2012 Fiscal Year Final Research Report
Development of self-cooling device using high conductivity and high thermopower thermoelectric materials
| Project/Area Number |
22560691
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Structural/Functional materials
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| Research Institution | Yokohama National University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
OKAMOTO Yoichi 防衛大学校, 電気情報学群, 准教授 (10546063)
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| Co-Investigator(Renkei-kenkyūsha) |
YAMAGUCHI Satarou 中部大学, 超電導・持続可能エネルギー研究センター, 教授 (10249964)
KAWAHARA Toshio 中部大学, 超電導・持続可能エネルギー研究センター, 教授 (80437350)
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| Project Period (FY) |
2010 – 2012
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| Keywords | 熱 / エネルギー材料 |
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| Research Abstract |
The self-cooling device has been developed by combining the commercial n-channel power MOSFET and single-crystalline Sb doped n-type and/or B doped p-type silicon wafers in order to improve heat removal or cooling. We find for the first time that the average temperature of the upper side on the power MOSFET with the n-type silicon wafer is cooled down about 2℃, in which the electric current of 40A flows from lower to upper direction of the self-cooling device. This certainly warrants future work on the improvement of the measurement condition.
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