2011 Fiscal Year Final Research Report
Characterization for the atomic structures and electric structures on the GaN substrates during device fabrication process
| Project/Area Number |
22656038
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Single-year Grants |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Osaka University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
HATTORI Azusa 大阪大学, 産業科学研究所, 助教 (80464238)
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| Project Period (FY) |
2010 – 2011
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| Keywords | 窒化ガリウム / 表面科学 / 表面原子構造 / プロセス表面 / 結晶欠陥 |
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| Research Abstract |
Based on the systematically investigation, the surface cleaning method for GaN substrate surface has been developed. Clean and atomically flat GaN(0001) surface was successfully formed by the combination of wet etching and annealing in ultra-high vacuum, which should be general cleaning method for GaN. By removing the native oxide and damaged layer, which would be the centers for non-irradiation states, about 120 times intense band-to-band peak intensity was achieved.
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