Morii, T. Aoki, A. Tanaka, Y. Okano, Y. Inatomi, and Y. Hayakawa
  • Organizer: International Conference on AdvancedMaterials, Science and Engineering (ICAMSE-12)
  • Place of Presentation: Colombo, Sri Lanka
  • Year and Date: 20120701-04
• [Presentation] Growth of InxGa1-xSb alloy semiconductor under terrestrial and microgravity conditions (2012)
  • Author(s): Colombo, Sri Lanka
  • Organizer: National Conference on Physics of New Materials (NCPNN-2012)
  • Place of Presentation: Noorul Islam University, Kanyakumari, Tamil Nadu, India (Invited speaker)
  • Year and Date: 20120420-21
• [Presentation] 混晶半導体バルク結晶の溶質輸送に対する重力効果 (2012)
  • Author(s): 早川泰弘, M. Arivanandhan, G.Rajesh, 小山忠信, 百瀬与志美, 森井久史, 青木 徹, 田中 昭, 岡野泰則, 高木洋平, 小澤哲夫, 阪田薫穂, 稲富裕光
  • Organizer: 第59回応用物理学関係連合講演会, 新領域グループ(重力場応用研究)シンポジウム, 15p-C3-8,
  • Place of Presentation: 早稲田大学, 東京都 (招待講演)
  • Year and Date: 2012-03-15
• [Presentation] 1G環境下における温度勾配炉を用いたInxGa1-xSb混晶半導体結晶成長 (2011)
  • Author(s): 早川泰弘, M. Arivanandhan, G. Rajesh, 田中 昭, 小澤哲夫, 岡野泰則, 阪田薫穂, 稲富裕光
  • Organizer: 日本マイクログラビティ応用学会第25回学術講演会
  • Place of Presentation: IHI横浜事業内ゲストハウス, 横浜市
  • Year and Date: 20111128-29
• [Presentation] Investigation of Solute Transport Mechanism in GaSb/InSb/GaSb Sandwich Structure under 1G and 10-4G Conditions by In-situ X-ray Penetration and Numerical Methods (2011)
  • Author(s): G. Rajesh, M. Arivanandhan, N. Suzuki, H. Morii, T. Aoki, T. Koyama, Y. Momose, A. Tanaka, Y. Takagi, Y. Okano, T. Ozawa, Y. Inatomi and Y. Hayakawa
  • Organizer: 第41回結晶成長国内会議, NCCG-41
  • Place of Presentation: つくば国際会議場, 茨城県つくば市
  • Year and Date: 20111103-05
• [Presentation] 高温粘性率測定装置による溶融InGaSbの粘性率測定 (2011)
  • Author(s): 向井碧, 宮田浩旭, 冨岡浩, 太田昌也, 稲富裕光, 和田里彦, 村上敬司
  • Organizer: 日本鉄鋼協会 第162回秋季講演大会
  • Place of Presentation: 大阪:大阪大学 吹田キャンパス
  • Year and Date: 20110920-22
• [Presentation] Investigation of Solute Transport Mechanism in In-Ga-Sb Solution byIn-situ X-ray Observation and Numerical Analysis (2011)
  • Author(s): G. Rajesh, M. Arivanandhan, N. Suzuki, H. Morii, T. Aoki, T. Koyama, Y. Momose, A. Tanaka, Y. Takagi, Y. Okano, T. Ozawa, Y. Inatomi and Y. Hayakawa
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学, 1a-P8-26.
  • Year and Date: 20110829-0902
• [Presentation] Bulk growth of InGaSb alloy semiconductor under terrestrial conditions: A Preliminary study for microgravity experiments at ISS (2011)
  • Author(s): M. Arivanandhan, G. Rajesh, A. Tanaka, T. Ozawa, Y. Okano, Y. Inatomi, and Y. Hayakawa
  • Organizer: 8th International Conference on Diffusion in Materials
  • Place of Presentation: Dijon, France
  • Year and Date: 20110703-08
• [Presentation] "Current Status of Alloy Semiconductor Crystal Growth Project under Microgravity (2011)
  • Author(s): Y. Inatomi, K. Sakata, M. Arivanandhan, G. Rajesh, Y. Hayakawa, A. Tanaka, T. Ozawa, Y. Okano, T. Ishikawa, M. Takayanagi, S. Yoda, and Y. Yoshimura
  • Organizer: The 28th International Symposium on Space Technology and Science (28th ISTS)
  • Place of Presentation: Okinawa Convention Center, in Ginowan City, Okinawa, Japan,
  • Year and Date: 20110605-12
• [Presentation] Crystal growth of alloy semiconductor under Microgravity ("Alloy semiconductor" project) (2011)
  • Author(s): Y. Inatomi, Y. Hayakawa, K. Sakata, M. Arivanandhan, G. Rajesh, A. Tanaka, T. Ozawa, Y. Okano, T. Ishikawa, M. Takayanag, S. Yoda, and Y. Yoshimura
  • Organizer: Increment 29/30 Science Symposium , JAXA
  • Place of Presentation: Tsukuba, Japan
  • Year and Date: 2011-06-08
• [Presentation] 混晶半導体バルク結晶成長に対する重力効果 (2011)
  • Author(s): 早川泰弘, M. Arivanandhan, G. Rajesh, 小山忠信, 百瀬与志美, 森井久史, 青木 徹, 田中 昭, 鈴木那津輝, 岡野泰則, 小澤哲夫, 稲富裕光
  • Organizer: "混晶半導体バルク結晶成長に対する重力効果", 第58回応用物理学関係連合講演会, 新領域グループ(重力場応用研究)シンポジウム, 25p-KM-9,
  • Place of Presentation: 神奈川工科大学, 神奈川県厚木市 (招待講演)
  • Year and Date: 2011-03-25
• [Presentation] X線画像検出器を用いた混晶半導体バルク結晶成長過程の観察 (2011)
  • Author(s): 早川泰弘, 田中 昭, 青木 徹, M. Arivanandhan, 小山忠信, 百瀬与志美, G. Rajesh, 森井久史, 小澤哲夫, 岡野泰則, 稲富裕光
  • Organizer: 静岡大学重点4分野 極限画像科学シンポジウム
  • Place of Presentation: 静岡大学, 静岡県浜松市
  • Year and Date: 2011-03-14
• [Presentation] Experimental and Numerical Investigation of the Dissolution Process of GaSb into InSb Melt (2010)
  • Author(s): G. Rajesh, M. Arivanandhan, H. Morii, N. Suzuki, T. Aoki, T. Koyama, Y. Momose, A. Tanaka, K. Sankaranarayanan, Y.Okano, T. Ozawa, Y. Inatomi and Y. Hayakawa
  • Organizer: 第17回応用物理学会東海支部基礎セミナー
  • Place of Presentation: (静岡大学) (静岡県浜松市) P-07.
  • Year and Date: 20101000
• [Presentation] Effect of gravity on the dissolution process of GaSb into InSb melt (2010)
  • Author(s): G. Rajesh, M. Arivanandhan, H. Morii, N. Suzuki, T. Aoki, T. Koyama, Y. Momose, A. Tanaka, K. Sankaranarayanan, Y. Okano, T. Ozawa, Y. Inatomi, and Y. Hayakawa
  • Organizer: 8th Japan-China-Korea Workshop, Microgravity Sciences for Asia Microgravity Pre-Symposium
  • Place of Presentation: Akiu, Sendai, Japan
  • Year and Date: 20100922-24
• [Presentation] Crystal growth of InGaSb alloy semiconductor at International Space Station: preliminary experiments (2010)
  • Author(s): M. Arivanandhan, G. Rajesh, T. Koyama, Y. Momose, K. Sankaranarayanan, A. Tanaka, Y. Hayakawa, T. Ozawa, Y. Okano and Y. Inatomi
  • Organizer: 8th Japan-China-Korea Workshop, Microgravity Sciences for Asia Microgravity Pre-Symposium
  • Place of Presentation: Akiu, Sendai, Japan
  • Year and Date: 20100922-24
• [Presentation] The Effect of Gravity on the Dissolution Process of GaSb into InSb Melt: Experiments and Simulations (2010)
  • Author(s): G. Rajesh, M. Arivanandhan, H. Morii, N. Suzuki, T. Aoki, T. Koyama, Y. Momose, A. Tanaka, K. Sankaranarayanan, Y. Okano, T. Ozawa, Y. Inatomi and Y. Hayakawa
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: (長崎大学) (長崎県長崎市) 14a-ZT-12.
  • Year and Date: 20100900
• [Presentation] Semiconductor alloy crystal growth under Microgravity (2010)
  • Author(s): Y. Hayakawa, M. Arivanandhan, G. Rajesh, A. Tanaka, T. Ozawa, Y. Okano, K. Sankaranarayanan and Y. Inatomi
  • Organizer: International Conference on Physics of Emerging Functional Materials IT-28
  • Place of Presentation: Mumbai, India(Invited speaker)
  • Year and Date: 2010-09-24
• [Remarks]
  • URL: http://repository.tksc.jaxa.jp/dr/sresult-jp?DEF_XSL=04&SUM_NUMBER=20&IS_KIND=Search&IS_SCH=META&IS_STYLE=jpn&DB_ID=G0000001AIREX&GRP_ID=G0000001&IS_DB=G0000001AIREX001&IS_TYPE=meta&IS_START=1&SUM_START=1&IS_TAG_S30=rectype&IS_KEY_S30=JAXA&IS_LGC_S30=AND&PAGE_KIND=advanced&SYS_TYPE=jaxa&IS_MAP_S1=dictionary&IS_TAG_S1=D072CC&IS_KEY_S1=%E5%AD%A6%E8%A1%93%E9%9B%91%E8%AA%8C%E8%AB%96%E6%96%87&IS_LGC_S2=AND&IS_TAG_S2=Author&IS_KEY_S2=%22%E7%A8%B2%E5%AF%8C%E3%80%80%E8%A3%95%E5%85%89%22&IS_NUMBER=20
• [Remarks]
  • URL: http://maruhan.rie.shizuoka.ac.jp/index-e.htm