2013 Fiscal Year Final Research Report
Anisotropy of subband structure of Si and Ge surface inversion layers and control of its physical properties by means of strain
| Project/Area Number |
22540332
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Condensed matter physics I
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| Research Institution | University of the Ryukyus |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
TAKEDA Sakura 奈良先端科学技術大学院大学, 物質創成科学研究科, 助教 (30314537)
柳澤 将 琉球大学, 理学部, 助教 (10403007)
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| Project Period (FY) |
2010-04-01 – 2014-03-31
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| Keywords | Si, Ge / バンド / 異方性 / 歪み / 表面反転層 / 表面・界面物性 / 半導体物性 |
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| Research Abstract |
Band anisotropy of Si and Ge and applied tensile or compressive strain with various orientations cooperate synergistically to change the band structure remarkably. As for the Si valence band, we have investigated the anisotropy of the bulk band or the surface subband induced by strain, and searched for those strain types which contribute to improve hole mobility. Furthermore, we have clarified the conspicuous effect of relative atom displacement of two atoms in the crystal unit cell (internal strain) on the band structure.
We have found the direction of uniaxial tensility and the plane orientation of biaxial tensility which cause the indirect-direct band-gap transition of Ge, and evaluated the strain magnitude where the transition occurs.
Observing the Si valence band by angle-resolved photoemission spectroscopy, we have found that biaxial tensility lifts up the band with a small in-plane hole effective mass to the valence top.
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Research Products
(35 results)
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[Journal Article] Lattice distortion of porous Si by Li absorption using two-dimensional photoelectron diffraction2014
Author(s)
E. S. A. Nouh, S. N. Takeda, F. Matsui, K. Hattori, T. Sakata, N. Maejima, H. Matsui, H. Matsuda, T. Matsushita, L. Tóth, M. Morita, S. Kitagawa, R. Ishii, M. Fujita, K. Yasuda, and H. Daimon
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Journal Title
Journal of Materials Science
Volume: 49
Pages: 35-42
DOI
Peer Reviewed
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[Presentation] Electronic structure on Pb-adsorbed Ge(001)2014
Author(s)
T. Sakata, S. N. Takeda, A. K. R. Ang, K. Kitagawa, H. Kumeda, K. Kokui, H. Nakao, K. Takeuchi, H. Momono, K. Maeda, H. Daimon
Organizer
Symposium on Surface and Nano Science 2014
Place of Presentation
新富良野プリンスホテル、北海道富良野市
Year and Date
2014-01-16
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[Presentation] 歪み量測定用UHVラマン装置の構築2013
Author(s)
久米田晴香,武田さくら,坂田智裕,北川幸祐,小久井一樹,竹内克行,中尾敏臣,前田昂平,桃野浩樹,大門寛
Organizer
2013年真空・表面科学合同講演会
Place of Presentation
つくば国際会議場、つくば市
Year and Date
2013-11-27
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[Presentation] 歪み印加マニピュレータの開発2013
Author(s)
武田さくら,坂田智裕,山谷寛,Nur Idayu Ayob,北川幸祐,小久井一樹,久米田晴香,谷川洋平,大門寛
Organizer
日本物理学会第68回年次大会
Place of Presentation
広島大学、東広島市
Year and Date
2013-03-28
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[Presentation] ARPES measurement of valence band structure in strained silicon2012
Author(s)
S. N. Takeda, H. Tabata, T. Sakata, N. I. Ayob, N. Maejima, H. Matsuoka, H. Daimon, T. Inaoka, T. Tezuka, T. Katayama, and M. Yoshimaru
Organizer
12th International Conference on Electron Spectroscopy and Structure (ICESS-12)
Place of Presentation
Saint Malo, France
Year and Date
2012-09-20
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[Presentation] Effect of biaxial tensile strain on silicon valence band dispersion2012
Author(s)
S. N. Takeda, H. Tabata, T. Sakata, N. I. Ayob, N. Maejima, H. Matsuoka, T. Inaoka, K. Arima, T. Tezuka, T. Katayama, M. Yoshimaru, T. Imamura, and H. Daimon
Organizer
31st International Conference on the Physics of Semiconductors (ICPS 2012)
Place of Presentation
Zurich, Switzerland
Year and Date
2012-08-02
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