2013 Fiscal Year Final Research Report
Investigation of SiGe/Si hetero interface to provide a device for producing multi-valued signals using light-induced current modulation
| Project/Area Number |
22560339
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Hokkaido Institute of Technology |
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Principal Investigator |
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| Project Period (FY) |
2010-04-01 – 2014-03-31
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| Keywords | シリコン・ゲルマニウム / SOI / 電界効果素子 / バックゲート / 正孔電流 / 実効移動度 |
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| Research Abstract |
A device for producing multi-valued signals using light-induced current modulation was investigated. The device structure consisted of a light-receiving part for generating holes by laser irradiation and a p-type MOSFET for detecting hole current. The light-receiving part was made by SiGe quantum wells on SOI substrate. The relationship between Si barrier layer thickness and quantum energy level was obtained by the computer simulation and the simulated data was applied to design the light-receiving part structure. The MOSFET with buried SiGe quantum well channel was formed by using the buried silicon oxide of SOI substrate as the gate oxide. The device characteristics of MOSFET showed that the device was useful as the MOSFET for detecting and amplifying hole current.
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